Exploring the influence of electron beam irradiation on the morphology, physico-mechanical, thermal behaviour and performance properties of EVA and TPU blends

RSC Advances ◽  
2015 ◽  
Vol 5 (52) ◽  
pp. 41563-41575 ◽  
Author(s):  
Joyeeta Dutta ◽  
Tuhin Chatterjee ◽  
Gopal Dhara ◽  
Kinsuk Naskar
Keyword(s):  
Electron Beam ◽  
Thermal Behaviour ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Performance Properties ◽  
And Performance

Investigation of electron beam irradiated EVA/TPU blends leads to significant improvements in performance properties suitable for various technological applications.

Enhanced stability and performance of few-layer black phosphorus transistors by electron beam irradiation

Nanoscale ◽  
2018 ◽  
Vol 10 (24) ◽  
pp. 11616-11623 ◽  
Author(s):  
Natasha Goyal ◽  
Naveen Kaushik ◽  
Himani Jawa ◽  
Saurabh Lodha
Keyword(s):  
Electron Beam ◽  
Threshold Voltage ◽  
Electron Beam Irradiation ◽  
Black Phosphorus ◽  
Beam Irradiation ◽  
And Performance ◽  
Enhanced Stability

The effect of e-beam irradiation on few layer black phosphorus transistor performance has been studied experimentally in this report. An improvement in device characteristics in terms of better stability, higher on-current, reduced threshold voltage and better mobility is observed post e-beam exposure.

Retracted Article: Insights from investigations of tin dioxide and its composites: electron-beam irradiation, fractal assessment, and mechanism

Nanoscale ◽  
2015 ◽  
Vol 7 (38) ◽  
pp. 15532-15552 ◽  
Author(s):  
Zhiwen Chen ◽  
Chan-Hung Shek ◽  
C. M. Lawrence Wu
Keyword(s):  
Electron Beam ◽  
Performance Evaluation ◽  
Microstructural Evolution ◽  
Electron Beam Irradiation ◽  
Tin Dioxide ◽  
Functional Materials ◽  
Beam Irradiation ◽  
Retracted Article ◽  
And Performance

In this review, we describe the efforts toward understanding the synthetic strategies, microstructural evolution and performance evaluation of tin dioxide (SnO2) functional materials by electron-beam irradiation, fractal assessment, and SnO2 planted graphene.

Curing and performance stability of urethane acrylates with different main chains under electron-beam irradiation

2021 ◽  
Vol 152 ◽  
pp. 106119
Author(s):  
Pengfei Liu ◽  
Fengfen Mao ◽  
Dean C. Webster ◽  
Xiaoya Liu ◽  
Ren Liu
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
And Performance

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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