Electronic and optical properties of Er-doped Y2O2S phosphors

2015 ◽  
Vol 3 (43) ◽  
pp. 11486-11496 ◽  
Author(s):  
M. Pokhrel ◽  
G. A. Kumar ◽  
C.-G. Ma ◽  
M. G. Brik ◽  
Brian W. Langloss ◽  
...  
Keyword(s):  
Optical Properties ◽  
Green Light ◽  
X Ray ◽  
Electronic And Optical Properties ◽  
Er Doped

Green light emitted from Y2O2S:1%Er phosphors after excited with NIR, UV and X-ray sources with emissions spectra under UV and NIR excitations (lower right) and X-ray excitation at different X-ray tube voltages (lower left).

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

scholarly journals Impact of Lithium Composition on Structural, Electronic and Optical Properties of Lithium Cobaltite Prepared by Solid-state Reaction

2014 ◽  
Vol 6 (2) ◽  
pp. 217-231 ◽  
Author(s):  
F. Khatun ◽  
M. A. Gafur ◽  
M. S. Ali ◽  
M. S. Islam ◽  
M. A. R. Sarker
Keyword(s):  
Optical Properties ◽  
Solid State ◽  
Ionic Conductivity ◽  
Cathode Material ◽  
Solid State Reaction ◽  
Layered Crystal ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electronic And Optical Properties ◽  
Lithium Cobaltite

The lithium-cobalt oxide LixCoO2 is a promising candidate as highly active cathode material of lithium ion rechargeable batteries. The crystalline-layered lithium cobaltite has attracted increased attention due to recent discoveries of some extraordinary properties such as unconventional transport and magnetic properties. Due to layered crystal structure, Li contents (x) in LixCoO2 might play an important role on its interesting properties. LiCoO2 crystalline cathode material was prepared by using solid-state reaction synthesis, and then LixCoO2 (x<1) has been synthesized by deintercalation of produced single-phase powders. Structure and morphology of the synthesized powders were investigated by X-ray diffraction (XRD), Infrared spectroscopy, Impedance analyzer etc. The influence of lithium composition (x) on structural, electronic and optical properties of lithium cobaltite was studied. Temperature dependent electrical resistivity was measured using four-probe technique. While LixCoO2 with x = 0.9 is a semiconductor, the highly Li-deficient phase (0.75 ? x ? 0.5) exhibits metallic conductivity. The ionic conductivity of LixCoO2 (x = 0.5 – 1.15) was measured using impedance spectroscopy and maximum conductivity of Li0.5CoO2 was found to be 6.5×10-6 S/cm at 273 K. The properties that are important for applications, such as ionic conductivity, charge capacity, and optical absorption are observed to increase with Li deficiency. Keywords: Calcination; Characterization; Inorganic compounds; Solid-State reaction; X-ray diffraction. © 2014 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved.doi: http://dx.doi.org/10.3329/jsr.v6i2.17900 J. Sci. Res. 6 (2), 217-231 (2014)  

Doping of GaN by ion implantation

2000 ◽  
Vol 647 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

AbstractIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 °C occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 µm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

scholarly journals First principles study of electronic and optical properties of Er-doped silicon nanoparticles with different densities

2011 ◽  
Vol 60 (12) ◽  
pp. 127302
Author(s):  
Wang Ying-Long ◽  
Wang Xiu-Li ◽  
Liang Wei-Hua ◽  
Guo Jian-Xin ◽  
Ding Xue-Cheng ◽  
...  
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Silicon Nanoparticles ◽  
Electronic And Optical Properties ◽  
First Principles Study ◽  
Doped Silicon ◽  
Er Doped

Effect of Erbium doping on GaN electronic and optical properties: First-principles study

2019 ◽  
Vol 33 (27) ◽  
pp. 1950327
Author(s):  
M. Lantri ◽  
A. Boukortt ◽  
S. Meskine ◽  
H. Abbassa ◽  
Y. Benaissa Cherif ◽  
...  
Keyword(s):  
Optical Properties ◽  
Imaginary Part ◽  
Structural Parameters ◽  
Local Spin Density Approximation ◽  
First Principle Calculation ◽  
Electronic And Optical Properties ◽  
Plane Wave Method ◽  
Semiconductor Behavior ◽  
Ferromagnetic Character ◽  
Er Doped

In this work, we studied the electronic and optical properties of [Formula: see text] with a concentration [Formula: see text]. Based on a first-principle calculation and using the FP-LAPW full-linearized augmented plane wave method, to see the doping phenomenon with Erbium (Er) [Formula: see text], we used the three approximations: local spin density approximation (LSDA), the LSDA[Formula: see text] with [Formula: see text] is the Hubbard potential and the Becke–Johnson modification (mBJ). Our results show that the values of the structural parameters increase with the substitution of Ga by the Erbium atom. The analysis of the electronic structures in this study shows that the Er-doped GaN has a semi-metallic ferromagnetic character with the LSDA and mBJ approximations and a semiconductor behavior when we apply the Hubbard potential [Formula: see text]. The real and imaginary part of the dielectric function, refractive index, and extinction coefficient are also calculated and presented in the photon energy range up to 14 eV. In the optical spectrum, the intensity of the absorption coefficient is observed in the imaginary part of both doped and undoped GaN in the ultraviolet regions.

scholarly journals Theoretical and experimental study on the electronic and optical properties of K0.5Rb0.5Pb2Br5: a promising laser host material

RSC Advances ◽  
2020 ◽  
Vol 10 (19) ◽  
pp. 11156-11164 ◽  
Author(s):  
Tuan V. Vu ◽  
A. A. Lavrentyev ◽  
B. V. Gabrelian ◽  
Dat D. Vo ◽  
Hien D. Tong ◽  
...  
Keyword(s):  
Experimental Study ◽  
Optical Properties ◽  
Electronic Structure ◽  
Host Material ◽  
First Principle ◽  
X Ray ◽  
Electronic And Optical Properties ◽  
First Principle Calculations

The data on the electronic structure and optical properties of bromide K0.5Rb0.5Pb2Br5 achieved by first-principle calculations and verified by X-ray spectroscopy measurements are reported.

Electronic and optical properties of Er doped in AlN

2015 ◽  
Vol 29 (21) ◽  
pp. 1550114 ◽  
Author(s):  
Sanjun Wang ◽  
Xueqing Wang ◽  
Jinming Li ◽  
Yu Jia ◽  
Fei Wang
Keyword(s):  
Optical Properties ◽  
Electronic Structures ◽  
Density Functional ◽  
Optical Constants ◽  
Functional Theory ◽  
Electronic And Optical Properties ◽  
Complex Defect ◽  
Small Peak ◽  
Related Defect ◽  
Er Doped

Using density functional theory combined [Formula: see text] method, the structural, electronic and optical properties of rare earth Er substituted Al atom [Formula: see text] and its complex with neighboring N vacancy [Formula: see text]-[Formula: see text] in wurtzite AlN were investigated, respectively. Calculated results show that both defects induced quite localized [Formula: see text]-[Formula: see text] related defect donor levels in the band gap but had few effects on host electronic structures. Moreover, the calculated complex dielectric functions and other optical constants show that these two defects show clear bulk optical properties, only a small peak near the redshift edge appears for the complex defect. These results show that Er dopant AlN should be a good optical material candidate for optoelectronics application.

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