scholarly journals Highly Efficient and Scalable Separation of Semiconducting Carbon Nanotubes via Weak Field Centrifugation

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Wieland G. Reis ◽  
R. Thomas Weitz ◽  
Michel Kettner ◽  
Alexander Kraus ◽  
Matthias Georg Schwab ◽  
...  

Abstract The identification of scalable processes that transfer random mixtures of single-walled carbon nanotubes (SWCNTs) into fractions featuring a high content of semiconducting species is crucial for future application of SWCNTs in high-performance electronics. Herein we demonstrate a highly efficient and simple separation method that relies on selective interactions between tailor-made amphiphilic polymers and semiconducting SWCNTs in the presence of low viscosity separation media. High purity individualized semiconducting SWCNTs or even self-organized semiconducting sheets are separated from an as-produced SWCNT dispersion via a single weak field centrifugation run. Absorption and Raman spectroscopy are applied to verify the high purity of the obtained SWCNTs. Furthermore SWCNT - network field-effect transistors were fabricated, which exhibit high ON/OFF ratios (105) and field-effect mobilities (17 cm2/Vs). In addition to demonstrating the feasibility of high purity separation by a novel low complexity process, our method can be readily transferred to large scale production.

2021 ◽  
pp. 2107119
Author(s):  
Yahui Li ◽  
Miaomiao Zheng ◽  
Jian Yao ◽  
Wenbin Gong ◽  
Yijun Li ◽  
...  

2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева

В статье рассмотрены основные типы CNTFET транзисторов, изготовленных на углеродных нанотрубках. Представлена классификация, особенности конструкции и основные этапы технологии изготовления CNTFET транзисторов. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. The article considers the main types of CNTFET transistors made on carbon nanotubes. The classification, design features and the main stages of the CNTFET transistor manufacturing technology are presented. Carbon nanotube field effect transistors (CNTFET) are promising nanoscale devices for implementing high-performance circuits with very dense and low power.


2014 ◽  
Vol 16 (22) ◽  
pp. 10861-10865 ◽  
Author(s):  
Jia Gao ◽  
Yueh-Lin Loo

Presorted, semiconducting carbon nanotubes in the channels of field-effect transistors undergo simultaneous p-doping and oxidation during ozone exposure.


2010 ◽  
Vol 21 (34) ◽  
pp. 345301 ◽  
Author(s):  
Sung Myung ◽  
Sungjong Woo ◽  
Jiwoon Im ◽  
Hyungwoo Lee ◽  
Yo-Sep Min ◽  
...  

2003 ◽  
Vol 378 (1-2) ◽  
pp. 9-17 ◽  
Author(s):  
E. Couteau ◽  
K. Hernadi ◽  
J.W. Seo ◽  
L. Thiên-Nga ◽  
Cs. Mikó ◽  
...  

2008 ◽  
Author(s):  
Y. Ohno ◽  
D. Phokharatkul ◽  
H. Nakano ◽  
S. Kishimoto ◽  
T. Mizutani

ACS Nano ◽  
2011 ◽  
Vol 5 (4) ◽  
pp. 3400-3400
Author(s):  
Huiliang Wang ◽  
Jun Luo ◽  
Alex Robertson ◽  
Yasuhiro Ito ◽  
Wenjing Yan ◽  
...  

Nanomaterials ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 33
Author(s):  
Sangheon Jeon ◽  
Pyunghwa Han ◽  
Jeonghwa Jeong ◽  
Wan Sik Hwang ◽  
Suck Won Hong

Graphene nanoribbons are a greatly intriguing form of nanomaterials owing to their unique properties that overcome the limitations associated with a zero bandgap of two-dimensional graphene at room temperature. Thus, the fabrication of graphene nanoribbons has garnered much attention for building high-performance field-effect transistors. Consequently, various methodologies reported previously have brought significant progress in the development of highly ordered graphene nanoribbons. Nonetheless, easy control in spatial arrangement and alignment of graphene nanoribbons on a large scale is still limited. In this study, we explored a facile, yet effective method for the fabrication of graphene nanoribbons by employing orientationally controlled electrospun polymeric nanowire etch-mask. We started with a thermal chemical vapor deposition process to prepare graphene monolayer, which was conveniently transferred onto a receiving substrate for electrospun polymer nanowires. The polymeric nanowires act as a robust etching barrier underlying graphene sheets to harvest arrays of the graphene nanoribbons. On varying the parametric control in the process, the size, morphology, and width of electrospun polymer nanowires were easily manipulated. Upon O2 plasma etching, highly aligned arrays of graphene nanoribbons were produced, and the sacrificial polymeric nanowires were completely removed. The graphene nanoribbons were used to implement field-effect transistors in a bottom-gated configuration. Such approaches could realistically yield a relatively improved current on–off ratio of ~30 higher than those associated with the usual micro-ribbon strategy, with the clear potential to realize reproducible high-performance devices.


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