Post-assembly dimension-dependent face-selective etching of fullerene crystals

2020 ◽  
Vol 7 (3) ◽  
pp. 787-795 ◽  
Author(s):  
Cheng-Tien Hsieh ◽  
Shan-hui Hsu ◽  
Subrata Maji ◽  
Mandeep K. Chahal ◽  
Jingwen Song ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Selective Etching ◽  
Ethylene Diamine ◽  
Assembly Method ◽  
Selective Chemical ◽  
Selective Chemical Etching

Ethylene diamine potentially causes dimension-dependent face-selective chemical etching of fullerene crystals based on a post-assembly method.

Scaling properties of a Si surface patterned by selective chemical etching

2004 ◽  
Vol 36 (1-3) ◽  
pp. 353-358 ◽  
Author(s):  
G. Wisz ◽  
T.Ya. Gorbach ◽  
P.S. Smertenko ◽  
A. Blahut ◽  
K. Zembrowska ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Scaling Properties ◽  
Selective Chemical ◽  
Selective Chemical Etching

Fabrication of InP/SiO2/Si Substrate using Ion-Cutting Process and Selective Chemical Etching

2019 ◽  
Vol 6 (1) ◽  
pp. 99-103
Author(s):  
Peng Chen ◽  
Dapeng Xu ◽  
Luke Mawst ◽  
Kimmo Henttinen ◽  
Tommi Suni ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Cutting Process ◽  
Si Substrate ◽  
Selective Chemical ◽  
Selective Chemical Etching

scholarly journals Understanding the Interdependence of Penetration Depth and Deformation on Nanoindentation of Nanoporous Silver

Metals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 1346
Author(s):  
Yannick Champion ◽  
Mathilde Laurent-Brocq ◽  
Pierre Lhuissier ◽  
Frédéric Charlot ◽  
Alberto Moreira Jorge Junior ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Density Variation ◽  
Selective Chemical ◽  
Indent Depth ◽  
Selective Chemical Etching ◽  
Scanning Electron

A silver-based nanoporous material was produced by dealloying (selective chemical etching) of an Ag38.75Cu38.75Si22.5 crystalline alloy. Composed of connected ligaments, this material was imaged using a scanning electron microscope (SEM) and focused ion-beam (FIB) scanning electron microscope tomography. Its mechanical behavior was evaluated using nanoindentation and found to be heterogeneous, with density variation over a length scale of a few tens of nanometers, similar to the indent size. This technique proved relevant to the investigation of a material’s mechanical strength, as well as to how its behavior related to the material’s microstructure. The hardness is recorded as a function of the indent depth and a phenomenological description based on strain gradient and densification kinetic was proposed to describe the resultant depth dependence.

Fabrication of Au-Ag nanorod SERS substrates by co-sputtering technique and dealloying with selective chemical etching

2020 ◽  
Vol 530 ◽  
pp. 147171
Author(s):  
U. Waiwijit ◽  
C. Chananonnawathorn ◽  
P. Eimchai ◽  
T. Bora ◽  
G.L. Hornyak ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Sers Substrates ◽  
Selective Chemical ◽  
Selective Chemical Etching

Ultrahigh-density, nonlithographic, sub-100 nm pattern transfer by ion implantation and selective chemical etching

2002 ◽  
Vol 81 (25) ◽  
pp. 4826-4828 ◽  
Author(s):  
Naomi Matsuura ◽  
Todd W. Simpson ◽  
Ian V. Mitchell ◽  
Xiang-Yang Mei ◽  
Patrick Morales ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Chemical Etching ◽  
Pattern Transfer ◽  
Selective Chemical ◽  
Ultrahigh Density ◽  
Selective Chemical Etching

Investigating the lateral motion of SiGe islands by selective chemical etching

2006 ◽  
Vol 600 (12) ◽  
pp. 2608-2613 ◽  
Author(s):  
G. Katsaros ◽  
A. Rastelli ◽  
M. Stoffel ◽  
G. Isella ◽  
H. von Känel ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Lateral Motion ◽  
Selective Chemical ◽  
Selective Chemical Etching

Realization of silicon quantum wires by selective chemical etching and thermal oxidation

1996 ◽  
Vol 63 (4) ◽  
pp. 371-375 ◽  
Author(s):  
J. L. Liu ◽  
Y. Shi ◽  
F. Wang ◽  
Y. Lu ◽  
R. Zhang ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Chemical Etching ◽  
Quantum Wires ◽  
Selective Chemical ◽  
Selective Chemical Etching ◽  
Silicon Quantum Wires
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