Secondary ion mass spectrometry investigation of carbon grain formation in boron nitride epitaxial layers with atomic depth resolution

Van Der Waals ◽

Depth Resolution ◽

Atomic Resolution ◽

Epitaxial Layers ◽

Grain Formation ◽

A refined SIMS procedure allows reaching atomic resolution and characterization of each layer in van der Waals structures separately.

New Deconvolution Technique to Improve the Depth Resolution in Secondary Ion Mass Spectrometry

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.11(2).02021 ◽

2019 ◽

Vol 11 (2) ◽

pp. 02021-1-02021-5

Author(s):

N. Dahraoui ◽

◽

M. Boulakroune ◽

D. Benatia ◽

◽

...

Keyword(s):

Mass Spectrometry ◽

Depth Resolution ◽

Deconvolution Technique ◽

Ion Mass Spectrometry ◽

Detection of Au+ Ions During Fluorine Gas-Assisted Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) for the Complete Elemental Characterization of Microbatteries

ACS Applied Materials & Interfaces ◽

10.1021/acsami.1c10352 ◽

2021 ◽

Vol 13 (34) ◽

pp. 41262-41274

Author(s):

Agnieszka Priebe ◽

Jordi Sastre ◽

Moritz H. Futscher ◽

Jakub Jurczyk ◽

Marcos V. Puydinger dos Santos ◽

...

Keyword(s):

Mass Spectrometry ◽

Time Of Flight ◽

Tof Sims ◽

Ion Mass Spectrometry ◽

Secondary Ion ◽

Elemental Characterization

Forensic Characterization of Lipsticks Using Time-of-Flight Secondary Ion Mass Spectrometry

Journal of Analytical Chemistry ◽

10.1134/s1061934821070091 ◽

2021 ◽

Vol 76 (7) ◽

pp. 854-867

Author(s):

Jihye Lee ◽

Yeonhee Lee

Keyword(s):

Mass Spectrometry ◽

Time Of Flight ◽

Ion Mass Spectrometry ◽

Significant improvement in depth resolution of Cr/Ni interfaces by secondary ion mass spectrometry profiling under normal O2+ion bombardment

Applied Physics Letters ◽

10.1063/1.107397 ◽

1992 ◽

Vol 60 (10) ◽

pp. 1178-1180 ◽

Cited By ~ 23

Author(s):

Kyung Joong Kim ◽

Dae Won Moon

Keyword(s):

Mass Spectrometry ◽

Depth Resolution ◽

Ion Bombardment ◽

Ion Mass Spectrometry ◽

Secondary ion mass spectrometry (SIMS) applications on characterization of RF NPN bipolar polysilicon emitter process

10.1063/1.52570 ◽

1997 ◽

Cited By ~ 2

Author(s):

S. Lu

Keyword(s):

Mass Spectrometry ◽

Ion Mass Spectrometry ◽

Polysilicon Emitter ◽

Characterization of sequentially grafted polysaccharide coatings using time-of-flight secondary ion mass spectrometry (ToF-SIMS) and principal component analysis (PCA)

Surface and Interface Analysis ◽

10.1002/sia.1446 ◽

2002 ◽

Vol 33 (12) ◽

pp. 924-931 ◽

Cited By ~ 13

Author(s):

Sally L. McArthur ◽

Matthew S. Wagner ◽

Patrick G. Hartley ◽

Keith M. McLean ◽

Hans J. Griesser ◽

...

Keyword(s):

Mass Spectrometry ◽

Principal Component Analysis ◽

Time Of Flight ◽

Principal Component ◽

Component Analysis ◽

Tof Sims ◽

Ion Mass Spectrometry ◽

Characterization of S-glass/polysulfone adhesive failure using ion scattering spectroscopy and secondary ion mass spectrometry

Journal of Colloid and Interface Science ◽

10.1016/0021-9797(80)90178-2 ◽

1980 ◽

Vol 74 (1) ◽

pp. 150-162 ◽

Cited By ~ 26

Author(s):

Anthony T Dibenedetto ◽

Daniel A Scola

Keyword(s):

Mass Spectrometry ◽

Adhesive Failure ◽

Ion Scattering ◽

Ion Scattering Spectroscopy ◽

Ion Mass Spectrometry ◽

Characterization of the superlattice region of a quantum cascade laser by secondary ion mass spectrometry

Nanoscale ◽

10.1039/c7nr06401b ◽

2017 ◽

Vol 9 (44) ◽

pp. 17571-17575 ◽

Cited By ~ 8

Author(s):

Paweł Piotr Michałowski ◽

Piotr Gutowski ◽

Dorota Pierścińska ◽

Kamil Pierściński ◽

Maciej Bugajski ◽

...

Keyword(s):

Mass Spectrometry ◽

Quantum Cascade Laser ◽

Quantum Cascade ◽

Oxygen Contamination ◽

Ion Mass Spectrometry ◽

Non-uniform oxygen contamination in the superlattice region of a quantum cascade laser measured by secondary ion mass spectrometry.

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal–oxide–semiconductor field-effect transistors

10.1116/1.1640659 ◽

2004 ◽

Vol 22 (1) ◽

pp. 327 ◽

Cited By ~ 4

Author(s):

Erika Duda ◽

Shifeng Lu ◽

Chun-Li Liu ◽

Zhixiong Jiang ◽

Joe Lerma ◽

...

Keyword(s):

Mass Spectrometry ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Silicon ◽

Purification of Cu by hydrogen plasma-arc zone melting and characterization of trace impurities by secondary ion mass spectrometry

Materials Characterization ◽

10.1016/j.matchar.2008.05.004 ◽

2009 ◽

Vol 60 (1) ◽

pp. 60-64 ◽

Cited By ~ 5

Author(s):

G.M. Lalev ◽

J.-W. Lim ◽

N.R. Munirathnam ◽

G.-S. Choi ◽

M. Uchikoshi ◽

...

Keyword(s):

Mass Spectrometry ◽

Hydrogen Plasma ◽

Zone Melting ◽

Plasma Arc ◽

Trace Impurities ◽

Ion Mass Spectrometry ◽