Multi-wavelength excited white-emitting K2Gd(1−x)(PO4)(WO4):xDy3+ phosphors with satisfactory thermal properties for UV-LEDs

In this study, the thermal properties of a kind of new geotextile materials, so called controlled permeable formwork (CPF), were studied. Thermo-gravimetric analysis showed that the weight of CPF didn’t change much between 0~350 °C. Dynamic mechanical analysis showed that the storage modulus of CPF reduced from 25 MPa to around 10 MPa when the temperature rose to above 100 °C. The strength of sample decreased slightly with the increase of the temperature. The breaking elongation changed slightly with a maximum at 80 °C. The CPF showed excellent thermal stability and was suitable for general use in construction work.

Download Full-text

Search for a Suitable Ohmic Metallization Scheme to GaN/AlGaN Heterostructures for Sub-Micron Devices

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.159.81 ◽

2010 ◽

Vol 159 ◽

pp. 81-86 ◽

Cited By ~ 2

Author(s):

Lilyana Kolaklieva ◽

Roumen Kakanakov ◽

V. Chitanov ◽

Polina Dulgerova ◽

Volker Cimalla

Keyword(s):

Thermal Stability ◽

Thermal Properties ◽

Surface Morphology ◽

Barrier Layer ◽

Contact Structure ◽

Annealing Temperature ◽

Contact Resistivity ◽

Initial Composition ◽

Excellent Thermal Stability ◽

Au Film

Ohmic properties, thermal stability and surface morphology of Al-based and non-aluminium metallizations are investigated in dependence on the annealing temperature and initial composition. Non-aluminium contacts show poor ohmic properties, while contact resistivity of 3.47x10-5 Ω.cm2 is achieved for Ti/Al/Ti/Au metallization with a former-Ti/Al ratio of (30 wt.% /70 wt.%). Thermal properties of the Al-based metallization are improved by application of Mo layer as a barrier under the upper Au film of the contact structure. These contacts show excellent thermal stability at operating temperatures as high as 400oC. The less Al amount in the contact composition and Mo barrier layer contribute to the smoother surface and better edge acuity.

Download Full-text

Impact of Spherical Anatase TiO2 Nanoparticles on Thermal Properties of Polypropylene Resin

10.21203/rs.3.rs-654843/v1 ◽

2021 ◽

Author(s):

Ahlem Bendaoued ◽

Mouna Messaoud ◽

Omar Harzallah ◽

Sophie Bistac ◽

Rached Salhi

Keyword(s):

Thermal Stability ◽

Thermal Properties ◽

Sol Gel ◽

Thermal Characterization ◽

Degree Of Crystallinity ◽

Molar Ratio ◽

Excellent Thermal Stability ◽

Energy Applications ◽

Production Of Hydrogen ◽

Thermal Stability Of

Abstract Ceramics nanometric reinforced polymer composite is a significant material for catalysis, solar cells, production of hydrogen and energy applications, etc. In order to take benefit from the interesting mechanical properties and thermal stability of TiO2, these ceramic nanomaterials was synthesized by the Sol-Gel process in attempt to study the thermal stability, structure, and morphology of the resulting nanoparticles powders. The obtained results revealed that, the sphere is composed of 20-30 nm nanoparticles with excellent thermal stability of nano-TiO2. This work focused on the thermal characterization and the study of nanocomposite xWt. %TiO2/PP (x=0, 2.5, 5, 7.5 mol%). In this study, the obtained results revealed that the molar ratio of TiO2 influences the final thermal stability and degree of crystallinity of the composite. It was found that the use of TiO2 seems to be an effective and very promising way to increase the thermal properties of the resulting composite. The greatest degree of crystallinity (54.80%) and thermal degradation stability are obtained for composite reinforced by 7.5Wt. %TiO2.

Download Full-text

Tunable emission with excellent thermal stability in single-phased SrY2O4:Bi3+,Eu3+ phosphors for UV-LEDs

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2018.07.101 ◽

2018 ◽

Vol 767 ◽

pp. 403-408 ◽

Cited By ~ 24

Author(s):

Rongfei Wei ◽

Zhigang Zheng ◽

Yafei Shi ◽

Xiusha Peng ◽

Hui Wang ◽

...

Keyword(s):

Thermal Stability ◽

Excellent Thermal Stability ◽

Uv Leds ◽

Tunable Emission

Download Full-text

Self-promoted phthalimide-containing phthalonitrile resins with sluggish curing process and excellent thermal stability

RSC Advances ◽

10.1039/c4ra17306f ◽

2015 ◽

Vol 5 (21) ◽

pp. 16199-16206 ◽

Cited By ~ 47

Author(s):

Jianghuai Hu ◽

Yancui Liu ◽

Yan Jiao ◽

Suchun Ji ◽

Rui Sun ◽

...

Keyword(s):

Thermal Stability ◽

Thermal Properties ◽

Nucleophilic Addition ◽

Curing Process ◽

Excellent Thermal Stability

A novel unsymmetrical phthalimide-containing phthalonitrile was synthesized and showed excellent thermal properties. A nucleophilic addition mechanism was introduced to explain the different reactivities of active H-containing heterocyclic structures toward phthalonitrile.

Download Full-text

Facile preparation of a phenyl-reinforced flexible silica aerogel with excellent thermal stability and fire resistance

Materials Chemistry Frontiers ◽

10.1039/d1qm00206f ◽

2021 ◽

Author(s):

Yu Zhang ◽

Qianqian Shen ◽

Xuesha Li ◽

Lili Wang ◽

Chaoyin Nie

Keyword(s):

Thermal Stability ◽

Thermal Properties ◽

Fire Resistance ◽

Silica Aerogel ◽

Mechanical And Thermal Properties ◽

Excellent Thermal Stability ◽

Facile Preparation

A phenyl-reinforced flexible silica aerogel was synthesized using PTES as a reinforcer; the membrane-like structure derived from PTES improved the mechanical and thermal properties of the flexible silica aerogel.

Download Full-text

Formation and Characterization of Nanolayered Pd-Based Metal/p-4H SiC Systems with Ohmic Behaviour

Journal of Nano Research ◽

10.4028/www.scientific.net/jnanor.10.77 ◽

2010 ◽

Vol 10 ◽

pp. 77-85 ◽

Cited By ~ 3

Author(s):

Lilyana Kolaklieva ◽

Roumen Kakanakov ◽

Efstathios K. Polychroniadis ◽

Eleni Pavlidou ◽

Ioannis Tsiaousis ◽

...

Keyword(s):

Thermal Stability ◽

Surface Roughness ◽

Thermal Properties ◽

Structural Analysis ◽

Surface Morphology ◽

Barrier Height ◽

Contact Resistivity ◽

Excellent Thermal Stability

Three types of nanolayered Pd-based metal/p-4H SiC systems, Au/Pd, Au/Pd/Al and Au/Pd/Ti/Pd have been investigated and compared to Pd monolayered metallization regarding the electrical and thermal properties. The lowest contact resistivity of 2.8x10-5 .cm2 has been achieved with the Au/Pd/Ti/Pd contact. This contact exhibits excellent thermal stability during long-term heating at temperature of 700oC and at operating temperatures up to 450oC. The surface morphology investigation has shown that despite the observed decrease, the palladium agglomeration has been not avoided completely in the same contact. The dominated surface roughness was measured to be 75 nm. However, the formation of dendrites in certain places leads to increase the surface roughness to 125 nm. The structural analysis revealed that palladium silicides are formed at the interface metal/p-4H SiC which affects on decrease of the barrier height in more than two times and conversion of the contact from Schottky into ohmic.

Download Full-text

Microstructure studies of tungsten silicide schottky contacts on Gaas

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126445 ◽

1987 ◽

Vol 45 ◽

pp. 328-329

Author(s):

Yih-Cheng Shih ◽

E. L. Wilkie

Keyword(s):

Thermal Stability ◽

Field Effect Transistors ◽

Schottky Contact ◽

Schottky Contacts ◽

Excellent Thermal Stability ◽

Barrier Heights ◽

Gaas Substrates ◽

Film Adhesion ◽

Threshold Voltages ◽

Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Download Full-text

Boosted piezoelectricity with excellent thermal stability in tetragonal NaNbO3-based ceramics

Journal of Materials Chemistry A ◽

10.1039/d0ta10470a ◽

2020 ◽

Author(s):

Lu Wang ◽

Shengdong Sun ◽

Huajie Luo ◽

Yang Ren ◽

Hui Liu ◽

...

Keyword(s):

Thermal Stability ◽

Temperature Stability ◽

Lead Free ◽

Excellent Thermal Stability ◽

Lead Free Ceramics ◽

Piezoelectric Performance

The realization of high piezoelectric performance and excellent temperature stability simultaneously in lead-free ceramics is the key for replacing Pb-containing perovskites in industry. In this study, large piezoelectric performance (d33...

Download Full-text