Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition

Controlled doping of the p-type 2D material tungsten diselenide, done with niobium substitution for tungsten on the crystal lattice, can tune 2D transistor characteristics.

Download Full-text

Correction: Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition

Nanoscale ◽

10.1039/c8nr90273a ◽

2019 ◽

Vol 11 (1) ◽

pp. 365-365

Author(s):

Sushil Kumar Pandey ◽

Hussain Alsalman ◽

Javad G. Azadani ◽

Nezhueyotl Izquierdo ◽

Tony Low ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Large Area ◽

Substitutional Doping ◽

P Type

Correction for ‘Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition’ by Stephen A. Campbell et al., Nanoscale, 2018, 10, 21374–21385.

Download Full-text

p-Type transition-metal doping of large-area MoS2thin films grown by chemical vapor deposition

Nanoscale ◽

10.1039/c6nr09495c ◽

2017 ◽

Vol 9 (10) ◽

pp. 3576-3584 ◽

Cited By ~ 39

Author(s):

E. Z. Xu ◽

H. M. Liu ◽

K. Park ◽

Z. Li ◽

Y. Losovyj ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Transition Metal ◽

Vapor Deposition ◽

Chemical Vapor ◽

Transition Metal Doping ◽

Large Area ◽

Metal Doping ◽

Type Transition ◽

P Type

Download Full-text

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition

ACS Applied Materials & Interfaces ◽

10.1021/acsami.9b19864 ◽

2020 ◽

Vol 12 (5) ◽

pp. 6276-6282 ◽

Cited By ~ 12

Author(s):

Mengge Li ◽

Jiadong Yao ◽

Xiaoxiang Wu ◽

Shucheng Zhang ◽

Boran Xing ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Monolayer Mos2 ◽

Large Area ◽

P Type

Download Full-text

Boron Doped p-type Hydrogenated Nanocrystalline Silicon Films Grown by Hot Wire Chemical Vapor Deposition

10.1063/1.3643596 ◽

2011 ◽

Cited By ~ 1

Author(s):

M. R. Pramod ◽

M. M. Kamble ◽

V. S. Waman ◽

A. M. Funde ◽

V. G. Sathe ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Nanocrystalline Silicon ◽

Silicon Films ◽

Hot Wire ◽

Boron Doped ◽

P Type ◽

Nanocrystalline Silicon Films

Download Full-text

Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

Nanoscale Research Letters ◽

10.1186/s11671-021-03505-2 ◽

2021 ◽

Vol 16 (1) ◽

Author(s):

Zhenzhen Tian ◽

Xiaoming Yuan ◽

Ziran Zhang ◽

Wuao Jia ◽

Jian Zhou ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Driving Force ◽

Chemical Vapor ◽

Chemical Vapor Deposition Method ◽

Nanowire Growth ◽

Calphad Approach ◽

Deposition Method ◽

Large Area ◽

Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

Download Full-text