Progress in pulsed laser deposited two-dimensional layered materials for device applications

Recent advances of preparing two-dimensional (2D) materials by pulsed laser deposition (PLD) are presented, including deposition processes, structure and characterization. The performance of proof-of-concept electronic or optoelectronic devices based on PLD grown 2D materials is introduced.

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Pulsed laser deposition of single-layer MoS2 on Au(111): from nanosized crystals to large-area films

Nanoscale Advances ◽

10.1039/c8na00126j ◽

2019 ◽

Vol 1 (2) ◽

pp. 643-655 ◽

Cited By ~ 11

Author(s):

Francesco Tumino ◽

Carlo S. Casari ◽

Matteo Passoni ◽

Valeria Russo ◽

Andrea Li Bassi

Keyword(s):

Pulsed Laser Deposition ◽

2D Materials ◽

Optoelectronic Devices ◽

Pulsed Laser ◽

Single Layer ◽

Laser Deposition ◽

Large Area ◽

Molybdenum Disulphide ◽

High Quality ◽

Nanosized Crystals

Molybdenum disulphide (MoS2) is a promising material for heterogeneous catalysis and novel 2D optoelectronic devices. In this work, single-layer MoS2 is synthesized on Au(111) by pulsed laser deposition, showing the potentialities of this technique in the synthesis of high-quality 2D materials films.

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Fabrication and Characterization of Two-Dimensional Layered MoS2 Thin Films by Pulsed Laser Deposition

Advances in Condensed Matter Physics ◽

10.1155/2018/3485380 ◽

2018 ◽

Vol 2018 ◽

pp. 1-5 ◽

Cited By ~ 1

Author(s):

Lei Jiao ◽

Yuehui Wang ◽

Yusong Zhi ◽

Wei Cui ◽

Zhengwei Chen ◽

...

Keyword(s):

Pulsed Laser Deposition ◽

Large Scale ◽

Field Effect Transistors ◽

Pulsed Laser ◽

Laser Deposition ◽

Universal Method ◽

Two Dimensional ◽

Practical Applications ◽

Device Applications ◽

Direct Growth

Direct growth of uniform wafer-scale two-dimensional (2D) layered materials using a universal method is of vital importance for utilizing 2D layers into practical applications. Here, we report on the structural and transport properties of large-scale few-layer MoS2 back-gated field effect transistors (FETs), fabricated using conventional pulsed laser deposition (PLD) technique. Raman spectroscopy and transmission electron microscopy results confirmed that the obtained MoS2 layers on SiO2/Si substrate are multilayers. The FETs devices exhibit a relative high on/off ratio of 5 × 102 and mobility of 0.124 cm2V−1S−1. Our results suggest that the PLD would be a suitable pathway to grow 2D layers for future industrial device applications.

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Optimization of the pulsed laser deposition process of In2O3 thin films for ferroelectric field effect device applications

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-020-04935-x ◽

2021 ◽

Author(s):

Meng Xu ◽

Lei Guo ◽

Jian-Min Yan ◽

Zhi-Xue Xu ◽

Hui Wang ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Field Effect ◽

Pulsed Laser ◽

Deposition Process ◽

Laser Deposition ◽

Device Applications

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Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-243-495 ◽

1991 ◽

Vol 243 ◽

Cited By ~ 2

Author(s):

K. Nashimoto ◽

D. K. Fork ◽

F. A. Ponce ◽

T. H. Geballe

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Epitaxial Growth ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Buffer Layers ◽

Laser Deposition ◽

Hrtem Observation ◽

Device Applications ◽

Ferroelectric Hysteresis

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.

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