Deep Surface Passivation for Efficient and Hydrophobic Perovskite Solar Cells

Author(s):  
Yongqing Cai ◽  
Junmin Xia ◽  
Chao Liang ◽  
Shiliang Mei ◽  
Hao Gu ◽  
...  

Defect passivation has developed as an attractive approach to promoting the performance of perovskite solar cells. However, robust control of the interplay between the defects and adsorbates is challenging and...

Author(s):  
The Duong ◽  
Huyen Pham ◽  
Yanting Yin ◽  
Jun Peng ◽  
Md Arafat Mahmud ◽  
...  

Defects on perovskite surfaces acting as charge-carrier-traps are a key factor limiting the performance of perovskite solar cells (PSCs). Here we studied the defect passivation effect of three bromide-containing alkylammonium...


2021 ◽  
pp. 1596-1606
Author(s):  
Qisen Zhou ◽  
Junming Qiu ◽  
Yunfei Wang ◽  
Mei Yu ◽  
Jianhua Liu ◽  
...  

Author(s):  
Jing Ren ◽  
Shurong Wang ◽  
Jianxing Xia ◽  
Chengbo Li ◽  
Lisha Xie ◽  
...  

Defects, inevitably produced in the solution-processed halide perovskite films, can act as charge carrier recombination centers to induce severe energy loss in perovskite solar cells (PSCs). Suppressing these trap states...


2021 ◽  
Author(s):  
Ran Zhao ◽  
Kai Zhang ◽  
Jiahao Zhu ◽  
Shuang Xiao ◽  
Wei Xiong ◽  
...  

Interface passivation is of the pivot to achieve high-efficiency organic metal halide perovskite solar cells (PSCs). Atomic layer deposition (ALD) of wide band gap oxides has recently shown great potential...


2016 ◽  
Vol 8 (5) ◽  
pp. 1-7 ◽  
Author(s):  
Ming Xu ◽  
Jing Feng ◽  
Xia-Li Ou ◽  
Zhen-Yu Zhang ◽  
Yi-Fan Zhang ◽  
...  

Solar Energy ◽  
2021 ◽  
Vol 224 ◽  
pp. 472-479
Author(s):  
Ronghong Zheng ◽  
Shuangshuang Zhao ◽  
Hua Zhang ◽  
Haoyue Li ◽  
Jia Zhuang ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Shun-Chang Liu ◽  
Chen-Min Dai ◽  
Yimeng Min ◽  
Yi Hou ◽  
Andrew H. Proppe ◽  
...  

AbstractIn lead–halide perovskites, antibonding states at the valence band maximum (VBM)—the result of Pb 6s-I 5p coupling—enable defect-tolerant properties; however, questions surrounding stability, and a reliance on lead, remain challenges for perovskite solar cells. Here, we report that binary GeSe has a perovskite-like antibonding VBM arising from Ge 4s-Se 4p coupling; and that it exhibits similarly shallow bulk defects combined with high stability. We find that the deep defect density in bulk GeSe is ~1012 cm−3. We devise therefore a surface passivation strategy, and find that the resulting GeSe solar cells achieve a certified power conversion efficiency of 5.2%, 3.7 times higher than the best previously-reported GeSe photovoltaics. Unencapsulated devices show no efficiency loss after 12 months of storage in ambient conditions; 1100 hours under maximum power point tracking; a total ultraviolet irradiation dosage of 15 kWh m−2; and 60 thermal cycles from −40 to 85 °C.


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