scholarly journals ChemFET sensor: Repercussion of Swift Heavy Ion irradiation on nanorods of nickel-based (NRs-Ni3HHTP2) Metal-Organic framework

Author(s):  
Nikesh N. Ingle ◽  
Pasha Sayyad ◽  
Gajanan Bodkhe ◽  
Harshada Patil ◽  
Megha Deshmukh ◽  
...  

Abstract Repercussion of Swift Heavy Ion (SHI) irradiation on nickel-based nanorods of Metal-Organic Framework (NRs-Ni3HHTP2-MOF) for enhancement in the properties of ChemFET based gas sensor has been investigated. Nanorods of Ni3HHTP2-MOF were synthesized by chemical method and exposed to C12+ ions irradiation with fluence 1x1011 ion/cm2 and 1x1012 ion/cm2. The structural, spectroscopic morphological and optical characterizations were carried out using x-ray diffraction (XRD), fourier transfer infrared spectroscopy (FTIR), atomic force microscopy (AFM) with scanning electron microscopy (SEM) and UV-visible spectroscopy were studied respectively. Whereas the bandgap was calculated from Tauc's plot. The synthesized nanorods of Ni3HHTP2 MOF were drop-casted on gold coated microelectrodes on silicon/silicon dioxide (Si/SiO2) substrate, where silicon layer serves as a gate and gold microelectrodes on silicon/silicon dioxide (Si/SiO2) substrate as a source and drain. The transmutations in material properties due to SHI irradiations were serviceable for enhancing field-effect transistor (transfer and output) properties.

RSC Advances ◽  
2021 ◽  
Vol 11 (42) ◽  
pp. 26218-26227
Author(s):  
R. Panda ◽  
S. A. Khan ◽  
U. P. Singh ◽  
R. Naik ◽  
N. C. Mishra

Swift heavy ion (SHI) irradiation in thin films significantly modifies the structure and related properties in a controlled manner.


2010 ◽  
Vol 160-162 ◽  
pp. 1012-1015
Author(s):  
Jian Rong Sun ◽  
Zhi Guang Wang ◽  
Yu Yu Wang ◽  
Kong Fang Wei ◽  
Tie Long Shen ◽  
...  

Polycrystalline magnetite (Fe3O4) thin films is synthesized at low temperature (90 oC) by electroless plating in aqueous solution, and the behavior of the magnetic property of the Fe3O4 thin film irradiated by Kr26+ ions at energy of 2.03 GeV is investigated by magnetization measurements. The initial crystallographic structure of the Fe3O4 remains unaffected after swift heavy ion (SHI) irradiation, but both coercive force and saturation magnetization are sensitive to Kr26+ ion irradiation and exhibit different behaviors depending on the ion fluence range. And SHI irradiation could make the magnetic moments of the Fe3O4 films ordered around the columnar defects and the magnetic moments tend to arrange along the films plane. All modifications of the magnetic properties could be interpreted very well by the effects related to the stress and defects induced by SHI irradiation.


2011 ◽  
Vol 213 ◽  
pp. 325-329 ◽  
Author(s):  
Jian Rong Sun ◽  
Zhi Guang Wang ◽  
Yu Yu Wang ◽  
Cun Feng Yao ◽  
Kong Fang Wei ◽  
...  

MnZn ferrite thin films are deposited by alternative sputtering technique from two targets with the composition of MnFe2O4 and ZnFe2O4, and the behavior of the magnetic properties of the MnZn ferrite thin films irradiated by Kr26+ ions at energy of 2.03 GeV is investigated by magnetization measurements. The fabricating and modifying conditions on the performance of the films are studied to improve Ms and reduce Hc of the films, making the films suitable to the applications of high-frequency film devices. For Mn1-xZnxFe2O4 thin films, the Ms increases firstly then decreases and Hc decreases monotonously with increasing Zn content. And both Ms and Hc are sensitive to Kr26+ ion irradiation and exhibit different behaviors depending on the ion fluence range. The modifications of the magnetic properties could be interpreted very well by the effects related to the stress and defects induced by SHI irradiation.


Author(s):  
José Cardoso ◽  
Nabiha Ben Sedrine ◽  
Przemysław Jóźwik ◽  
Miguel C. Sequeira ◽  
Christian M. Wetzel ◽  
...  

Xe SHI irradiation of InGaN/GaN MQWs leads to surface damage and intermixing at the interfaces. The introduced defects cause a strong quenching of the luminescence as well as a change in the excitation mechanisms.


2011 ◽  
Vol 10 (01n02) ◽  
pp. 161-165 ◽  
Author(s):  
A. KUMAR ◽  
SOMIK BANERJEE

Swift heavy ion (SHI) (energy > 1 MeV/u) irradiation of polymer nanostructures is a novel technique to tailor their structure and properties. Polyaniline nanofibers synthesized by interfacial polymerization using HCl and camphor sulfonic acid (CSA) as dopants have been irradiated with 90 MeV O 7+ ion at different fluences of 3 × 1010, 3 × 1011, and 1 × 1012 ions/cm2. TEM micrographs of the irradiated nanofibers reveal a gradual decrease in the size of the nanofibers with an increase in fluence, which could be attributed to the strain-induced fragmentation upon SHI irradiation. The generation of strain in the PAni nanofibers upon SHI irradiation can be explained on the basis of the Coulomb explosion model. X-ray diffraction analysis for both the HCl and CSA-doped nanofibers shows broadening of the peak at 2θ = 20.050, which can be attributed to the reduced domain length and enhanced strain in the material. The two contributions have been separated out. The samples have been characterized with microRaman spectroscopy, which shows a decrease in the intensity of the Raman active modes that can be attributed to the reduction in size of the nanofibers leading to the amorphization of the material.


2011 ◽  
Vol 1354 ◽  
Author(s):  
G. Devaraju ◽  
Anand P. Pathak ◽  
N. Srinivasa Rao ◽  
V. Saikiran ◽  
N. Sathish ◽  
...  

ABSTRACTWe report here swift heavy ion (SHI) irradiation induced effects on structural and surface properties of III-nitrides. Tensile strained Al(1-x)InxN/GaN Hetero-Structures (HS) were realized using Metal Organic Chemical Vapour Despotion (MOCVD) technique with indium composition as 12%. Ion species and energies are chosen such that electronic energy deposition rates differ significantly in Al(1-x)InxN and are essential for understanding the ion beam interactions at the interfaces. Thus the samples were irradiated with 80 MeV Ni6+ and 100 MeV Ag7+ ions at varied fluence (1×1012 and 3 ×1012 ions/cm2) to alter the structural properties. Under this energy regime, the structural changes in Al(1-x)InxN would occur due to the intense ultrafast excitations of electrons along the ion path. We employed different characterization techniques like High Resolution X- ray Diffraction (HRXRD) and Rutherford back scattering spectrometry (RBS) for composition, thickness and strain. HRXRD and RBS experimental spectra have been fitted with Philip’s epitaxy SIMNRA code, which yields thickness and composition from compound semiconductors. The surface morphology of pristine and irradiated samples is studied and compared by Atomic Force Microscopy (AFM).


Author(s):  
Pasha W. Sayyad ◽  
Nikesh N. Ingle ◽  
Gajanan A. Bodkhe ◽  
Megha A. Deshmukh ◽  
Harshada K. Patil ◽  
...  

2010 ◽  
Vol 1269 ◽  
Author(s):  
Prem Narain Gupta ◽  
Govind Kumar Prajapati ◽  
Rupesh Roshan

AbstractSwift heavy ion (SHI) irradiation effects on ionic conduction in the PVA-H3PO4 polymer electrolyte films have been investigated due to its variety of applications in electrochemical devices. Polymer electrolytes films are irradiated with 50 MeV Li3+ ions having five different fluences viz. 5x1010, 1011, 5x1011, 1012 and 5x1012 ions/cm2. It is observed that irradiation of the polymer electrolyte films with swift heavy ions shows enhancement in conductivity at lower fluences and decrease in conductivity at higher fluences. It appears that below the critical fluence, swift heavy ion irradiation increases the diffusivity of Li+ ion in the polymer electrolyte which provides larger pathways for ionic transport throughout the system. The temperature dependence of electrical conductivity variation has been used to compute the activation energy involved in conduction process.


2013 ◽  
Vol 209 ◽  
pp. 18-22
Author(s):  
Komal H. Bhavsar ◽  
Utpal S. Joshi ◽  
Bhaumik V. Mistry ◽  
U.V. Chhaya ◽  
S.A. Khan ◽  
...  

Swift heavy ion (SHI) irradiation of materials induces variety of functionalities and tenability in advance materials. Recent observations of electrical switching in perovskite oxides have triggered a lot of interest for its potential use as non volatile random access memory (NVRAM). We report on the resistance switching induced by swift heavy ion SHI irradiation in La0.7Sr0.3MnO3 (LSMO) thin films grown on SiO2 substrates by chemical solution deposition technique. Well defined hysteresis loops with sharp on-off transition in the I-V curves were observed for the sample irradiated with 100 MeV Ag+7 ions at 1x1012 ions/cm2, indicating that the sample possess low resistance state (LRS) and high resistance state (HRS). Symmetrical resistance ratio (Rhigh/Rlow) of ~ 330% at -1.7 V has been achieved whereas the pristine samples showed only linear I-V characteristics. The RS is bipolar and may be attributed to SHI induced defects in the device. Such defect induced resistive switching has recently been proposed theoretically and our results are direct evidence of the phenomenon.


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