Electron and hole trapping in Eu- or Eu,Hf-doped LuPO4 and YPO4 tracked by EPR and TSL spectroscopy

2019 ◽  
Vol 7 (37) ◽  
pp. 11473-11482 ◽  
Author(s):  
Valentin Laguta ◽  
Maksym Buryi ◽  
Martin Nikl ◽  
Justyna Zeler ◽  
Eugeniusz Zych ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Single Crystals ◽  
Epr Spectroscopy ◽  
X Rays ◽  
Carrier Trapping ◽  
Hole Trapping ◽  
Charge Carrier Trapping

EPR spectroscopy in X- and Q-bands was employed to trace charge carrier trapping upon exposure to X-rays of LuPO4:Eu, LuPO4:Eu,Hf and YPO4:Eu,Hf flux-grown single crystals, as well as LuPO4:Eu sintered ceramics.

Study of charge carrier trapping by EPR and TSL methods in ZnxMg1-xWO4 single crystals

2019 ◽  
Vol 96 ◽  
pp. 109362 ◽  
Author(s):  
N. Krutyak ◽  
D. Spassky ◽  
V. Nagirnyi ◽  
M. Buryi ◽  
I. Tupitsyna ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Single Crystals ◽  
Carrier Trapping ◽  
Charge Carrier Trapping

Local charge-carrier trapping centers in C60 single crystals

2006 ◽  
Vol 48 (9) ◽  
pp. 1827-1830 ◽  
Author(s):  
Yu. I. Golovin ◽  
D. V. Lopatin ◽  
R. K. Nikolaev ◽  
A. A. Samodurov ◽  
R. A. Stolyarov
Keyword(s):  
Charge Carrier ◽  
Single Crystals ◽  
Carrier Trapping ◽  
Local Charge ◽  
Trapping Centers ◽  
Charge Carrier Trapping

Charge carrier trapping processes in lanthanide doped LaPO4, GdPO4, YPO4, and LuPO4

2018 ◽  
Vol 6 (2) ◽  
pp. 369-379 ◽  
Author(s):  
Tianshuai Lyu ◽  
Pieter Dorenbos
Keyword(s):  
Rare Earth ◽  
Charge Carrier ◽  
Carrier Trapping ◽  
Hole Trapping ◽  
Charge Carrier Trapping

Various methods for deliberate design of electron and hole trapping materials were explored with a study on double lanthanide doped rare earth ortho phosphates.

Intrinsic point defects and charge carrier trapping in monolayer BiOX (X = I, Br, and Cl)

2021 ◽  
Author(s):  
Haixi Pan ◽  
Liping Feng ◽  
Xiaodong Zhang ◽  
Yang Chen ◽  
Gangquan Li ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Point Defects ◽  
Carrier Trapping ◽  
Intrinsic Point Defects ◽  
Charge Carrier Trapping

Manganese as a fast charge carrier trapping center in InP

2006 ◽  
Vol 382 (1-2) ◽  
pp. 220-228 ◽  
Author(s):  
K.P. Korona ◽  
A. Wysmolek ◽  
M. Kamińska ◽  
A. Twardowski ◽  
M. Piersa ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Trapping Center ◽  
Fast Charge ◽  
Carrier Trapping ◽  
Charge Carrier Trapping

scholarly journals Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

2012 ◽  
Vol 171-172 ◽  
pp. 1172-1179 ◽  
Author(s):  
Anne-Marije Andringa ◽  
Nynke Vlietstra ◽  
Edsger C.P. Smits ◽  
Mark-Jan Spijkman ◽  
Henrique L. Gomes ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Carrier Trapping ◽  
Charge Carrier Trapping
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