Enhanced stability and performance of few-layer black phosphorus transistors by electron beam irradiation
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The effect of e-beam irradiation on few layer black phosphorus transistor performance has been studied experimentally in this report. An improvement in device characteristics in terms of better stability, higher on-current, reduced threshold voltage and better mobility is observed post e-beam exposure.
2018 ◽
Vol 20
(14)
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pp. 9038-9044
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1996 ◽
Vol 54
◽
pp. 454-455
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2019 ◽
Vol 139
(10)
◽
pp. 435-436
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