Evaluation of the energy barrier for failure of Au atomic contact based on temperature dependent current–voltage characteristics

AbstractThe bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

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Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

MRS Proceedings ◽

10.1557/proc-0957-k10-21 ◽

2006 ◽

Vol 957 ◽

Author(s):

Yahya Alivov ◽

Xiao Bo ◽

Fan Qian ◽

Daniel Johnstone ◽

Cole Litton ◽

...

Keyword(s):

Conduction Band ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Band Offset ◽

Measured Temperature ◽

Temperature Dependent ◽

Conduction Band Offset ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

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Electrical Injection and Transport in Films of Semiconductor Nanocrystals

MRS Proceedings ◽

10.1557/proc-571-185 ◽

1999 ◽

Vol 571 ◽

Cited By ~ 1

Author(s):

D.S. Ginger ◽

N.C. Greenham

Keyword(s):

Semiconductor Nanocrystals ◽

Cdse Nanocrystals ◽

Temperature Dependent ◽

Metal Electrodes ◽

Current Voltage ◽

Disordered Films ◽

Effective Mobility ◽

Current Voltage Characteristics ◽

Space Charge Limited Currents ◽

Effective Carrier

ABSTRACTWe study injection and transport in thin disordered films of CdSe nanocrystals between metal electrodes, We investigate the current-voltage characteristics of these devices as a function of electrode material, nanocrystal size, and temperature. We also measure the photocurrent response of these devices, and find that the photocurrent action spectra follow the quantum-confined absorption spectra of the nanocrystals. For dissimilar top and bottom electrodes, we find that the devices are highly rectifying. By studying space charge limited currents in these devices, we are able to place a lower bound on the effective carrier mobility in such films, and we find that the effective mobility is strongly field dependent. We find that the conductivity is strongly temperature dependent, and is qualitatively consistent with an activated hopping process at temperatures above 180 K.

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