Theoretical characterization of the electronic properties of heterogeneous vertical stacks of 2D metal dichalcogenides containing one doped layer

2020 ◽  
Vol 22 (25) ◽  
pp. 14088-14098
Author(s):  
Amine Slassi ◽  
David Cornil ◽  
Jérôme Cornil

The rise of van der Waals hetero-structures based on transition metal dichalcogenides (TMDs) opens the door to a new generation of optoelectronic devices.

Nanoscale ◽  
2022 ◽  
Author(s):  
Tao Wang ◽  
Xiaoxing Tan ◽  
Yadong Wei ◽  
Hao Jin

The electronic properties of layered two-dimensional (2D) transition-metal dichalcogenides (TMDs) van der Waals (vdW) heterostructures are strongly dependent on their layer number (N). However, it requires extremely large computational resources...


RSC Advances ◽  
2015 ◽  
Vol 5 (23) ◽  
pp. 17572-17581 ◽  
Author(s):  
Hongsheng Liu ◽  
Nannan Han ◽  
Jijun Zhao

Monolayer transition metal dichalcogenides (TMDs) stand out in two-dimensional (2D) materials due to their potential applications in future microelectronic and optoelectronic devices.


MRS Advances ◽  
2016 ◽  
Vol 1 (47) ◽  
pp. 3229-3234
Author(s):  
Chandan Biswas ◽  
Gustavo A. Lara Saenz ◽  
Dalal Fadil ◽  
Anupama B. Kaul

ABSTRACTTransition metal dichalcogenides (TMDs) are emerging among the potential alternatives to graphene. The monolayer of TMDs can easily be exfoliated mechanically and their electronic properties can also be tuned by controlling the number of layers. TMDs possess an advantage over graphene by controlling band gap magnitude appropriate for the electronic and optoelectronic applications. Here we show, mechanically exfoliated TMDs such as NbSe2 and MoTe2 exhibit metallic and fluctuating conductance behavior respectively. Metallic conduction in NbSe2 was investigated under atmospheric conditions and compered with vacuum conditions. Furthermore, NbSe2 resistance was measured at low temperature up to 5.6 K. The above electronic investigations clearly demonstrate ohmic and fluctuating conduction in NbSe2 and MoTe2 respectively which could be applicable for electronic and optoelectronic devices.


Nano Research ◽  
2016 ◽  
Vol 9 (6) ◽  
pp. 1543-1560 ◽  
Author(s):  
He Tian ◽  
Matthew L. Chin ◽  
Sina Najmaei ◽  
Qiushi Guo ◽  
Fengnian Xia ◽  
...  

Author(s):  
Yan Liu ◽  
Qiang Zhou ◽  
Yalan Yan ◽  
Liang Li ◽  
Jian Zhu ◽  
...  

Pressure has been considered as an effective technique to modulate the structural, electronic, and optical properties of transition metal dichalcogenides (TMDs) materials. Here, by performing in situ high pressure Raman,...


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