Strong temperature-dependent crystallization, phase transition, optical and electrical characteristics of p-type CuAlO2 thin films

Phase-pure p-type rhombohedral CuAlO2 thin films were successfully prepared by reactive magnetron sputtering with a single-step process (without post-annealing).

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Preferential Orientation of Photochromic Gadolinium Oxyhydrides

10.26434/chemrxiv.12377690.v1 ◽

2020 ◽

Author(s):

Elbruz Murat Baba ◽

Jose Montero ◽

Dmitrii Moldarev ◽

Marcos V. Moro ◽

Max Wolff ◽

...

Keyword(s):

Thin Films ◽

Grain Size ◽

Rare Earth ◽

Preferential Orientation ◽

Reactive Magnetron ◽

Flow Ratio ◽

Deposition Pressure ◽

Step Process ◽

Oxidation In Air ◽

Key Parameter

We report preferential orientation control in photochromic gadolinium oxyhydride (GdHO) thin films deposited by a two-step process. Gadolinium hydride (GdH2-x) films were grown by reactive magnetron sputtering, followed by oxidation in air. The preferential orientation, grain size, anion concentrations, and photochromic response of the films are strongly dependent on the deposition pressure. GdHO films show preferential orientation along the [100] direction and exhibit photochromism when synthesized at deposition pressures up to 5.8 Pa and. The photochromic contrast is larger than 20 % when the films are deposited below 2.8 Pa with 0.22 H2/Ar flow ratio. We argue that the degree of preferential orientation defines the oxygen concentration which is known to be a key parameter for photochromism in rare-earth oxyhydride thin films. The experimental observations described above are explained by the oxidation-induced decrease of the grain size as a result of the increase of the deposition pressure of the sputtering gas.

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On the Temperature Dependence of Resistivity of Polycrystalline Silicon Films

MRS Proceedings ◽

10.1557/proc-106-77 ◽

1987 ◽

Vol 106 ◽

Cited By ~ 3

Author(s):

Mark S. Rodder ◽

Dimitri A. Antoniadis

Keyword(s):

Numerical Calculation ◽

Polycrystalline Silicon ◽

Amorphous Region ◽

Defect States ◽

Temperature Dependent ◽

Step Process ◽

Dependent Potential ◽

Si Films ◽

Polycrystalline Silicon Films ◽

P Type

ABSTRACTIt is shown that the grain boundary (GB) in polycrystalline-silicon (poly-Si) films need not be modeled as a temperature-dependent potential barrier or as an amorphous region to explain the temperature (T) dependence of resistivity (ρ) in p-type poly-Si films at low T. Specifically, we consider that QB defect states allow for the tunneling component of current to occur by a two-step process. Incorporation of the two-step process in a numerical calculation of ρ vs. T results in excellent agreement with available data from 100 K to 300 K.

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Fabrication of low-resistive p-type Al–N co-doped zinc oxide thin films by RF reactive magnetron sputtering

Physica B Condensed Matter ◽

10.1016/j.physb.2009.08.170 ◽

2009 ◽

Vol 404 (23-24) ◽

pp. 4846-4849 ◽

Cited By ~ 16

Author(s):

Hsin-Chun Lu ◽

Jo-Ling Lu ◽

Chi-You Lai ◽

Gwo-Mei Wu

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Magnetron Sputtering ◽

Reactive Magnetron Sputtering ◽

Reactive Magnetron ◽

Oxide Thin Films ◽

P Type ◽

Co Doped

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Highly Doped P-Type, N-Type CdS Thin Films and Diodes

MRS Proceedings ◽

10.1557/proc-329-173 ◽

1993 ◽

Vol 329 ◽

Author(s):

Wen P. Shen ◽

Hoi S. Kwok

Keyword(s):

Thin Films ◽

Doping Concentration ◽

Annealing Process ◽

Laser Deposition ◽

Post Annealing ◽

Gaas Substrates ◽

Cds Thin Film ◽

Good Crystalline Quality ◽

Cds Thin Films ◽

P Type

AbstractCdS thin films with doping concentration as high as 1017 cm-3 for p-type or 1021 cm-3 for n-type were achieved by pulsed excimer laser deposition without any post-annealing process. These films were grown on InP or GaAs substrates with good crystalline quality. By using this technique, CdS thin film p-n junctions were produced successfully.

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Post-annealing-temperature-dependent Magnetic Anisotropy of CoFe$_2$O$_4$ Thin Films

New Physics Sae Mulli ◽

10.3938/npsm.63.1328 ◽

2013 ◽

Vol 63 (12) ◽

pp. 1328-1332

Author(s):

D. Y. Lee ◽

C. -W. Cho ◽

S. H. Lee ◽

J. W. Kim ◽

H. K. Kim ◽

...

Keyword(s):

Thin Films ◽

Magnetic Anisotropy ◽

Annealing Temperature ◽

Temperature Dependent ◽

Post Annealing ◽

Post Annealing Temperature

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Thermochromic VO2 Thin Film Prepared by Post Annealing Treatment of V2O5 Thin Film

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.79-82.747 ◽

2009 ◽

Vol 79-82 ◽

pp. 747-750 ◽

Cited By ~ 12

Author(s):

Dong Qing Liu ◽

Wen Wei Zheng ◽

Hai Feng Cheng ◽

Hai Tao Liu

Keyword(s):

Thin Film ◽

Thin Films ◽

Phase Transition ◽

Photoelectron Spectroscopy ◽

Sol Gel ◽

Annealing Treatment ◽

Simple Method ◽

X Ray ◽

Post Annealing ◽

Vo2 Thin Films

Thermochromic vanadium dioxide (VO2) exhibits a semi-conducting to metallic phase transition at about 68°C, involving strong variations in electrical and optical properties. A simple method was proposed to prepare VO2 thin films from easily gained V2O5 thin films. The detailed thermodynamic calculation was done and the results show that V2O5 will decompose to VO2 when the post annealing temperature reaches 550°C at the atmospheric pressure of less than 0.06Pa. The initial V2O5 films were prepared by sol-gel method on fused-quartz substrates. Different post annealing conditions were studied. The derived VO2 thin film samples were characterized using X-ray diffraction and X-ray photoelectron spectroscopy. The electrical resistance and infrared emissivity of VO2 thin films under different temperatures were measured. The results show that the VO2 thin film derived from the V2O5 thin film annealed at 550°C for 10 hours is pure dioxide of vanadium without other valences. It was observed that the resistance of VO2 thin film with thickness about 600nm can change by 4 orders of magnitude and the 7.5-14μm emissivity can change by 0.6 during the phase transition.

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