Construction of carbon-based two-dimensional crystalline nanostructure by chemical vapor deposition of benzene on Cu(111)

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

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Homoepitaxy of Ge on ozone-treated Ge (1 0 0) substrate by ultra-high vacuum chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2018.11.003 ◽

2019 ◽

Vol 507 ◽

pp. 113-117 ◽

Cited By ~ 2

Author(s):

Jiaqi Wang ◽

Limeng Shen ◽

Guangyang Lin ◽

Jianyuan Wang ◽

Jianfang Xu ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

High Vacuum ◽

Chemical Vapor ◽

Ultra High Vacuum

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Thermal-annealing dependence of C-related atomic configuration in Si1−x−yGexCy crystals grown by ultra-high-vacuum chemical-vapor deposition

Applied Physics Letters ◽

10.1063/1.1367294 ◽

2001 ◽

Vol 78 (17) ◽

pp. 2515-2517 ◽

Cited By ~ 5

Author(s):

Y. Kanzawa ◽

T. Saitoh ◽

M. Kubo

Keyword(s):

Chemical Vapor Deposition ◽

Thermal Annealing ◽

Vapor Deposition ◽

High Vacuum ◽

Chemical Vapor ◽

Ultra High Vacuum ◽

Atomic Configuration

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P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si1-xGex Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l1099 ◽

1999 ◽

Vol 38 (Part 2, No. 10A) ◽

pp. L1099-L1101 ◽

Cited By ~ 4

Author(s):

Kun-Ming Chen ◽

Hsiang-Jen Huang ◽

Guo-Wei Huang ◽

Chun-Yen Chang ◽

Liang-Po Chen

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

High Vacuum ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Ultra High Vacuum ◽

Oxide Semiconductor

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The Compositional Distribution of Ge Islands Grown by Ultra-High Vacuum Chemical Vapor Deposition

ECS Meeting Abstracts ◽

10.1149/ma2010-02/30/1869 ◽

2010 ◽

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

High Vacuum ◽

Chemical Vapor ◽

Ultra High Vacuum ◽

Compositional Distribution

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Water Desorption from Magnesium Oxide Films Fabricated by Chemical Vapor Deposition

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.11-12.693 ◽

2006 ◽

Vol 11-12 ◽

pp. 693-696 ◽

Cited By ~ 1

Author(s):

S. Kawaguchi ◽

K.C. Namiki ◽

S. Ohshio ◽

Junichi Nishino ◽

H. Saitoh

Keyword(s):

Chemical Vapor Deposition ◽

Magnesium Oxide ◽

Vapor Deposition ◽

High Vacuum ◽

Secondary Electron Emission ◽

Film Surface ◽

Chemical Vapor ◽

Ultra High Vacuum ◽

Water Desorption ◽

Plasma Sputtering

Magnesium oxide (MgO) films are utilized for the anti-plasma sputtering coating with excellent ability of secondary electron emission in plasma display panels (PDP). These properties are degraded by the impurities adsorbed on the film surface. Therefore, we should obtain impurity-free surface during the PDP manufacturing process. We have synthesized whisker and continuous film types of metal oxide using a chemical vapor deposition (CVD) method operated under atmosphere. In this study, a temperature programmed desorption method has been applied to detect residual species adsorbed on the surface of the present films in the ultra-high vacuum atmosphere. The amount of water adsorption was determined by this method.

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