Micro-Raman and electronic structure study on kinetics of electronic excitations induced monoclinic-to-tetragonal phase transition in zirconium oxide films

RSC Advances ◽  
2016 ◽  
Vol 6 (106) ◽  
pp. 104425-104432 ◽  
Author(s):  
Mukesh Rawat ◽  
Arkaprava Das ◽  
D. K. Shukla ◽  
Parasmani Rajput ◽  
A. Chettah ◽  
...  

Monoclinic-to-tetragonal phase transformation (PT) in sputtering grown zirconium oxide (ZrO2) films on silicon substrates by electronic excitation (EE) induced by swift heavy ion (SHI) irradiation is reported.

RSC Advances ◽  
2021 ◽  
Vol 11 (42) ◽  
pp. 26218-26227
Author(s):  
R. Panda ◽  
S. A. Khan ◽  
U. P. Singh ◽  
R. Naik ◽  
N. C. Mishra

Swift heavy ion (SHI) irradiation in thin films significantly modifies the structure and related properties in a controlled manner.


2010 ◽  
Vol 160-162 ◽  
pp. 1012-1015
Author(s):  
Jian Rong Sun ◽  
Zhi Guang Wang ◽  
Yu Yu Wang ◽  
Kong Fang Wei ◽  
Tie Long Shen ◽  
...  

Polycrystalline magnetite (Fe3O4) thin films is synthesized at low temperature (90 oC) by electroless plating in aqueous solution, and the behavior of the magnetic property of the Fe3O4 thin film irradiated by Kr26+ ions at energy of 2.03 GeV is investigated by magnetization measurements. The initial crystallographic structure of the Fe3O4 remains unaffected after swift heavy ion (SHI) irradiation, but both coercive force and saturation magnetization are sensitive to Kr26+ ion irradiation and exhibit different behaviors depending on the ion fluence range. And SHI irradiation could make the magnetic moments of the Fe3O4 films ordered around the columnar defects and the magnetic moments tend to arrange along the films plane. All modifications of the magnetic properties could be interpreted very well by the effects related to the stress and defects induced by SHI irradiation.


2000 ◽  
Vol 643 ◽  
Author(s):  
Ratnamala Chatterjee ◽  
Aloke Kanjilal ◽  
A. Dunlop

AbstractThe effect of pure electronic excitations (by ∼ 835 MeV Kr irradiation) on a stable icosahedral quasicrystal is compared with the effect of electronic excitations combined with the nuclear collisions (by 100 MeV Ni irradiation) occurring in a similar quasicrystal. The critical stopping power was kept at 1300 eV/Å for both the experiments. Under the pure electronic excitations, the R(φ)/R(0) [ratio of resistance at fluence φ and the resistance on the same piece with zero fluence) of quasicrystal goes through oscillatory changes, until at ∼ 1 × 1012 ions/cm2where this ratio drops considerably. The ex-situ XRD on the irradiated sample does show the evidence of degradation of the structure. In contrast, the Ni- irradiated sample shows an increase in resistivity after a critical fluence of 2.5 × 1013 ions/cm2, which remains constant for higher fluences. Corresponding defect annihilation effects are observed in the XRD of Ni- irradiated samples.


2021 ◽  
Author(s):  
Nikesh N. Ingle ◽  
Pasha Sayyad ◽  
Gajanan Bodkhe ◽  
Harshada Patil ◽  
Megha Deshmukh ◽  
...  

Abstract Repercussion of Swift Heavy Ion (SHI) irradiation on nickel-based nanorods of Metal-Organic Framework (NRs-Ni3HHTP2-MOF) for enhancement in the properties of ChemFET based gas sensor has been investigated. Nanorods of Ni3HHTP2-MOF were synthesized by chemical method and exposed to C12+ ions irradiation with fluence 1x1011 ion/cm2 and 1x1012 ion/cm2. The structural, spectroscopic morphological and optical characterizations were carried out using x-ray diffraction (XRD), fourier transfer infrared spectroscopy (FTIR), atomic force microscopy (AFM) with scanning electron microscopy (SEM) and UV-visible spectroscopy were studied respectively. Whereas the bandgap was calculated from Tauc's plot. The synthesized nanorods of Ni3HHTP2 MOF were drop-casted on gold coated microelectrodes on silicon/silicon dioxide (Si/SiO2) substrate, where silicon layer serves as a gate and gold microelectrodes on silicon/silicon dioxide (Si/SiO2) substrate as a source and drain. The transmutations in material properties due to SHI irradiations were serviceable for enhancing field-effect transistor (transfer and output) properties.


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