Controllable growth of high-quality metal oxide/conducting polymer hierarchical nanoarrays with outstanding electrochromic properties and solar-heat shielding ability

2014 ◽  
Vol 2 (33) ◽  
pp. 13541-13549 ◽  
Author(s):  
Dongyun Ma ◽  
Guoying Shi ◽  
Hongzhi Wang ◽  
Qinghong Zhang ◽  
Yaogang Li

High-quality metal oxide/conducting polymer hierarchical nanoarrays with excellent electrochromic performances and solar-heat shielding ability are prepared using a powerful solution-based method.

ACS Nano ◽  
2012 ◽  
Vol 6 (6) ◽  
pp. 5531-5538 ◽  
Author(s):  
Xinhui Xia ◽  
Jiangping Tu ◽  
Yongqi Zhang ◽  
Xiuli Wang ◽  
Changdong Gu ◽  
...  

CrystEngComm ◽  
2020 ◽  
Vol 22 (28) ◽  
pp. 4790-4796
Author(s):  
Kaixuan Zhao ◽  
Zhijie Yang ◽  
Huiying Wei ◽  
Jinxin Guo ◽  
Yanzhao Yang ◽  
...  

High quality metal oxides nanocrystals are synthesized from bulk metal oxides in the presence of surfactants and high boiling point solvent.


2018 ◽  
Vol 6 (37) ◽  
pp. 9941-9949 ◽  
Author(s):  
Meng-Huan Jao ◽  
Chien-Chen Cheng ◽  
Chun-Fu Lu ◽  
Kai-Chi Hsiao ◽  
Wei-Fang Su

We develop a universal hydroxide-assisted strategy for the low thermal budget efficient fabrication of high quality metal oxide thin films.


2022 ◽  
Vol 236 ◽  
pp. 111511
Author(s):  
Yuxiang Wang ◽  
Yue Liu ◽  
Junye Tong ◽  
Xinan Shi ◽  
Lijian Huang ◽  
...  

2020 ◽  
pp. 2-11
Author(s):  
N. V. TITOV ◽  
◽  
A. V. KOLOMEYCHENKO ◽  
V. L. BASINYUK ◽  
I. N. KRAVCHENKO ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.


CrystEngComm ◽  
2018 ◽  
Vol 20 (35) ◽  
pp. 5269-5274 ◽  
Author(s):  
Chao Fan ◽  
Xing Xu ◽  
Yushuang Zhang ◽  
Tianren Chen ◽  
Songyang Wang ◽  
...  

Controllable growth of high-quality PbSe wires with strong mid-infrared emission was achieved with significant suppression of the vapor–solid-grown cubes.


Sign in / Sign up

Export Citation Format

Share Document