Searching for a fabrication route of efficient Cu2ZnSnS4 solar cells by post-sulfuration of co-sputtered Sn-enriched precursors

2015 ◽  
Vol 3 (37) ◽  
pp. 9650-9656 ◽  
Author(s):  
Ye Feng ◽  
Bing Yu ◽  
Guanming Cheng ◽  
Tszki Lau ◽  
Zhaohui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Annealing Temperature ◽  
Device Performance ◽  
Element Contents

The element contents and the annealing parameters, such as the peak annealing temperature, H2S concentration and the ramping rate, would strongly affect the remaining Sn contents in the Cu2ZnSnS4 thin films and greatly influence the device performance.

scholarly journals Sulfurization of Electrodeposited Sb/Cu Precursors for CuSbS2: Potential Absorber Materials for Thin-Film Solar Cells

2022 ◽  
Vol 8 ◽  
Author(s):  
Aimei Zhao ◽  
Yanping Wang ◽  
Bing Li ◽  
Dongmei Xiang ◽  
Zhuo Peng ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Annealing Temperature ◽  
Thin Film Solar Cells ◽  
Device Performance ◽  
Promising Candidate ◽  
Good Crystallinity ◽  
Effects Of Temperature ◽  
Efficient Solar Cell

CuSbS2, as a direct bandgap semiconductor, is a promising candidate for fabricating flexible thin-film solar cells due to its low grain growth temperature (300°C–450°C). Uniform and highly crystalline CuSbS2 thin films are crucial to improving device performance. However, uniform CuSbS2 is difficult to obtain during electrodeposition and post-sulfurization due to the “dendritic” deposition of Cu on Mo substrates. In this study, Sb/Cu layers were sequentially pulse electrodeposited on Mo substrates. By adjusting the pulse parameters, smooth and uniform Sb layers were prepared on Mo, and a flat Cu layer was obtained on Sb without any dendritic clusters. A two-step annealing process was employed to fabricate CuSbS2 thin films. The effects of temperature on phases and morphologies were investigated. CuSbS2 thin films with good crystallinity were obtained at 360°C. As the annealing temperature increased, the crystallinity of the films decreased. The CuSbS2 phase transformed into a Cu3SbS4 phase with the temperature increase to 400°C. Finally, a 0.90% efficient solar cell was obtained using the CuSbS2 thin films annealed at 360°C.

Effect of Post-Deposition Annealing Process on the Resistive Switching Behaviour of TiO2 Thin Films by Sol-Gel Method

2014 ◽  
Vol 925 ◽  
pp. 125-129 ◽  
Author(s):  
Nur Syahirah Kamarozaman ◽  
Mohd Firdaus Mohamed Soder ◽  
Mohamed Zahidi Musa ◽  
Raudah A. Bakar ◽  
Wan Fazlida Hanim Abdullah ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Annealing Process ◽  
Device Performance ◽  
Post Deposition Annealing ◽  
Post Annealing ◽  
Switching Behaviour ◽  
Post Deposition ◽  
Physical Thickness

The paper presents the memristive behaviour of spin-coated titania thin films on ITO substrate. The sample was annealed in air ambient at different annealing temperature and duration of 250 and 450 °C for 20 and 60 min. The effect of post-annealing process to the physical thickness and crystallinity of the films towards switching behaviour was studied. It was found that the thickness and crystallinity of the films increases as the post annealing process increases. Sample annealed at 250 °C for 20 min with thinner film showed better switching behaviour even though the sample is still in amorphous form. Thus, in our work, we believed that the crystallinity of the films does not affect the switching behaviour of the sample. The reliability of device performance was studied by repeating the measurement for three times.

Relationship between the intermediate phases of the sputtered Zn(O,S) buffer layer and the conduction band offset in Cd-free Cu(In,Ga)Se2 solar cells

CrystEngComm ◽  
2020 ◽  
Vol 22 (26) ◽  
pp. 4416-4426
Author(s):  
Qian Du ◽  
Boyan Li ◽  
Sihan Shi ◽  
Kaizhi Zhang ◽  
Yunxiang Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Buffer Layer ◽  
Conduction Band ◽  
Band Offset ◽  
Device Performance ◽  
Conduction Band Offset ◽  
Intermediate Phases

Intermediate phases are formed in Zn(O,S) thin films with different oxygen fluxes, affecting the device performance.

SOLUTION PROCESSING OF CADMIUM SULFIDE BUFFER LAYER AND ALUMINUM-DOPED ZINC OXIDE WINDOW LAYER FOR THIN FILMS SOLAR CELLS

2014 ◽  
Vol 21 (04) ◽  
pp. 1450059 ◽  
Author(s):  
MAHBOOB ALAM ◽  
MOHAMMAD ISLAM ◽  
AMINE ACHOUR ◽  
ANSAR HAYAT ◽  
BILAL AHSAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Resistivity ◽  
Solar Cells ◽  
Annealing Temperature ◽  
Window Layer ◽  
Zno Thin Films ◽  
Bath Composition ◽  
Film Properties ◽  
Aluminum Doped Zinc Oxide

Cadmium sulfide ( CdS ) and aluminum-doped zinc oxide ( Al : ZnO ) thin films are used as buffer layer and front window layer, respectively, in thin film solar cells. CdS and Al : ZnO thin films were produced using chemical bath deposition (CBD) and sol–gel technique, respectively. For CBD CdS , the effect of bath composition and temperature, dipping time and annealing temperature on film properties was investigated. The CdS films are found to be polycrystalline with metastable cubic crystal structure, dense, crack-free surface morphology and the crystallite size of either few nanometers or 12–17 nm depending on bath composition. In case of CdS films produced with 1:2 ratio of Cd and S precursors, spectrophotometer studies indicate quantum confinement effect, owing to extremely small crystallite size, with an increase in Eg value from 2.42 eV (for bulk CdS ) to ~ 3.76 eV along with a shift in the absorption edge toward ~ 330 nm wavelength. The optimum annealing temperature is 400°C beyond which film properties deteriorate through S evaporation and CdO formation. On the other hand, Al : ZnO films prepared via spin coating of precursor sols containing 0.90–1.10 at.% Al show that, with an increase in Al concentration, the average grain size increases from 28 nm to 131 nm with an associated decrease in root-mean-square roughness. The minimum value of electrical resistivity, measured for the films prepared using 0.95 at.% Al in the precursor sol, is ~ 2.7 × 10-4 Ω ⋅ cm. The electrical resistivity value rises upon further increase in Al doping level due to introduction of lattice defects and Al segregation to the grain boundary area, thus limiting electron transport through it.

Effects of Mo back-contact annealing on surface potential and carrier transport in Cu2ZnSnS4 thin film solar cells

RSC Advances ◽  
2016 ◽  
Vol 6 (105) ◽  
pp. 103337-103345 ◽  
Author(s):  
Juran Kim ◽  
Gee Yeong Kim ◽  
William Jo ◽  
Kee-Jeong Yang ◽  
Jun-Hyoung Sim ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electrical Properties ◽  
Surface Potential ◽  
Carrier Transport ◽  
Annealing Temperature ◽  
Thin Film Solar Cells ◽  
Device Performance ◽  
Back Contact ◽  
Cu2znsns4 Thin Film

Mo annealing temperature of 500 °C enhances the electrical properties of CZTS absorber, leading to better device performance.

Anti-solvent dependent device performance in CH3NH3PbI3 solar cells: the role of intermediate phase content in the as-prepared thin films

2017 ◽  
Vol 1 (5) ◽  
pp. 1041-1048 ◽  
Author(s):  
Yang Li ◽  
Jianan Wang ◽  
Yi Yuan ◽  
Xiandui Dong ◽  
Peng Wang
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Intermediate Phase ◽  
Device Performance ◽  
Phase Content ◽  
Solution Processed ◽  
Inorganic Hybrid

Our work highlights the intrinsic role of an intermediate phase in controlling the film quality of a solution processed organic–inorganic hybrid CH3NH3PbI3.

Photovoltaic device performance of pure, manganese (Mn2+) doped and irradiated CuInSe2 thin films

2018 ◽  
Vol 42 (14) ◽  
pp. 11642-11652 ◽  
Author(s):  
P. Prabukanthan ◽  
R. Lakshmi ◽  
G. Harichandran ◽  
Tetiana Tatarchuk
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Single Step ◽  
Photovoltaic Device ◽  
Device Performance ◽  
Mn Doped

A successful single step ECD of pure CuInSe2 and Mn2+ doped CuInSe2 thin films was carried out. 5 mole% Mn doped CuInSe2 thin film-based solar cells exhibit better PCE.

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