Structural and compositional properties of Er-doped silicon nanoclusters/oxides for multilayered photonic devices studied by STEM-EELS

Nanoscale ◽  
2013 ◽  
Vol 5 (20) ◽  
pp. 9963 ◽  
Author(s):  
Alberto Eljarrat ◽  
Lluís López-Conesa ◽  
José Manuel Rebled ◽  
Yonder Berencén ◽  
Joan Manel Ramírez ◽  
...  
1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.


2004 ◽  
Vol 21 (7) ◽  
pp. 1333-1336 ◽  
Author(s):  
Zhang Chang-Sheng ◽  
Xiao Hai-Bo ◽  
Chen Zhi-Jun ◽  
Cheng Xin-Li ◽  
Zhang Feng

2004 ◽  
Vol 43 (4A) ◽  
pp. 1541-1544 ◽  
Author(s):  
Jeong Sook Ha ◽  
Young Rae Jang ◽  
Keon Ho Yoo ◽  
Chang Hyun Bae ◽  
Sang Hwan Nam ◽  
...  

2007 ◽  
Vol 91 (9) ◽  
pp. 093133 ◽  
Author(s):  
C. T. Huang ◽  
C. L. Hsin ◽  
K. W. Huang ◽  
C. Y. Lee ◽  
P. H. Yeh ◽  
...  

2009 ◽  
Vol 129 (7) ◽  
pp. 696-703 ◽  
Author(s):  
Carlos Rozo ◽  
Luis F. Fonseca ◽  
Daniel Jaque ◽  
José García Solé

2008 ◽  
Author(s):  
Jee Soo Chang ◽  
Myung-Ki Kim ◽  
Yong-Hee Lee ◽  
Jung H. Shin ◽  
Gun Yong Sung

2019 ◽  
Vol 54 (19) ◽  
pp. 12668-12675 ◽  
Author(s):  
Yuhan Gao ◽  
Qianyu Fu ◽  
Hao Shen ◽  
Dongsheng Li ◽  
Deren Yang

Nanophotonics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 2557-2567 ◽  
Author(s):  
Huanian Zhang ◽  
Pengfei Ma ◽  
Mingxiao Zhu ◽  
Wenfei Zhang ◽  
Guomei Wang ◽  
...  

AbstractAir-stable broadband saturable absorbers (SAs) exhibit a promising application potential, and their preparations are also full of challenges. Palladium selenide (PdSe2), as a novel two-dimensional (2D) layered material, exhibits competitive optical properties including wide tunable bandgap, unique pentagonal atomic structure, excellent air stability, and so on, which are significant in designing air-stable broadband SAs. In our work, theoretical calculation of the electronic band structures and bandgap characteristics of PdSe2 are studied first. Additionally, PdSe2 nanosheets are synthesized and used for designing broadband SAs. Based on the PdSe2 SA, ultrafast mode-locked operations in 1- and 1.5-μm spectral regions are generated successfully. For the mode-locked Er-doped operations, the central wavelength, pulse width, and pulse repetition rate are 1561.77 nm, 323.7 fs, and 20.37 MHz, respectively. Meanwhile, in all normal dispersion regions, mode-locked Yb-doped fiber laser with 767.7-ps pulse width and 15.6-mW maximum average output power is also generated successfully. Our results fully reveal the capacity of PdSe2 as a broadband SA and provide new opportunities for designing air-stable broadband ultra-fast photonic devices.


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