Relationships between the solution and solid-state properties of solution-cast low-k silica thin films

2016 ◽  
Vol 18 (30) ◽  
pp. 20371-20380 ◽  
Author(s):  
Chao-Ching Chiang ◽  
Chien-You Su ◽  
An-Chih Yang ◽  
Ting-Yu Wang ◽  
Wen-Ya Lee ◽  
...  

This paper reports on the fabrication of low-k (amorphous) silica thin films cast from solutions without and with two different types of surfactants (TWEEN® 80 and Triton™ X-100) to elucidate the relationships between the structural/morphological features of the casting solutions and the physical properties of the resulting thin films.

1989 ◽  
Vol 167 ◽  
Author(s):  
Paul R. Resnick

AbstractTeflon® AF is a family of amorphous fluoropolymers with glass transition temperatures as high as 300° based on bis-2,2-trfluoromethyl-4,5-difluoro-1,3-dioxole, (I), which has unusual properties [1–3] (Figure 1). The family retains the superior electrical, chemical resistance and thermal properties associated with fluoropolymers. In addition the polymers have high optical clarity, limited solubility in some commercially available perfluorinated ethers such as Fluorinert® FC-75 and improved physical properties below their glass transition temperatures (Figure 2). Teflon® AF polymers may be either solution cast into clear micron thin films or melt processed into a variety of forms.


2014 ◽  
Vol 10 ◽  
pp. 1692-1705 ◽  
Author(s):  
Andreas R Waterloo ◽  
Anna-Chiara Sale ◽  
Dan Lehnherr ◽  
Frank Hampel ◽  
Rik R Tykwinski

A series of 11 new pentacene derivatives has been synthesized, with unsymmetrical substitution based on a trialkylsilylethynyl group at the 6-position and various aryl groups appended to the 13-position. The electronic and physical properties of the new pentacene chromophores have been analyzed by UV–vis spectroscopy (solution and thin films), thermoanalytical methods (DSC and TGA), cyclic voltammetry, as well as X-ray crystallography (for 8 derivatives). X-ray crystallography has been specifically used to study the influence of unsymmetrical substitution on the solid-state packing of the pentacene derivatives. The obtained results add to our ability to better predict substitution patterns that might be helpful for designing new semiconductors for use in solid-state devices.


2003 ◽  
Vol 125 (4) ◽  
pp. 361-367 ◽  
Author(s):  
Xiaoqin Huang ◽  
Assimina A. Pelegri

MEMS (MicroElectroMechanical Systems) are composed of thin films and composite nanomaterials. Although the mechanical properties of their constituent materials play an important role in controlling their quality, reliability, and lifetime, they are often found to be different from their bulk counterparts. In this paper, low-k porous silica thin films spin coated on silicon substrates are studied. The roughness of spin-on coated porous silica films is analyzed with in-situ imaging and their mechanical properties are determined using nanoindentation. A Berkovich type nanoindenter, of a 142.3 deg total included angle, is used and continuous measurements of force and displacements are acquired. It is shown, that the measured results of hardness and Young’s modulus of these films depend on penetration depth. Furthermore, the film’s mechanical properties are influenced by the properties of the substrate, and the reproduction of the force versus displacement curves depends on the quality of the thin film. The hardness of the studied low-k spin coated silica thin film is measured as 0.35∼0.41 GPa and the Young’s modulus is determined as 2.74∼2.94 GPa.


2013 ◽  
Vol 117 (7) ◽  
pp. 3475-3482 ◽  
Author(s):  
M. Boffelli ◽  
M. Back ◽  
E. Cattaruzza ◽  
F. Gonella ◽  
E. Trave ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (82) ◽  
pp. 52274-52282 ◽  
Author(s):  
F. M. Elam ◽  
B. C. A. M. van der Velden-Schuermans ◽  
S. A. Starostin ◽  
M. C. M. van de Sanden ◽  
H. W. de Vries

The lattice porosity of flexible silica encapsulation films can be regulated by varying the specific energy during the AP-PECVD process.


2003 ◽  
Vol 102 (1-3) ◽  
pp. 403-408 ◽  
Author(s):  
R.Escobar Galindo ◽  
A van Veen ◽  
H Schut ◽  
S.W.H Eijt ◽  
C.V Falub ◽  
...  

2021 ◽  
pp. 138811
Author(s):  
S. Ben Khemis ◽  
E. Burov ◽  
H. Montigaud ◽  
D. Skrelic ◽  
E. Gouillart ◽  
...  

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