Electric field driven solid state reactions—reaction kinetics and the influence of grain boundaries on the interface morphology in the system MgO/MgIn2O4/In2O3

2005 ◽  
Vol 7 (2) ◽  
pp. 413-420 ◽  
Author(s):  
C. Korte ◽  
B. Franz ◽  
D. Hesse
Keyword(s):  
Solid State ◽  
Electric Field ◽  
Grain Boundaries ◽  
Reaction Kinetics ◽  
Solid State Reactions ◽  
Interface Morphology

solid-state reactions in the presence of an electric field

1997 ◽  
Vol 3 (S2) ◽  
pp. 623-624
Author(s):  
Matthew T. Johnson ◽  
C.Barry Carter
Keyword(s):  
Solid State ◽  
Electric Field ◽  
Elevated Temperatures ◽  
Reaction Rates ◽  
Laser Deposition ◽  
Solid State Reactions ◽  
Interfacial Stability ◽  
Interface Morphology ◽  
Charged Species ◽  
Microscopy Techniques

It is well known that diffusion in ionic materials occurs primarily by the movement of charged species. Therefore, an electric field should provide a very powerful driving force for mass transport. In the present study, solid-state reactions, in the presence of an electric field, have been carried out between thin films of In2O3 and bulk monocrystalline MgO ﹛001﹜. In solid-state reactions of this type, reaction rates and interfacial stability are affected by the transport properties of the reacting ions. by applying an electric field across the sample, at elevated temperatures, the reaction rates and interfaces are affected as a result of ionic conductivity. Through the use of electron microscopy techniques the reaction kinetics and interface morphology have been investigated, in this spinel forming system, to gain a better understanding of the influence of an electric field on interface morphology and solid-state reactions.The reaction couples used in this study were produced by means of pulsed-laser deposition (PLD).

Electric-Field Effects on Reactions Between Oxides

1997 ◽  
Vol 481 ◽  
Author(s):  
Matthew T. Johnson ◽  
Shelley R. Gilliss ◽  
C. Barry Carter
Keyword(s):  
Solid State ◽  
Electric Field ◽  
Elevated Temperatures ◽  
Ionic Current ◽  
Reaction Rates ◽  
Solid State Reactions ◽  
Interfacial Stability ◽  
Electric Field Effects ◽  
Thin Film Diffusion ◽  
Microscopy Techniques

ABSTRACTThin films of In2O3 and Fe2O3 have been deposited on (001) MgO using pulsed-laser deposition (PLD). These thin-film diffusion couples were then reacted in an applied electric field at elevated temperatures. In this type of solid-state reaction, both the reaction rate and the interfacial stability are affected by the transport properties of the reacting ions. The electric field provides a very large external driving force that influences the diffusion of the cations in the constitutive layers. This induced ionic current causes changes in the reaction rates, interfacial stability and distribution of the phases. Through the use of electron microscopy techniques the reaction kinetics and interface morphology have been investigated in these spinel-forming systems, to gain a better understanding of the influence of an electric field on solid-state reactions.

Chemical kinetics at solid-solid interfaces

2000 ◽  
Vol 72 (11) ◽  
pp. 2137-2147 ◽  
Author(s):  
Hermann Schmalzried
Keyword(s):  
Solid State ◽  
Moving Boundaries ◽  
Heterogeneous Reactions ◽  
Solid State Reactions ◽  
Nonlinear Phenomena ◽  
Two Dimensional ◽  
Interface Morphology ◽  
Interface Kinetics ◽  
Reaction Media ◽  
Kinetics Of

The kinetics of solid-solid interfaces controls in part the course of heterogeneous reactions in the solid state, in particular in miniaturized systems. In this paper, the essential situations of interface kinetics in solids are defined, and the basic formal considerations are summarized. In addition to the role interfaces play as resistances for transport across them, they offer high diffusivity paths laterally and thus represent two-dimensional reaction media. Experimental examples will illustrate the kinetic phenomena at static and moving boundaries, including problems such as exchange fluxes, boundary-controlled solid-state reactions, interface morphology, nonlinear phenomena connected with interfaces, and reactions in and at boundaries, among others.

Use of Pt Markers in the Study of Solid-State Reactions in the Presence of an Electric Field

1998 ◽  
Vol 4 (2) ◽  
pp. 158-163 ◽  
Author(s):  
Matthew T. Johnson ◽  
Shelley R. Gilliss ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Electric Field ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Solid State Reactions ◽  
Single Crystal Substrate ◽  
Fine Scale ◽  
Initial Location ◽  
Crystal Substrate

The use of Pt to mark the initial location of heterophase boundaries in solid-state reactions was extended to investigate the motion of interfaces during a thin-film solid-state reaction between In2O3 and MgO in the presence of an electric field. The Pt markers were prepared by sputtering a thin Pt film onto a single-crystal substrate. The resulting multilayer was then heated prior to thin-film deposition to de-wet the Pt film and thus form an array of small, isolated particles. These particles serve as fine-scale markers for tracking the motion of interfaces. However, there are certain situations in which the markers can move with the interface.

White Beam Synchrotron Topographic Studies of the Effects of Localized Stress Fields on the Kinetics of Single Crystal Solid State Reactions.

1988 ◽  
Vol 143 ◽  
Author(s):  
Michael Dudley
Keyword(s):  
Solid State ◽  
Reaction Kinetics ◽  
Local Reaction ◽  
Stress Fields ◽  
Solid State Reactions ◽  
Thermally Induced ◽  
White Beam ◽  
Kinetics Of ◽  
Good Agreement

AbstractWhite Beam Synchrotron Topography has been used to determine the role of localized stress fields in the solid state polymerization of single crystals of the diacetylene PTS. Results indicate that the stress fields due to grown in dislocations can accelerate local reaction kinetics in thermally induced polymerization reactions, although no such effects were previously observable in photolytically or radiolytically induced reactions. Results are analyzed in an analogous fashion to the treatment of the nucleation of solid state phase transformations at dislocations. Good agreement was found between approximate theoretical treatments and experimental observation. The response of the monomer crystal to the inhomogeneous stresses generated as a result of inhomogeneous reaction and the implications regarding local reaction kinetics are discussed in detail.

Interfaces in high-Tc superconducting oxides

1989 ◽  
Vol 47 ◽  
pp. 178-179
Author(s):  
C. Barry Carter ◽  
Lisa A. Tietz
Keyword(s):  
Solid State ◽  
Grain Boundaries ◽  
Superconducting Phase ◽  
Solid State Reactions ◽  
High Angle ◽  
Phase Boundaries ◽  
High Tc ◽  
Superconducting Material ◽  
First Case ◽  
Superconducting Oxides

Interfaces in high-Tc superconducting oxides are influential during both the processing of bulk materials and the growth of thin epitactically aligned layers. In the first case, the formation of the superconducting phase involves the movement of phase boundaries during the solid-state reaction, while in the second, the phase boundary is formed as the superconducting material grows on the single-crystal substrate. Having formed the superconducting material, the superconducting phase will, in general, contain a large number of grain boundaries varying from the simple twin boundaries which can be produced during the cubic-to-tetragonal transformation, to low-angle grain boundaries, special high-angle grain boundaries, other high-angle grain boundaries and phase boundaries due to incomplete or on-going solid-state reactions. During the course of this presentation, recent results on these topics will be reviewed, paying particular attention to the more widely studied material, YBa2Cu3O6+x.The importance of grain boundaries in high-Tc superconducting oxides has been firmly established by the systematic analysis of Dimos et al who have shown that the misorientation of the grains in layers of YBa2Cu3O6+x which had been grown on polycrystalline SrTiO3 substrate varies with the relative misorientation between the grains.

Microstructural Variations in Melt-Spun Rapidly Solidified Ribbons

1985 ◽  
Vol 43 ◽  
pp. 54-55
Author(s):  
L. A. Bendersky ◽  
W. J. Boettinger
Keyword(s):  
Solid State ◽  
Processing Parameters ◽  
Heat Extraction ◽  
Solid State Reactions ◽  
Careful Examination ◽  
Ion Milling ◽  
Melt Spun ◽  
Wheel Side ◽  
Rapidly Solidified ◽  
Heat Extraction Rate

Rapid solidification produces a wide variety of sub-micron scale microstructure. Generally, the microstructure depends on the imposed melt undercooling and heat extraction rate. The microstructure can vary strongly not only due to processing parameters changes but also during the process itself, as a result of recalescence. Hence, careful examination of different locations in rapidly solidified products should be performed. Additionally, post-solidification solid-state reactions can alter the microstructure.The objective of the present work is to demonstrate the strong microstructural changes in different regions of melt-spun ribbon for three different alloys. The locations of the analyzed structures were near the wheel side (W) and near the center (C) of the ribbons. The TEM specimens were prepared by selective electropolishing or ion milling.

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