Vapor phase pH induced fluorescence switching of a dimethylaminostyryl terpyridine derivative in thin films

2012 ◽  
Vol 36 (1) ◽  
pp. 52-55 ◽  
Author(s):  
Srivathsa Vaidya ◽  
Russell H. Schmehl
Author(s):  
Massimiliano Cavallini ◽  
Ilse Manet ◽  
Marco Brucale ◽  
Laura Favaretto ◽  
Manuela Melucci ◽  
...  

Here, we applied rubbing on thiophene derivate organic semiconductor thin films to induce a reversible mechanical amorphisation. Amorphisation is associated with fluorescence switching, which is regulated by the polymorphic nature...


2019 ◽  
Vol 28 (4) ◽  
pp. 717-723 ◽  
Author(s):  
S. Guillemin ◽  
P. Mumbauer ◽  
H. Radtke ◽  
M. Fimberger ◽  
S. Fink ◽  
...  

2014 ◽  
Vol 115 (11) ◽  
pp. 113508 ◽  
Author(s):  
Stéphane Brochen ◽  
Matthieu Lafossas ◽  
Ivan-Christophe Robin ◽  
Pierre Ferret ◽  
Frédérique Gemain ◽  
...  

2017 ◽  
Vol 8 ◽  
pp. 723-735 ◽  
Author(s):  
Priya Moni ◽  
Ahmed Al-Obeidi ◽  
Karen K Gleason

Vapor phase syntheses, including parylene chemical vapor deposition (CVD) and initiated CVD, enable the deposition of conformal polymer thin films to benefit a diverse array of applications. This short review for nanotechnologists, including those new to vapor deposition methods, covers the basic theory in designing a conformal polymer film vapor deposition, sample preparation and imaging techniques to assess film conformality, and several applications that have benefited from vapor deposited, conformal polymer thin films.


2011 ◽  
Vol 254 ◽  
pp. 50-53 ◽  
Author(s):  
Tatsuya Ishii ◽  
Hideyuki Homma ◽  
Shigeo Yamaguchi

We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.


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