Secondary ion mass spectrometry investigation of carbon grain formation in boron nitride epitaxial layers with atomic depth resolution

Paweł Piotr Michałowski; Piotr Caban; Jacek Baranowski

doi:10.1039/c9ja00004f

Secondary ion mass spectrometry investigation of carbon grain formation in boron nitride epitaxial layers with atomic depth resolution

Journal of Analytical Atomic Spectrometry ◽

10.1039/c9ja00004f ◽

2019 ◽

Vol 34 (5) ◽

pp. 848-853 ◽

Cited By ~ 5

Author(s):

Paweł Piotr Michałowski ◽

Piotr Caban ◽

Jacek Baranowski

Keyword(s):

Mass Spectrometry ◽

Boron Nitride ◽

Secondary Ion Mass Spectrometry ◽

Van Der Waals ◽

Depth Resolution ◽

Atomic Resolution ◽

Epitaxial Layers ◽

Grain Formation ◽

Secondary Ion

A refined SIMS procedure allows reaching atomic resolution and characterization of each layer in van der Waals structures separately.

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New Deconvolution Technique to Improve the Depth Resolution in Secondary Ion Mass Spectrometry

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.11(2).02021 ◽

2019 ◽

Vol 11 (2) ◽

pp. 02021-1-02021-5

Author(s):

N. Dahraoui ◽

◽

M. Boulakroune ◽

D. Benatia ◽

◽

...

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Depth Resolution ◽

Deconvolution Technique ◽

Ion Mass Spectrometry ◽

Secondary Ion

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Detection of Au+ Ions During Fluorine Gas-Assisted Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) for the Complete Elemental Characterization of Microbatteries

ACS Applied Materials & Interfaces ◽

10.1021/acsami.1c10352 ◽

2021 ◽

Vol 13 (34) ◽

pp. 41262-41274

Author(s):

Agnieszka Priebe ◽

Jordi Sastre ◽

Moritz H. Futscher ◽

Jakub Jurczyk ◽

Marcos V. Puydinger dos Santos ◽

...

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Tof Sims ◽

Ion Mass Spectrometry ◽

Secondary Ion ◽

Elemental Characterization

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Forensic Characterization of Lipsticks Using Time-of-Flight Secondary Ion Mass Spectrometry

Journal of Analytical Chemistry ◽

10.1134/s1061934821070091 ◽

2021 ◽

Vol 76 (7) ◽

pp. 854-867

Author(s):

Jihye Lee ◽

Yeonhee Lee

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Ion Mass Spectrometry ◽

Secondary Ion

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Significant improvement in depth resolution of Cr/Ni interfaces by secondary ion mass spectrometry profiling under normal O2+ion bombardment

Applied Physics Letters ◽

10.1063/1.107397 ◽

1992 ◽

Vol 60 (10) ◽

pp. 1178-1180 ◽

Cited By ~ 23

Author(s):

Kyung Joong Kim ◽

Dae Won Moon

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Depth Resolution ◽

Ion Bombardment ◽

Ion Mass Spectrometry ◽

Secondary Ion

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Secondary ion mass spectrometry (SIMS) applications on characterization of RF NPN bipolar polysilicon emitter process

10.1063/1.52570 ◽

1997 ◽

Cited By ~ 2

Author(s):

S. Lu

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Ion Mass Spectrometry ◽

Polysilicon Emitter ◽

Secondary Ion

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Characterization of sequentially grafted polysaccharide coatings using time-of-flight secondary ion mass spectrometry (ToF-SIMS) and principal component analysis (PCA)

Surface and Interface Analysis ◽

10.1002/sia.1446 ◽

2002 ◽

Vol 33 (12) ◽

pp. 924-931 ◽

Cited By ~ 13

Author(s):

Sally L. McArthur ◽

Matthew S. Wagner ◽

Patrick G. Hartley ◽

Keith M. McLean ◽

Hans J. Griesser ◽

...

Keyword(s):

Mass Spectrometry ◽

Principal Component Analysis ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Principal Component ◽

Component Analysis ◽

Tof Sims ◽

Ion Mass Spectrometry ◽

Secondary Ion

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Characterization of S-glass/polysulfone adhesive failure using ion scattering spectroscopy and secondary ion mass spectrometry

Journal of Colloid and Interface Science ◽

10.1016/0021-9797(80)90178-2 ◽

1980 ◽

Vol 74 (1) ◽

pp. 150-162 ◽

Cited By ~ 26

Author(s):

Anthony T Dibenedetto ◽

Daniel A Scola

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Adhesive Failure ◽

Ion Scattering ◽

Ion Scattering Spectroscopy ◽

Ion Mass Spectrometry ◽

Secondary Ion

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Characterization of the superlattice region of a quantum cascade laser by secondary ion mass spectrometry

Nanoscale ◽

10.1039/c7nr06401b ◽

2017 ◽

Vol 9 (44) ◽

pp. 17571-17575 ◽

Cited By ~ 8

Author(s):

Paweł Piotr Michałowski ◽

Piotr Gutowski ◽

Dorota Pierścińska ◽

Kamil Pierściński ◽

Maciej Bugajski ◽

...

Keyword(s):

Mass Spectrometry ◽

Quantum Cascade Laser ◽

Secondary Ion Mass Spectrometry ◽

Quantum Cascade ◽

Oxygen Contamination ◽

Ion Mass Spectrometry ◽

Secondary Ion

Non-uniform oxygen contamination in the superlattice region of a quantum cascade laser measured by secondary ion mass spectrometry.

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Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal–oxide–semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1640659 ◽

2004 ◽

Vol 22 (1) ◽

pp. 327 ◽

Cited By ~ 4

Author(s):

Erika Duda ◽

Shifeng Lu ◽

Chun-Li Liu ◽

Zhixiong Jiang ◽

Joe Lerma ◽

...

Keyword(s):

Mass Spectrometry ◽

Metal Oxide ◽

Field Effect ◽

Secondary Ion Mass Spectrometry ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Silicon ◽

Secondary Ion

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Purification of Cu by hydrogen plasma-arc zone melting and characterization of trace impurities by secondary ion mass spectrometry

Materials Characterization ◽

10.1016/j.matchar.2008.05.004 ◽

2009 ◽

Vol 60 (1) ◽

pp. 60-64 ◽

Cited By ~ 5

Author(s):

G.M. Lalev ◽

J.-W. Lim ◽

N.R. Munirathnam ◽

G.-S. Choi ◽

M. Uchikoshi ◽

...

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Hydrogen Plasma ◽

Zone Melting ◽

Plasma Arc ◽

Trace Impurities ◽

Ion Mass Spectrometry ◽

Secondary Ion

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