Photoinduced topographical surface changes and photoresponse of the crystals of 7-methoxycoumarin

CrystEngComm ◽  
2021 ◽  
Author(s):  
Kanae Yano ◽  
Ryo Nishimura ◽  
Yohei Hattori ◽  
Masakazu Morimoto ◽  
Haruki Sugiyama ◽  
...  

Photoinduced topographical changes, bending, and photosalient effect due to the dimerization reaction were observed on a single crystal of 7-methoxycoumarin, upon deep UV (254 nm) light irradiation.


Inorganics ◽  
2018 ◽  
Vol 6 (3) ◽  
pp. 97 ◽  
Author(s):  
Marie Gaschard ◽  
Farzaneh Nehzat ◽  
Thomas Cheminel ◽  
Bruno Therrien

The synthesis and characterization of three metalla-rectangles of the general formula [Ru4(η6-p-cymene)4(μ4-clip)2(μ2-Lanthr)2][CF3SO3]4 (Lanthr: 9,10-bis(3,3’-ethynylpyridyl) anthracene; clip = oxa: oxalato; dobq: 2,5-dioxido-1,4-benzoquinonato; donq: 5,8-dioxido-1,4-naphthoquinonato) are presented. The molecular structure of the metalla-rectangle [Ru4(η6-p-cymene)4(μ4-oxa)2(μ2-Lanthr)2]4+ has been confirmed by the single-crystal X-ray structure analysis of [Ru4(η6-p-cymene)4(μ4-oxa)2(μ2-Lanthr)2][CF3SO3]4 · 4 acetone (A2 · 4 acetone), thus showing the anthracene moieties to be available for reaction with oxygen. While the formation of the endoperoxide form of Lanthr was observed in solution upon white light irradiation, the same reaction does not occur when Lanthr is part of the metalla-assemblies.



CrystEngComm ◽  
2019 ◽  
Vol 21 (32) ◽  
pp. 4690-4695 ◽  
Author(s):  
Yang Zhong ◽  
Pai Shan ◽  
Tongqing Sun ◽  
Zhenpeng Hu ◽  
Hongde Liu ◽  
...  

A single crystal of β-CsBa2(PO3)5 has been successfully grown, and it exhibits a remarkable deep-UV cutoff edge of 168 nm.



2009 ◽  
Vol 1203 ◽  
Author(s):  
Mose Bevilacqua ◽  
Richard B. Jackman

AbstractDeep UV detection using a single crystal diamond (SCD) substrate without a homoepitaxial layer has been demonstrated using a defect passivation treatment. Despite evidence of surface damage on the SCD, the treatments lead to highly effective photoconductive devices, displaying six-orders of discrimination between deep UV and visible light and a responsivity as high as 100A/W, equivalent to an external quantum efficiency of 700, similar to the best values for devices based on high quality homoepitaxial layers. Impedance spectroscopic investigations suggest that the treatment used reduces the impact of less resistive surface material, most likely defects left from substrate polishing.



2015 ◽  
Vol 1 (8) ◽  
pp. 1500136 ◽  
Author(s):  
Gang Wu ◽  
Chen Chen ◽  
Shuang Liu ◽  
Congcheng Fan ◽  
Hanying Li ◽  
...  


2002 ◽  
Vol 743 ◽  
Author(s):  
X. Hu ◽  
R. Gaska ◽  
C. Chen ◽  
J. Yang ◽  
E. Kuokstis ◽  
...  

ABSTRACTWe report on high Al-content AlGaN-based deep UV emitter structures grown over single crystal, slightly off c-axis (5.8 degrees) bulk AlN substrates. AlN/AlGaN multiple quantum well (MQW) structures with up to 50% of Al in the well material were grown by using low-pressure MOCVD and characterized by using X-ray, AFM, SEM and photoluminescence techniques. Two light sources, one at 213 nm wavelength for selective excitation of quantum well layers and another one at 193 nm to excite both wells and barriers, were exploited. A weak temperature dependence (from 8 K to 300 K) of the luminescence intensity and the absence of blue-shift of the luminescence peak with increasing excitation intensity pointed to a low density of localized states, in a good agreement with the X-ray data, which indicated very high quality of these MQW structures.The most striking result was observation of stimulated emission at wavelength as short as 258 nm in Al0.5Ga0.5N/AlN MQWs grown on bulk AlN single crystals.





2021 ◽  
Vol 118 (15) ◽  
pp. 154103
Author(s):  
Tingting Zhu ◽  
Kuan Ding ◽  
Yu Oshima ◽  
Anahid Amiri ◽  
Enrico Bruder ◽  
...  




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