Designing high-performance n-type Mg3Sb2-based thermoelectric materials through forming solid solutions and biaxial strain

2018 ◽  
Vol 6 (41) ◽  
pp. 20454-20462 ◽  
Author(s):  
Juan Li ◽  
Shuai Zhang ◽  
Boyi Wang ◽  
Shichao Liu ◽  
Luo Yue ◽  
...  
Keyword(s):  
Solid Solutions ◽  
Thermoelectric Materials ◽  
High Performance ◽  
Thermoelectric Performance ◽  
Biaxial Strain

Thermoelectric performance can be largely enhanced by forming solid solutions and biaxial strain.

Nanostructure controlled construction of high-performance thermoelectric materials of polymers and their composites

2018 ◽  
Vol 6 (45) ◽  
pp. 22381-22390 ◽  
Author(s):  
Yufeng Xue ◽  
Chunmei Gao ◽  
Lirong Liang ◽  
Xin Wang ◽  
Guangming Chen
Keyword(s):  
Thermoelectric Materials ◽  
High Performance ◽  
Thermoelectric Performance ◽  
Recent Advances

This review discusses recent advances in controlled fabrication of nanostructures and the enhanced thermoelectric performance of polymers and their composites.

High thermoelectric performance in low-cost SnS0.91Se0.09 crystals

Science ◽  
2019 ◽  
Vol 365 (6460) ◽  
pp. 1418-1424 ◽  
Author(s):  
Wenke He ◽  
Dongyang Wang ◽  
Haijun Wu ◽  
Yu Xiao ◽  
Yang Zhang ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
High Performance ◽  
Carrier Mobility ◽  
Figure Of Merit ◽  
Toxic Elements ◽  
Low Cost ◽  
Thermoelectric Performance ◽  
Tin Sulfide ◽  
Temperature Dependent ◽  
Earth Abundant

Thermoelectric technology allows conversion between heat and electricity. Many good thermoelectric materials contain rare or toxic elements, so developing low-cost and high-performance thermoelectric materials is warranted. Here, we report the temperature-dependent interplay of three separate electronic bands in hole-doped tin sulfide (SnS) crystals. This behavior leads to synergistic optimization between effective mass (m*) and carrier mobility (μ) and can be boosted through introducing selenium (Se). This enhanced the power factor from ~30 to ~53 microwatts per centimeter per square kelvin (μW cm−1 K−2 at 300 K), while lowering the thermal conductivity after Se alloying. As a result, we obtained a maximum figure of merit ZT (ZTmax) of ~1.6 at 873 K and an average ZT (ZTave) of ~1.25 at 300 to 873 K in SnS0.91Se0.09 crystals. Our strategy for band manipulation offers a different route for optimizing thermoelectric performance. The high-performance SnS crystals represent an important step toward low-cost, Earth-abundant, and environmentally friendly thermoelectrics.

Electrical and thermal transport properties of Pb1−xSnxSe solid solution thermoelectric materials

2015 ◽  
Vol 17 (19) ◽  
pp. 13006-13012 ◽  
Author(s):  
Chao-Feng Wu ◽  
Tian-Ran Wei ◽  
Jing-Feng Li
Keyword(s):  
Solid Solution ◽  
Transport Properties ◽  
Solid Solutions ◽  
Thermoelectric Materials ◽  
Thermal Transport ◽  
Thermoelectric Performance ◽  
Substitution Effects ◽  
Thermal Transport Properties ◽  
Sn Substitution

Semiconducting characteristics of Pb1−xSnxSe solid solutions were investigated to reveal the Sn substitution effects on thermoelectric performance.

WSe2 nanoribbons: new high-performance thermoelectric materials

2016 ◽  
Vol 18 (24) ◽  
pp. 16337-16344 ◽  
Author(s):  
Kai-Xuan Chen ◽  
Zhi-Yong Luo ◽  
Dong-Chuan Mo ◽  
Shu-Shen Lyu
Keyword(s):  
Thermoelectric Materials ◽  
High Performance ◽  
Thermoelectric Performance

Armchair WSe2 nanoribbon structures are predicted to exhibit outstanding thermoelectric performance, mainly attributed to the ribbon edge disorder.

Intrinsic lamellar defects containing atomic Cu in Cu2X (X=S, Se) thermoelectric materials

2021 ◽  
Author(s):  
Yuyu Wei ◽  
Ping Lu ◽  
Chenxi Zhu ◽  
Kunpeng Zhao ◽  
Xiaoyue Lu ◽  
...  
Keyword(s):  
Solid Solutions ◽  
Thermoelectric Materials ◽  
Thermoelectric Performance ◽  
Copper Metal ◽  
Bulk Surface ◽  
Binary Compounds ◽  
Poor Stability

As liquid-like materials, Cu2X (X=S, Se) binary compounds and their solid solutions possess excellent thermoelectric performance but poor stability. Precipitation of copper metal onto the bulk surface under electric or...

Enhancement of thermoelectric performance via weak disordering of topological crystalline insulators and band convergence by Se alloying in Pb0.5Sn0.5Te1 − xSex

2018 ◽  
Vol 6 (14) ◽  
pp. 5870-5879 ◽  
Author(s):  
Dianta Ginting ◽  
Chan-Chieh Lin ◽  
Gareoung Kim ◽  
Jae Hyun Yun ◽  
Byung-Kyu Yu ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
High Performance ◽  
Thermoelectric Performance ◽  
New Strategy ◽  
Dirac Semimetals ◽  
Topological Crystalline Insulators

This research proposes a new strategy for exploring high-performance thermoelectric materials by weak disordering of topological crystalline Dirac semimetals.

scholarly journals Electronic and Thermoelectric Properties of V2O5, MgV2O5, and CaV2O5

Coatings ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 453 ◽  
Author(s):  
Xiaofei Sheng ◽  
Zhuhong Li ◽  
Yajuan Cheng
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
High Performance ◽  
Van Der Waals ◽  
Thermoelectric Performance ◽  
Extreme Condition ◽  
Electronic Band ◽  
Classical Transport

Developing new thermoelectric materials with high performance can broaden the thermoelectric family and is the key to fulfill extreme condition applications. In this work, we proposed two new high-temperature thermoelectric materials—MgV2O5 and CaV2O5—which are derived from the interface engineered V2O5. The electronic and thermoelectric properties of V2O5, MgV2O5, and CaV2O5 were calculated based on first principles and Boltzmann semi-classical transport equations. It was found that although V2O5 possessed a large Seebeck coefficient, its large band gap strongly limited the electrical conductivity, hence hindering it from being good thermoelectric material. With the intercalation of Mg and Ca atoms into the van der Waals interfaces of V2O5, i.e., forming MgV2O5 and CaV2O5, the electronic band gaps could be dramatically reduced down to below 0.1 eV, which is beneficial for electrical conductivity. In MgV2O5 and CaV2O5, the Seebeck coefficient was not largely affected compared to V2O5. Consequently, the thermoelectric figure of merit was expected to be improved noticeably. Moreover, the intercalation of Mg and Ca atoms into the V2O5 van der Waals interfaces enhanced the anisotropic transport and thus provided a possible way for further engineering of their thermoelectric performance by nanostructuring. Our work provided theoretical guidelines for the improvement of thermoelectric performance in layered oxide materials.

Toward high thermoelectric performance p-type FeSb2.2Te0.8via in situ formation of InSb nanoinclusions

2015 ◽  
Vol 3 (32) ◽  
pp. 8372-8380 ◽  
Author(s):  
Gangjian Tan ◽  
Hang Chi ◽  
Wei Liu ◽  
Yun Zheng ◽  
Xinfeng Tang ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Thermoelectric Materials ◽  
High Performance ◽  
Thermoelectric Performance ◽  
Electron Channel ◽  
Mobility Degradation ◽  
In Situ Formation ◽  
P Type

The InSb nanoinclusions formed in situ at the grain boundaries of FeSb2.2Te0.8 mitigates the mobility degradation while the added grain boundaries effectively scatter heat-carrying phonons. This novel “electron-channel phonon-barrier” nanocompositing approach opens a new route to design high performance thermoelectric materials.

scholarly journals High Thermoelectric Performance of Cu-Doped PbSe-PbS System Enabled by High-Throughput Experimental Screening

Research ◽  
2020 ◽  
Vol 2020 ◽  
pp. 1-8
Author(s):  
Li You ◽  
Zhili Li ◽  
Quanying Ma ◽  
Shiyang He ◽  
Qidong Zhang ◽  
...  
Keyword(s):  
Experimental Technique ◽  
High Throughput ◽  
Thermoelectric Materials ◽  
High Performance ◽  
Large Scale ◽  
Transport Model ◽  
Thermoelectric Performance ◽  
Trial And Error ◽  
Lead Chalcogenides ◽  
Experimental Discovery

Recent advances in high-throughput (HTP) computational power and machine learning have led to great achievements in exploration of new thermoelectric materials. However, experimental discovery and optimization of thermoelectric materials have long relied on the traditional Edisonian trial and error approach. Herein, we demonstrate that ultrahigh thermoelectric performance in a Cu-doped PbSe-PbS system can be realized by HTP experimental screening and precise property modulation. Combining the HTP experimental technique with transport model analysis, an optimal Se/S ratio showing high thermoelectric performance has been efficiently screened out. Subsequently, based on the screened Se/S ratio, the doping content of Cu has been subtly adjusted to reach the optimum carrier concentration. As a result, an outstanding peak zT~1.6 is achieved at 873 K for a 1.8 at% Cu-doped PbSe0.6S0.4 sample, which is the superior value among the n-type Te-free lead chalcogenides. We anticipate that current work will stimulate large-scale unitization of the HTP experimental technique in the thermoelectric field, which can greatly accelerate the research and development of new high-performance thermoelectric materials.

Tuning SnSe/SnS hetero-interfaces to enhance thermoelectric performance

2018 ◽  
Vol 11 (04) ◽  
pp. 1850069 ◽  
Author(s):  
Xuerui Liu ◽  
Shuankui Li ◽  
Tinyang Liu ◽  
Weiming Zhu ◽  
Rui Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Materials ◽  
High Performance ◽  
Multiple Scales ◽  
Phonon Transport ◽  
Thermoelectric Performance ◽  
Energy Filtering ◽  
Promising Strategy ◽  
Filtering Effect ◽  
Heterogeneous Nanostructure

With the development of nanotechnology, thermoelectric materials with complex heterogeneous nanostructure offer a promising approach to improve the thermoelectric performance. In this work, SnSe/SnS hetero-nanosheet was tuned by the epitaxial growth of SnSe on the few layers of SnS nanosheets. The heterojunction interface can optimize the carrier/phonon transport behavior by energy filtering effect and scattering the phonon in multiple scales. Compared with pristine SnSe, the power factor of SnSe/SnS hetero-nanosheet increases from 2.2[Formula: see text][Formula: see text]V/cmK2 to 3.21[Formula: see text][Formula: see text]V/cmK2 at 773[Formula: see text]K, whereas the thermal conductivity decreases significantly from 0.65[Formula: see text]W[Formula: see text][Formula: see text][Formula: see text]m[Formula: see text] to 0.48[Formula: see text]W[Formula: see text][Formula: see text][Formula: see text]m[Formula: see text] at 773[Formula: see text]K. The maximum ZT of 0.5 is obtained at 773[Formula: see text]K in the SnSe/SnS hetero-nanosheets, which is 89% higher than pristine SnSe. This approach is proved to be a promising strategy to design high performance thermoelectric materials.

Sign in / Sign up

Export Citation Format

Share Document