Bifacial passivation of n-silicon metal–insulator–semiconductor photoelectrodes for efficient oxygen and hydrogen evolution reactions

2020 ◽  
Vol 13 (1) ◽  
pp. 221-228 ◽  
Author(s):  
Bin Liu ◽  
Shijia Feng ◽  
Lifei Yang ◽  
Chengcheng Li ◽  
Zhibin Luo ◽  
...  
Keyword(s):  
Hydrogen Evolution ◽  
Water Oxidation ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Hydrogen Evolution Reactions

This paper describes a bifacial passivation strategy for the metal/Si interface of metal–insulator–semiconductor (MIS) photoelectrodes, achieving record high activities for water oxidation and reduction for Si-based MIS electrodes.

scholarly journals Scalable, highly stable Si-based metal-insulator-semiconductor photoanodes for water oxidation fabricated using thin-film reactions and electrodeposition

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Soonil Lee ◽  
Li Ji ◽  
Alex C. De Palma ◽  
Edward T. Yu
Keyword(s):  
Thin Film ◽  
Current Density ◽  
Water Oxidation ◽  
Metal Catalyst ◽  
Saturation Current ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Onset Potential ◽  
Solar Water Splitting ◽  
Saturation Current Density

AbstractMetal-insulator-semiconductor (MIS) structures are widely used in Si-based solar water-splitting photoelectrodes to protect the Si layer from corrosion. Typically, there is a tradeoff between efficiency and stability when optimizing insulator thickness. Moreover, lithographic patterning is often required for fabricating MIS photoelectrodes. In this study, we demonstrate improved Si-based MIS photoanodes with thick insulating layers fabricated using thin-film reactions to create localized conduction paths through the insulator and electrodeposition to form metal catalyst islands. These fabrication approaches are low-cost and highly scalable, and yield MIS photoanodes with low onset potential, high saturation current density, and excellent stability. By combining this approach with a p+n-Si buried junction, further improved oxygen evolution reaction (OER) performance is achieved with an onset potential of 0.7 V versus reversible hydrogen electrode (RHE) and saturation current density of 32 mA/cm2 under simulated AM1.5G illumination. Moreover, in stability testing in 1 M KOH aqueous solution, a constant photocurrent density of ~22 mA/cm2 is maintained at 1.3 V versus RHE for 7 days.

Si-Based Metal–Insulator–Semiconductor Structures with RuO2–(IrO2) Films for Photoelectrochemical Water Oxidation

2021 ◽  
Author(s):  
Prangya P. Sahoo ◽  
Miroslav Mikolášek ◽  
Kristína Hušeková ◽  
Edmund Dobročka ◽  
Ján Šoltýs ◽  
...  
Keyword(s):  
Water Oxidation ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Photoelectrochemical Water Oxidation

An electrodeposited inhomogeneous metal–insulator–semiconductor junction for efficient photoelectrochemical water oxidation

2015 ◽  
Vol 14 (11) ◽  
pp. 1150-1155 ◽  
Author(s):  
James C. Hill ◽  
Alan T. Landers ◽  
Jay A. Switzer
Keyword(s):  
Water Oxidation ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Junction ◽  
Photoelectrochemical Water Oxidation

scholarly journals Interfacial engineering of metal-insulator-semiconductor junctions for efficient and stable photoelectrochemical water oxidation

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Ibadillah A. Digdaya ◽  
Gede W. P. Adhyaksa ◽  
Bartek J. Trześniewski ◽  
Erik C. Garnett ◽  
Wilson A. Smith
Keyword(s):  
Water Oxidation ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Interfacial Engineering ◽  
Photoelectrochemical Water Oxidation

A Study of the Potentiality of Inkjet-Printing Technique for the Fabrication of Metal-Insulator-Semiconductor Organic Rectifying Diodes

2018 ◽  
Vol 2018 (1) ◽  
pp. 5-9
Author(s):  
Silvia Conti ◽  
Carme Martinez-Domingo ◽  
Lluís Terés ◽  
Eloi Ramon
Keyword(s):  
Inkjet Printing ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Printing Technique

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

Sign in / Sign up

Export Citation Format

Share Document