An electrodeposited inhomogeneous metal–insulator–semiconductor junction for efficient photoelectrochemical water oxidation

2015 ◽  
Vol 14 (11) ◽  
pp. 1150-1155 ◽  
Author(s):  
James C. Hill ◽  
Alan T. Landers ◽  
Jay A. Switzer
Keyword(s):  
Water Oxidation ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Junction ◽  
Photoelectrochemical Water Oxidation

Si-Based Metal–Insulator–Semiconductor Structures with RuO2–(IrO2) Films for Photoelectrochemical Water Oxidation

2021 ◽  
Author(s):  
Prangya P. Sahoo ◽  
Miroslav Mikolášek ◽  
Kristína Hušeková ◽  
Edmund Dobročka ◽  
Ján Šoltýs ◽  
...  
Keyword(s):  
Water Oxidation ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Photoelectrochemical Water Oxidation

scholarly journals Interfacial engineering of metal-insulator-semiconductor junctions for efficient and stable photoelectrochemical water oxidation

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Ibadillah A. Digdaya ◽  
Gede W. P. Adhyaksa ◽  
Bartek J. Trześniewski ◽  
Erik C. Garnett ◽  
Wilson A. Smith
Keyword(s):  
Water Oxidation ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Interfacial Engineering ◽  
Photoelectrochemical Water Oxidation

Bifacial passivation of n-silicon metal–insulator–semiconductor photoelectrodes for efficient oxygen and hydrogen evolution reactions

2020 ◽  
Vol 13 (1) ◽  
pp. 221-228 ◽  
Author(s):  
Bin Liu ◽  
Shijia Feng ◽  
Lifei Yang ◽  
Chengcheng Li ◽  
Zhibin Luo ◽  
...  
Keyword(s):  
Hydrogen Evolution ◽  
Water Oxidation ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Hydrogen Evolution Reactions

This paper describes a bifacial passivation strategy for the metal/Si interface of metal–insulator–semiconductor (MIS) photoelectrodes, achieving record high activities for water oxidation and reduction for Si-based MIS electrodes.

scholarly journals Scalable, highly stable Si-based metal-insulator-semiconductor photoanodes for water oxidation fabricated using thin-film reactions and electrodeposition

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Soonil Lee ◽  
Li Ji ◽  
Alex C. De Palma ◽  
Edward T. Yu
Keyword(s):  
Thin Film ◽  
Current Density ◽  
Water Oxidation ◽  
Metal Catalyst ◽  
Saturation Current ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Onset Potential ◽  
Solar Water Splitting ◽  
Saturation Current Density

AbstractMetal-insulator-semiconductor (MIS) structures are widely used in Si-based solar water-splitting photoelectrodes to protect the Si layer from corrosion. Typically, there is a tradeoff between efficiency and stability when optimizing insulator thickness. Moreover, lithographic patterning is often required for fabricating MIS photoelectrodes. In this study, we demonstrate improved Si-based MIS photoanodes with thick insulating layers fabricated using thin-film reactions to create localized conduction paths through the insulator and electrodeposition to form metal catalyst islands. These fabrication approaches are low-cost and highly scalable, and yield MIS photoanodes with low onset potential, high saturation current density, and excellent stability. By combining this approach with a p+n-Si buried junction, further improved oxygen evolution reaction (OER) performance is achieved with an onset potential of 0.7 V versus reversible hydrogen electrode (RHE) and saturation current density of 32 mA/cm2 under simulated AM1.5G illumination. Moreover, in stability testing in 1 M KOH aqueous solution, a constant photocurrent density of ~22 mA/cm2 is maintained at 1.3 V versus RHE for 7 days.

Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment

2020 ◽  
Vol 117 (5) ◽  
pp. 052105
Author(s):  
Chen Yang ◽  
Houqiang Fu ◽  
Po-Yi Su ◽  
Hanxiao Liu ◽  
Kai Fu ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Junction

Current transport properties of (Au/Ni)/HfAlO3/n-Si metal–insulator–semiconductor junction

2021 ◽  
Vol 148 ◽  
pp. 109758
Author(s):  
Engin Arslan ◽  
Yosef Badali ◽  
Majid Aalizadeh ◽  
Şemsettin Altındal ◽  
Ekmel Özbay
Keyword(s):  
Transport Properties ◽  
Current Transport ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Junction

scholarly journals Development and characterisation of photoelectrochemical MIS structures with RuO2/TiO2 gate stacs for water oxidation

2021 ◽  
Vol 72 (3) ◽  
pp. 203-207
Author(s):  
Miroslav Mikolášek ◽  
Karol Fröhlich ◽  
Kristína Hušeková ◽  
Peter Ondrejka ◽  
Filip Chymo ◽  
...  
Keyword(s):  
Catalytic Activity ◽  
Water Oxidation ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Insulator ◽  
Chemical Vapor Deposited ◽  
Metal Organic ◽  
Protection Layer ◽  
Photoelectrochemical Water Oxidation ◽  
Mis Structures

Abstract This paper is dedicated to preparation and analysis of metal insulator semiconductor (MIS) photoanode with a metal organic chemical vapor deposited RuO2 layer and TiO2 protection layer for photoelectrochemical water splitting. It is shown that utilization of TiO2 layers of 2, 4, and 6 nm thickness preserve the catalytic activity of underlying RuO2. The origin of increased overpotential and decreased photovoltage of the photoanode upon the increase of TiO2 layer thickness is discussed in the paper. Results revealed that utilization of TiO2 layer in the MIS concept is suitable for photoelectrochemical water oxidation applications.

Electrochemical and photoelectrochemical water splitting with a CoOx catalyst prepared by flame assisted deposition

2020 ◽  
Vol 49 (3) ◽  
pp. 588-592 ◽  
Author(s):  
Fusheng Li ◽  
Ziqi Zhao ◽  
Hao Yang ◽  
Dinghua Zhou ◽  
Yilong Zhao ◽  
...  
Keyword(s):  
Cobalt Oxide ◽  
Water Splitting ◽  
Water Oxidation ◽  
Oxide Catalyst ◽  
Photoelectrochemical Water Splitting ◽  
Deposition Method ◽  
Photoelectrochemical Water Oxidation

A cobalt oxide catalyst prepared by a flame-assisted deposition method on the surface of FTO and hematite for electrochemical and photoelectrochemical water oxidation, respectively.

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