Thermal stability of Pt nanowires manufactured by Ga+ focused ion beam (FIB)

2003 ◽  
Vol 777 ◽  
Author(s):  
B.J. Inkson ◽  
G. Dehm
Keyword(s):  
Thermal Stability ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Wire Surface ◽  
Cross Sectional ◽  
Partial Crystallization ◽  
Fcc Structure ◽  
Thermal Stability Of ◽  
Pt Nanowires

AbstractPt nanowires have been produced by FIB deposition of Pt thin films in a commercial Ga+ focused ion beam (FIB) system, followed by cross-sectional sputtering to form electron transparent Pt nanowires. The thermal stability of amorphous FIB manufactured Pt wires has been investigated by in-situ thermal cycling in a TEM. The Pt wires are stable up to 580-650°C where partial crystallization is observed in vacuum. Facetted nanoparticles grow on the wire surface, growing into free space by surface diffusion and minimising contact area with the underlying wire. The particles are fcc Pt with some dissolved Ga. Continued heating results in particle spheroidization, coalescence and growth, retaining the fcc structure.

Sputtered Cu Films Containing Various Insoluble Substances for Advanced Barrierless Metallization

2007 ◽  
Vol 539-543 ◽  
pp. 3497-3502 ◽  
Author(s):  
J.P. Chu ◽  
C.H. Lin
Keyword(s):  
Thermal Stability ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
The Other ◽  
Oxide Semiconductor ◽  
Good Thermal Stability ◽  
Cu Films ◽  
Pure Cu ◽  
Thermal Stability Of

Sputtered Cu films containing various insoluble substances, such as Cu(W2.3), Cu(Mo2.0), Cu(Nb0.4), Cu(C2.1) and Cu(W0.4C0.7), are examined in this study. These films are prepared by magnetron sputtering, followed by thermal annealing. The crystal structure, microstructure, SIMS depth-profiles, leakage current, and resistivity of the films are investigated. Good thermal stability of these Cu films is confirmed with focused ion beam, X-ray diffractometry, SIMS, and electrical property measurements. After annealing at 400°C, obvious drops in resistivity, to ~3.8 μ-cm, are seen for Cu(W) film, which is lower than the other films. An evaluation of the leakage current characteristic from the SiO2/Si metal-oxide-semiconductor (MOS) structure also demonstrates that Cu with dilute tungsten is more stable than the other films studied. These results further indicate that the Cu(W) film has more thermal stability than the Cu(Mo), Cu(Nb), Cu(C), Cu(WC) and pure Cu films. Therefore, the film is suitable for the future barrierless metallization.

A Preparation Method of Diamond Specimens Using an Advanced FIB Microscopy for Micro and Nanoanalysis

2012 ◽  
Vol 531-532 ◽  
pp. 592-595
Author(s):  
Yi Qing Chen ◽  
Feng Zai Tang ◽  
Liang Chi Zhang
Keyword(s):  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Polycrystalline Diamond ◽  
Specimen Preparation ◽  
Atomic Lattice ◽  
Cross Sectional ◽  
Site Specific ◽  
Dual Beam

This paper reports the specimen preparation using an advanced dual beam focused ion beam (FIB) technique for bulk polycrystalline diamond (PCD) composites after dynamic friction polishing (DFP). The technique adapted allows for precisely processing diamond materials at the specific polishing track sites of PCD surface, from which large cross-sectional specimens for SEM/EDS/Raman microanalysis could be successfully created. In addition, an in-situ lift-out method was developed to prepare the site-specific HRTEM specimens which were thin enough for imaging the atomic lattice of diamond and for conducting EELS analysis.

Silver Metallization with Reactively Sputtered TiN Diffusion Barrier Films

2004 ◽  
Vol 812 ◽  
Author(s):  
L. Gao ◽  
J. Gstöttner ◽  
R. Emling ◽  
Ch. Linsmeier ◽  
M. Balden ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Photoelectron Spectroscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Measurement ◽  
Silver Layer ◽  
X Ray ◽  
Thermal Stability Of

AbstractThe physical and electrical properties as well as thermal stability of reactively sputtered titanium nitride (TiN) film serving as a diffusion barrier was studied for silver (Ag) metallization. The thermal stability of Ag/TiN metallizations on Si with 12-nm-thick TiN barriers, as-deposited and after annealing at 300-650°C in N2/H2 for 30 min, was investigated with sheet resistance measurement, X-ray diffraction, focused ion beam-scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectroscopy. According to electrical measurement no change of sheet resistance was found after annealing at 600°C, but an abrupt rise appeared at 650°C annealing. There are two causes by which the Ag/TiN/Si structure became degraded. One is agglomeration of the silver layer, and the other is oxidation and diffusion which are also associated problems during thermal annealing.

Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

2018 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jeff Blackwood ◽  
Stacey Stone ◽  
Michael Schmidt ◽  
Mark Williamson ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Planar Surface ◽  
Device Structure ◽  
Cross Sectional ◽  
Device Structures ◽  
The Cross ◽  
Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

Site-Specific Low Angle Plasma FIB Milling for Cross-Sectional Electrical Characterization

2019 ◽  
Author(s):  
Chuan Zhang ◽  
Jane Y. Li ◽  
John Aguada ◽  
Howard Marks
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Electrical Characteristic ◽  
Preparation Method ◽  
Ion Beam ◽  
Grazing Angle ◽  
Electrical Characterization ◽  
Sample Preparation Method ◽  
Cross Sectional ◽  
Site Specific

Abstract This paper introduces a novel sample preparation method using plasma focused ion-beam (pFIB) milling at low grazing angle. Efficient and high precision preparation of site-specific cross-sectional samples with minimal alternation of device parameters can be achieved with this method. It offers the capability of acquiring a range of electrical characteristic signals from specific sites on the cross-section of devices, including imaging of junctions, Fins in the FinFETs and electrical probing of interconnect metal traces.

Investigations of Leakage Paths in Sub-0.35μm DRAM Products Using Advanced Focused Ion Beam Techniques

1998 ◽  
Author(s):  
H. Lorenz ◽  
C. Engel
Keyword(s):  
Focused Ion Beam ◽  
Cell Function ◽  
Dielectric Breakdown ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Floating Gate ◽  
Leakage Path ◽  
Contrast Technique ◽  
Voltage Contrast

Abstract Due to the continuously decreasing cell size of DRAMs and concomitantly diminishing thickness of some insulating layers new failure mechanisms appear which until now had no significance for the cell function. For example high resistance leakage paths between closely spaced conductors can lead to retention problems. These are hard to detect by electrical characterization in a memory tester because the involved currents are in the range of pA. To analyze these failures we exploit the very sensitive passive voltage contrast of the Focused Ion Beam Microscope (FIB). The voltage contrast can further be enhanced by in-situ FIB preparations to obtain detailed information about the failure mechanism. The first part of this paper describes a method to detect a leakage path between a borderless contact on n-diffusion and an adjacent floating gate by passive voltage contrast achieved after FIB circuit modification. In the second part we will demonstrate the localization of a DRAM trench dielectric breakdown. In this case the FIB passive voltage contrast technique is not limited to the localization of the failing trench. We can also obtain the depth of the leakage path by selective insitu etching with XeF2 stopped immediately after a voltage contrast change.

scholarly journals Thermal stability and diffusion characteristics of ultrathin amorphous carbon films grown on crystalline and nitrogenated silicon substrates by filtered cathodic vacuum arc deposition

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shengxi Wang ◽  
Anurag Roy ◽  
Kyriakos Komvopoulos
Keyword(s):  
Thermal Stability ◽  
Amorphous Carbon ◽  
Silicon Substrate ◽  
Elevated Temperatures ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Cross Sectional ◽  
Prolonged Heating ◽  
Filtered Cathodic Vacuum Arc ◽  
Thermal Stability Of

AbstractAmorphous carbon (a-C) films are widely used as protective overcoats in many technology sectors, principally due to their excellent thermophysical properties and chemical inertness. The growth and thermal stability of sub-5-nm-thick a-C films synthesized by filtered cathodic vacuum arc on pure (crystalline) and nitrogenated (amorphous) silicon substrate surfaces were investigated in this study. Samples of a-C/Si and a-C/SiNx/Si stacks were thermally annealed for various durations and subsequently characterized by high-resolution transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). The TEM images confirmed the continuity and uniformity of the a-C films and the 5-nm-thick SiNx underlayer formed by silicon nitrogenation using radio-frequency sputtering. The EELS analysis of cross-sectional samples revealed the thermal stability of the a-C films and the efficacy of the SiNx underlayer to prevent carbon migration into the silicon substrate, even after prolonged heating. The obtained results provide insight into the important attributes of an underlayer in heated multilayered media for preventing elemental intermixing with the substrate, while preserving the structural stability of the a-C film at the stack surface. An important contribution of this investigation is the establishment of an experimental framework for accurately assessing the thermal stability and elemental diffusion in layered microstructures exposed to elevated temperatures.

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