Electrical Injection and Transport in Films of Semiconductor Nanocrystals

1999 ◽  
Vol 571 ◽  
Author(s):  
D.S. Ginger ◽  
N.C. Greenham
Keyword(s):  
Semiconductor Nanocrystals ◽  
Cdse Nanocrystals ◽  
Temperature Dependent ◽  
Metal Electrodes ◽  
Current Voltage ◽  
Disordered Films ◽  
Effective Mobility ◽  
Current Voltage Characteristics ◽  
Space Charge Limited Currents ◽  
Effective Carrier

ABSTRACTWe study injection and transport in thin disordered films of CdSe nanocrystals between metal electrodes, We investigate the current-voltage characteristics of these devices as a function of electrode material, nanocrystal size, and temperature. We also measure the photocurrent response of these devices, and find that the photocurrent action spectra follow the quantum-confined absorption spectra of the nanocrystals. For dissimilar top and bottom electrodes, we find that the devices are highly rectifying. By studying space charge limited currents in these devices, we are able to place a lower bound on the effective carrier mobility in such films, and we find that the effective mobility is strongly field dependent. We find that the conductivity is strongly temperature dependent, and is qualitatively consistent with an activated hopping process at temperatures above 180 K.

Si1−xGex Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus

1999 ◽  
Vol 607 ◽  
Author(s):  
S. Kato ◽  
T. Horikoshi ◽  
T. Ohkubo ◽  
T. Iida ◽  
Y. Takano
Keyword(s):  
Silicon Germanium ◽  
Bulk Crystals ◽  
Temperature Dependent ◽  
Alloy Scattering ◽  
Self Diffusion ◽  
Pn Junction ◽  
Current Voltage ◽  
Vertical Bridgman ◽  
Current Voltage Characteristics ◽  
P Type

AbstractThe bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

Optical and Electrical Properties of Some Organic Thin Films for Optoelectronic Applications

2011 ◽  
Vol 337 ◽  
pp. 426-429
Author(s):  
S.B. Chen ◽  
Zhi You Zhong
Keyword(s):  
Thin Films ◽  
Experimental Studies ◽  
Visible Region ◽  
Organic Thin Films ◽  
Optical Transmittance ◽  
Vacuum Sublimation ◽  
Semiconductor Thin Films ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effective Carrier

Organic semiconductor thin films of bis-(2-methyl-8-quinolinolato)-4-(phenyl-phenolato) -aluminium-(III) (BAlq), N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl)benzidine (NPB), and tris-(8- hydroxyquinoline) aluminum (Alq) were prepared by the vacuum sublimation technique. The optical properties in the UV-visible region of the thin films were investigated by optical transmittance and absorbance spectra. The optical energy gaps were obtained from direct allowed transitions at room temperature by Tauc’s law. The Urbach energy and the slope of Urbach edge were estimated by the Urbach-edges method, respectively. Furthermore, the current-voltage characteristics of organic thin films were analyzed, and the different slopes in the lower and higher voltage regions were observed. From the experimental studies, the effective carrier mobility, free carrier density, and electrical conductivity were also evaluated respectively.

Study of Nonlinear Current-Voltage Characteristic of Semiconductor Ceramic by the Method of Tilted Energy Band

2014 ◽  
Vol 941-944 ◽  
pp. 547-550
Author(s):  
Chao Fang ◽  
Liang Yan Chen
Keyword(s):  
Grain Size ◽  
Energy Band ◽  
Breakdown Field ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Non Linear ◽  
Semiconducting Ceramics ◽  
Current Voltage Characteristics ◽  
Effective Carrier ◽  
Grain Boundary Barrier

A analytic method for the calculation of the electrical characteristics of semiconducting ceramics is suggested. This paper put forward the concept of effective carrier concentration. Electrical characteristics under extra electric field have been calculated by the method of tilted energy band. The non-linear current-voltage characteristics with different grain sizes has been obtained. The results pointed out that the current-voltage characteristics divide into three regions: Linear region before breakdown field, nonlinear region near breakdown field and upturn region after breakdown field; The grain boundary barrier leads to the strong non-linear characteristics, which has nothing to do with the grain size. With the grain size decreasing, the breakdown field increases. The results are compared with experimental data.

Temperature-dependent current–voltage characteristics of Er-silicide Schottky contacts to strained Si-on-insulator

2013 ◽  
Vol 556 ◽  
pp. 252-258 ◽  
Author(s):  
I. Jyothi ◽  
Min-Woo Seo ◽  
V. Janardhanam ◽  
Kyu-Hwan Shim ◽  
Young-Boo Lee ◽  
...  
Keyword(s):  
Schottky Contacts ◽  
Temperature Dependent ◽  
Strained Si ◽  
Current Voltage ◽  
Current Voltage Characteristics
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