Local crystal structure and mechanical properties of sputtered Ti-doped AlN thin films

2018 ◽  
Vol 20 (47) ◽  
pp. 29817-29825 ◽  
Author(s):  
Padmalochan Panda ◽  
Nanda Gopala Krishna ◽  
Parasmani Rajput ◽  
R. Ramaseshan

In this article, we predominantly report the investigation of the local crystal structure around a Ti dopant by X-ray absorption spectroscopy (XAS) and the nano-mechanical properties of co-sputtered Al1−xTixN (x = 0 to 4%) thin films.


2018 ◽  
Vol 20 (18) ◽  
pp. 13084-13091 ◽  
Author(s):  
Padmalochan Panda ◽  
R. Ramaseshan ◽  
Madhusmita Sahoo ◽  
Nanda Gopala Krishna ◽  
A. K. Yadav ◽  
...  

This article reports the detailed X-ray absorption spectroscopy (XAS) study of Al1−xCrxN (x = 4, 6, 11%) thin films synthesized by the reactive magnetron co-sputtering technique.



2020 ◽  
Vol 128 (6) ◽  
pp. 065303
Author(s):  
Krishna Kumar ◽  
Shi-Chen Wu ◽  
Yueh-Chung Yu ◽  
Da-Hua Wei ◽  
Jau-Wern Chiou


2014 ◽  
Vol 104 (24) ◽  
pp. 242113 ◽  
Author(s):  
Sin Cheng Siah ◽  
Sang Woon Lee ◽  
Yun Seog Lee ◽  
Jaeyeong Heo ◽  
Tomohiro Shibata ◽  
...  


2015 ◽  
Vol 119 (8) ◽  
pp. 4362-4370 ◽  
Author(s):  
D. Carta ◽  
G. Mountjoy ◽  
A. Regoutz ◽  
A. Khiat ◽  
A. Serb ◽  
...  


2014 ◽  
Vol 49 (2) ◽  
pp. 897-905 ◽  
Author(s):  
R. Sekine ◽  
G. Brunetti ◽  
E. Donner ◽  
M. Khaksar ◽  
K. Vasilev ◽  
...  


2021 ◽  
Vol 28 (6) ◽  
Author(s):  
Noritake Isomura ◽  
Keiichiro Oh-ishi ◽  
Naoko Takahashi ◽  
Satoru Kosaka

Thin films formed on surfaces have a large impact on the properties of materials and devices. In this study, a method is proposed using X-ray absorption spectroscopy to derive the film thickness of a thin film formed on a substrate using the spectral separation and logarithmic equation, which is a modified version of the formula used in electron spectroscopy. In the equation, the decay length in X-ray absorption spectroscopy is longer than in electron spectroscopy due to a cascade of inelastic scattering of electrons generated in a solid. The modification factor, representing a multiple of the decay length, was experimentally determined using oxidized Si and Cu with films of thickness 19 nm and 39 nm, respectively. The validity of the proposed method was verified, and the results indicated that the method can be used in the analysis of various materials with thin films.





2019 ◽  
Vol 240 (1) ◽  
Author(s):  
Mukul Gupta ◽  
Nidhi Pandey ◽  
Niti ◽  
V. R. Reddy ◽  
D. M. Phase ◽  
...  




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