scholarly journals Fabrication of black aluminium thin films by magnetron sputtering

RSC Advances ◽  
2020 ◽  
Vol 10 (35) ◽  
pp. 20765-20771
Author(s):  
J. More-Chevalier ◽  
M. Novotný ◽  
P. Hruška ◽  
L. Fekete ◽  
P. Fitl ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Nitrogen Content ◽  
Aluminium Film ◽  
Diffuse Reflectivity

A black aluminium film deposited by magnetron sputtering showed a high correlation of diffuse reflectivity with surface morphology and nitrogen content in plasma.

Effects of Continuous and Discontinuous Deposition Time in Reactive Direct Current Magnetron Sputtering of Titanium Dioxide Thin Films

2015 ◽  
Vol 1131 ◽  
pp. 251-254
Author(s):  
Montri Aiempanakit ◽  
Chantana Salawan ◽  
Kamon Aiempanakit
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Deposition Time ◽  
Spherical Shape ◽  
Contact Angles ◽  
Water Contact ◽  
Direct Current Magnetron Sputtering

The effect of continuous and discontinuous deposition time on the properties of TiO2 thin films deposited by reactive direct current magnetron sputtering (DCMS) on glass substrates was investigated. The deposition processes were designed for a condition of continuous deposition time D1 (60 min) and three conditions of discontinuous deposition time D2 (30 min × 2 times), D3 (15 min × 4 times), and D4 (1 min × 60 times). The crystal structure, surface morphology, and hydrophilicity of TiO2 thin films were characterized by X-ray diffraction, atomic force microscope, and water contact angle method, respectively. It was found that the increasing of discontinuous deposition time (conditions from D1 to D4) shows the changing of grain size from big grain size with spherical shape to small grain size with oval shape. The crystallinity of TiO2 films decrease with increasing the discontinuous deposition time. The water contact angles also decrease as a function of increasing discontinuous deposition time. These results may be explained from the accumulation of heat on the substrate which affected the phase composition and surface morphology of TiO2 thin films.

Characteristics of CZTSSe Thin Films Prepared by Selenization of Sputtered Cu, Sn and ZnS Layers

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940040 ◽  
Author(s):  
N. Akcay ◽  
S. Ozcelik ◽  
E. Zaretskaya ◽  
R. Juskenas
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Sem Study ◽  
Packed Structure

We reported the growth of CZTSSe thin films on Mo-coated SLG substrates by the two-step approach which includes the deposition of precursor films by the magnetron sputtering method at room temperature followed by selenization of the precursor films at 560∘C. Formation of CZTSSe films with the kesterite structure was confirmed by XRD and Raman spectroscopy analyses. The films are slightly Cu-rich and Zn-deficient. SEM study shown that the films have uniform surface morphology and densely packed structure without any voids and cracks.

Crystal structure and surface morphology of magnetron sputtering deposited hexagonal and perovskite-like YbMnO3 thin films

2014 ◽  
Vol 586 ◽  
pp. S343-S347 ◽  
Author(s):  
N.V. Andreev ◽  
T.A. Sviridova ◽  
V.I. Chichkov ◽  
A.P. Volodin ◽  
C. Van Haesendonck ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering

Microstructural and Mechanical Properties of Nanostructured Tungsten Nitride Thin Films Prepared by RF Reactive Magnetron Sputtering

2018 ◽  
Vol 24 (8) ◽  
pp. 5872-5876
Author(s):  
G Balakrishnan ◽  
V Sathiyaraj ◽  
M Dinesh ◽  
P. Naveen Chandran ◽  
C Thamotharan
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Nitrogen Content ◽  
High Hardness ◽  
Reactive Magnetron Sputtering ◽  
Tungsten Nitride ◽  
Reactive Magnetron ◽  
Microstructural Property ◽  
Steel Substrates

In the present work, nanostructured tungsten nitride (WN) thin films were deposited by RF reactive magnetron sputtering technique in a mixture of N2 and Argon atmosphere and its microstructure and mechanical properties were investigated. The Argon pressure was kept constant at 20 sccm, while the N2 partial pressures were varied (3%, 5%, 10% and 15%). The WN thin films are deposited on SS304 stainless steel substrates at a temperature of 500 °C. The microstructural property was analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) and mechanical properties were evaluated by nanoindentation technique. The XRD studies indicated the formation of different phases as a function of nitrogen content. The hardness and the young’s modulus values were in the range 27–39 GPa and 239–280 GPa, respectively. The high hardness values correspond to the coatings with the low nitrogen content and vice-versa. The mechanical properties of the tungsten nitride coatings were strongly influenced by the microstructure.

THE INFLUENCE OF SPUTTERING BIAS-VOLTAGE ON LaB6 FILM'S CHARACTERISTICS

2009 ◽  
Vol 23 (08) ◽  
pp. 1077-1083 ◽  
Author(s):  
JING XU ◽  
GUANGHUI MIN ◽  
XIAOHUA ZHAO ◽  
LIJIE HU ◽  
HUASHUN YU
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Diffraction Peak ◽  
Dc Magnetron Sputtering ◽  
Crystal Face ◽  
Deposited Films ◽  
Stylus Profiler ◽  
Lanthanum Boride

The deposition of lanthanum boride ( LaB 6) thin films by the DC magnetron sputtering were studied. XRD, AFM and Stylus Profiler were used to characterize the properties of the deposited films. The XRD was used to study the crystallinity. The results of the XRD showed that the dominant crystal face is the (100) face. The crystallinity decreased with the increased bias-voltage value, but the influence of bias-voltage on the films is different on different crystal faces. The intensity (100) face was influenced by the bias-voltage more obviously than other faces except the influence of thickness. The diffraction peak maximal intensity of the (100) face changed from 1256 (on 0 V) to 580 (on -150 V), but the intensity of (110) face changed from 614 (on 0 V) to 486 (on -150 V). The rel. int (100%) of the (110) face changed from 38.70 to 74.52. The deposition rate decreased with the increased bias-voltage value, but the decrease was not obvious. The maximum and minimum of the deposition ratio were 17.53 nm and 13.75 nm respectively. Surface morphology of the films was studied by the AFM. The crystallite of the films was less than 50 nm. The maximal roughness of the films decreased first and increased afterward, and the maximum was obtained on the -50 V bias-voltage.

Electrical and Thermal Properties of Platinum Thin Films Prepared by DC Magnetron Sputtering for Micro-Heater of Microsensor Applications after CMP Process

2007 ◽  
Vol 124-126 ◽  
pp. 267-270 ◽  
Author(s):  
Nam Hoon Kim ◽  
Dong Myong Na ◽  
Pil Ju Ko ◽  
Jin Seong Park ◽  
Woo Sun Lee
Keyword(s):  
Thin Films ◽  
Thermal Properties ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Power Consumption ◽  
Chemical Mechanical Polishing ◽  
Thermal Characteristics ◽  
Remarkable Difference ◽  
Dc Magnetron Sputtering ◽  
Sensor Applications

Chemical mechanical polishing (CMP) of platinum thin films was performed for the improvement of surface morphology. Platinum thin films after CMP process with alumina slurry showed the increase of surface morphology without a remarkable difference of the thermal characteristics of as-annealed platinum thin films. The power consumption of platinum thin films micro-heater also became very low by improvement of surface morphology after CMP process. The similar or improved electrical and thermal characteristics of platinum thin films for micro-heater of sensor applications as well as evaluation possibility of sensing property by the improved surface morphology were obtained after CMP process.

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