Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering

Indium-tin-zinc-oxide (ITZO) as the channel layer grown by co-sputtering of ZnO target and ITO target in the bottom gate thin-film transistors (TFTs) is proposed in this work.

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Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽

10.1039/d1nr02911h ◽

2021 ◽

Author(s):

Keonwon Beom ◽

Jimin Han ◽

Hyun-Mi Kim ◽

Tae-Sik Yoon

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Hafnium Oxide ◽

Synaptic Weight ◽

Drain Current ◽

Gate Insulator ◽

Channel Layer ◽

Indium Zinc Oxide ◽

Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

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Bottom-Gate Thin-Film Transistors Based on GaN Active Channel Layer

IEEE Electron Device Letters ◽

10.1109/led.2013.2244556 ◽

2013 ◽

Vol 34 (4) ◽

pp. 517-519 ◽

Cited By ~ 5

Author(s):

Rongsheng Chen ◽

Wei Zhou ◽

Meng Zhang ◽

Hoi Sing Kwok

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Channel Layer ◽

Active Channel ◽

Bottom Gate

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Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2018.15596 ◽

2018 ◽

Vol 18 (9) ◽

pp. 5913-5918 ◽

Cited By ~ 2

Author(s):

Kiwon Lim ◽

Pyungho Choi ◽

Sangsub Kim ◽

Hyunki Kim ◽

Minsoo Kim ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Tin Oxide ◽

Thin Film Transistors ◽

Channel Layer ◽

Indium Zinc Oxide ◽

Zinc Tin Oxide

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High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric

Materials ◽

10.3390/ma12060852 ◽

2019 ◽

Vol 12 (6) ◽

pp. 852 ◽

Cited By ~ 6

Author(s):

Seungbeom Choi ◽

Kyung-Tae Kim ◽

Sung Park ◽

Yong-Hoon Kim

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Gate Dielectric ◽

High Mobility ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Linear Type ◽

Channel Layer ◽

Indium Gallium

In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.

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Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure

Materials ◽

10.3390/ma12213639 ◽

2019 ◽

Vol 12 (21) ◽

pp. 3639 ◽

Cited By ~ 2

Author(s):

Cheng-Jyun Wang ◽

Hsin-Chiang You ◽

Kuan Lin ◽

Jen-Hung Ou ◽

Keng-Hsien Chao ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Visible Light ◽

Surface Plasmon ◽

Thin Film Transistors ◽

Lower Surface ◽

Electrical Signal ◽

Oxide Thin Film ◽

Localized Surface Plasmon ◽

Channel Layer

Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm away. Finally, a ZnO and Au-NP heterojunction nanohybrid structure using plasmonic energy detection as an electrical signal, constitutes an ideal combination for a visible-light photodetector. The ZnO-based TFTs convert localized surface plasmon energy into an electrical signal, thereby extending the wide band-gap of materials used for photodetectors to achieve visible-light wavelength detection. The photo-transistors demonstrate an elevated on-current with an increase of the AuNP density in the concentration of 1.26, 12.6, and 126 pM and reach values of 3.75, 5.18, and 9.79 × 10−7 A with applied gate and drain voltages. Moreover, the threshold voltage (Vth) also drifts to negative values as the AuNP density increases.

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