Development and utility of a new 3-D magnetron source for high rate deposition of highly conductive ITO thin films near room temperature

2018 ◽  
Vol 20 (7) ◽  
pp. 4818-4830 ◽  
Author(s):  
Long Wen ◽  
Bibhuti Bhusan Sahu ◽  
Jeon Geon Han
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
High Rate ◽  
High Quality ◽  
Low Temperature Deposition ◽  
Ito Thin Films ◽  
Temperature Deposition ◽  
Ito Films

This study reports the high rate and low-temperature deposition of high-quality ITO films using a new 3-D confined magnetron sputtering method.

scholarly journals ITO thin films prepared by DC magnetron sputtering method using ITO target. Preparation of ITO films on low temperature glass substrate.

Shinku ◽  
1989 ◽  
Vol 32 (3) ◽  
pp. 336-340
Author(s):  
Yoshiyuki TSUDA ◽  
Hideaki YASUI ◽  
Hidenobu SINTAKU ◽  
Hiroyoshi TANAKA ◽  
Masahide YOKOYAMA
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Glass Substrate ◽  
Dc Magnetron Sputtering ◽  
Target Preparation ◽  
Ito Thin Films ◽  
Ito Films

scholarly journals Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

2019 ◽  
Vol 10 ◽  
pp. 1511-1522 ◽  
Author(s):  
Petronela Prepelita ◽  
Ionel Stavarache ◽  
Doina Craciun ◽  
Florin Garoi ◽  
Catalin Negrila ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rapid Thermal Annealing ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray ◽  
Ito Thin Films ◽  
Ito Films

In this work, rapid thermal annealing (RTA) was applied to indium tin oxide (ITO) films in ambient atmosphere, resulting in significant improvements of the quality of the ITO films that are commonly used as conductive transparent electrodes for photovoltaic structures. Starting from a single sintered target (purity 99.95%), ITO thin films of predefined thickness (230 nm, 300 nm and 370 nm) were deposited at room temperature by radio-frequency magnetron sputtering (rfMS). After deposition, the films were subjected to a RTA process at 575 °C (heating rate 20 °C/s), maintained at this temperature for 10 minutes, then cooled down to room temperature at a rate of 20 °C/s. The film structure was modified by changing the deposition thickness or the RTA process. X-ray diffraction investigations revealed a cubic nanocrystalline structure for the as-deposited ITO films. After RTA, polycrystalline compounds with a textured (222) plane were observed. X-ray photon spectroscopy was used to confirm the beneficial effect of the RTA treatment on the ITO chemical composition. Using a Tauc plot, values of the optical band gap ranging from 3.17 to 3.67 eV were estimated. These values depend on the heat treatment and the thickness of the sample. Highly conductive indium tin oxide thin films (ρ = 7.4 × 10−5 Ω cm) were obtained after RTA treatment in an open atmosphere. Such films could be used to manufacture transparent contact electrodes for solar cells.

Low temperature deposition of ITO thin films by ion beam sputtering

2000 ◽  
Vol 377-378 ◽  
pp. 81-86 ◽  
Author(s):  
Donghwan Kim ◽  
Younggun Han ◽  
Jun-Sik Cho ◽  
Seok-Keun Koh
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Low Temperature Deposition ◽  
Beam Sputtering ◽  
Ito Thin Films ◽  
Temperature Deposition
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