Ethoxy and silsesquioxane derivatives of antimony as dopant precursors: unravelling the structure and thermal stability of surface species on SiO2
2017 ◽
Vol 19
(12)
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pp. 8595-8601
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Keyword(s):
We report here the controlled preparation of SiO2 supported Sb-(mono)layers and their thorough characterization (in situ IR, solid-state NMR, elemental analyses) for the non-destructive Sb-doping of semiconductors.
1987 ◽
Vol 42
(4)
◽
pp. 489-494
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Thermodynamically stable [4 + 2] cycloadducts of lanthanum-encapsulated endohedral metallofullerenes
2014 ◽
Vol 10
◽
pp. 714-721
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2007 ◽
Vol 50
(3)
◽
pp. 677
◽
1990 ◽
Vol 23
(6)
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pp. 545-549
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