Facile room temperature methods for growing ultra thin films of graphene nanosheets, nanoparticulate tin oxide and preliminary assessment of graphene–tin oxide stacked layered composite structure for supercapacitor application

RSC Advances ◽  
2014 ◽  
Vol 4 (8) ◽  
pp. 4094-4104 ◽  
Author(s):  
Sagar Patil ◽  
Virendra Patil ◽  
Shivaram Sathaye ◽  
Kashinath Patil
2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L546-L548 ◽  
Author(s):  
Yu Wang ◽  
Wan Ping Chen ◽  
Kei Chun Cheng ◽  
Helen Lai Wah Chan ◽  
Chung Loong Choy

2002 ◽  
Vol 415 (1-2) ◽  
pp. 272-275 ◽  
Author(s):  
J Tashiro ◽  
A Sasaki ◽  
S Akiba ◽  
S Satoh ◽  
T Watanabe ◽  
...  

2003 ◽  
Vol 18 (2) ◽  
pp. 442-447 ◽  
Author(s):  
Karola Thiele ◽  
Sibylle Sievers ◽  
Christian Jooss ◽  
Jörg Hoffmann ◽  
Herbert C. Freyhardt

Biaxially aligned indium tin oxide (ITO) thin films were prepared by an ion-beamassisted deposition (IBAD) process at room temperature. Films with a transmittance at 550 nm of 90% and an electrical resistivity of 1.1 × 10−3 Ωcm for 300 and 250 nm thickness were obtained. Investigations of the texture evolution during IBAD film growth were carried out and compared to the well-established texture development in yttria-stabilized zirconia. An in-plane texture of 12.6° full width at half-maximum (FWHM) for a 1-μm-thick IBAD-ITO film was achieved. The quality of these films as electrically conductive buffer layers for YBa2Cu3O7-δ (YBCO) high-temperature superconductors was demonstrated by the subsequent deposition of high-currentcarrying YBCO films by thermal co-evaporation using a 3–5-nm-thick Y2O3 interlayer.A Jc of 0.76 MA/cm2 (77K, 0 T) was obtained for a 1 × 1 cm sample with ITO of 20° FWHM.


2015 ◽  
Vol 11 (2) ◽  
pp. 253-260 ◽  
Author(s):  
Ketan Gattu ◽  
Kalyani Ghule ◽  
Anil Kashale ◽  
R.S. Mane ◽  
Ramphal Sharma ◽  
...  

2017 ◽  
Vol 43 (6) ◽  
pp. 531-534 ◽  
Author(s):  
O. S. Mahdi ◽  
I. V. Malyar ◽  
V. V. Galushka ◽  
A. V. Smirnov ◽  
I. V. Sinev ◽  
...  

2008 ◽  
Vol 55-57 ◽  
pp. 769-772 ◽  
Author(s):  
I Srithanachai ◽  
K. Nutaman ◽  
A. Rerkratn ◽  
S. Niemcharoen ◽  
S. Supadech

This paper descript studying and preparation indium-tin oxide (ITO) thin film from method 90 wt.% In2O3 and 10 wt.% SnO2 formula target with 99.99% purity on glass slide by RF reactive sputtering method at room temperature. This paper, sputtering time 5, 15, 30 and 60 mins. Thin films ITO were measured crystallization, optical and electrical characteristic by an X-ray diffractometer (XRD), scan electron microscopy (SEM) , Four Point Probe and UV-VIS spectrophotometry. The results found that thin films which made from RF sputtering method had a high crystallization, order arrangement grain. Strong peak of XRD (400) and (441), low resistivity are 2.2 x 10-3, 4.4 x 10-3, 1 x 10-3 and 7 x 10-4 Ω-cm, transmittance are 82%, 84%, 87% and 89%, respectively. The overall experimental results identify that fabricated thin films ITO have good properties and is suitable for transparent electrode application. The ultimate goal is developing schottky photodetector.


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