scholarly journals Near-IR emission of InGaN Quasi-Quantum Dots on Non-polar GaN Nanowire Structures

2021 ◽  
Author(s):  
Dae-Young Um ◽  
Yong-Ho Ra ◽  
Ji-Hyeon Park ◽  
Ga-Eun Hong ◽  
Cheul-Ro Lee
Keyword(s):  
Quantum Dots ◽  
Induced Polarization ◽  
Large Defect ◽  
Group Iii ◽  
Semiconductor Structures ◽  
Near Ir ◽  
Gan Nanowire ◽  
Group Iii Nitride ◽  
Ir Emission ◽  
Defect Densities

In group III-nitride based semiconductor structures, the incorporation of high indium-composition InGaN has been severely limited by extremely inefficient strain-induced polarization fields and prohibitively large-defect densities. So far, there is...

Lateral growth of AlxGa1–xN and GaN on SiC substrates patterned by photo-electrochemical etching

2002 ◽  
Vol 743 ◽  
Author(s):  
U. Rossów ◽  
N. Riedel ◽  
F. Hitzel ◽  
T. Riedl ◽  
A. Hangleiter
Keyword(s):  
Growth Rates ◽  
Electrochemical Etching ◽  
Layered Structures ◽  
Lateral Growth ◽  
Large Defect ◽  
Defect Reduction ◽  
Group Iii ◽  
Group Iii Nitride ◽  
Nitride Layers ◽  
Defect Densities

AbstractThe large defect densities in heteroepitaxially grown group-III-nitride layers on sapphire or SiC cannot be tolerated in applications such as lasers. We report here on a defect reduction by overgrowth of patterned n-6H-SiC(0001)surfaces.First, we formed mesa structures in the windows of metal masks and then after removal of the masks layers of AlxGa1–xN and GaN were grown by low-pressure MOVPE under conditions of high lateral growth rates. We demonstrate that layers and layered structures can be grown with smooth surfaces and reduced defect densities.

6.4.5 Group III–nitride based quantum dots

2013 ◽  
pp. 126-127
Author(s):  
C. Höfling ◽  
C. Schneider ◽  
A. Forchel
Keyword(s):  
Quantum Dots ◽  
Group Iii ◽  
Group Iii Nitride

Preparation of low-toxic Zn-Ag-In-Te quantum dots with tunable near-IR emission toward optical applications

2018 ◽  
Author(s):  
Tatsuya Kameyama ◽  
Kouta Sugiura ◽  
Yujiro Ishigami ◽  
Takahisa Yamamoto ◽  
Susumu Kuwabata ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Near Ir ◽  
Low Toxic ◽  
Optical Applications ◽  
Ir Emission

Runaway effects in nanoscale group-III nitride semiconductor structures

2001 ◽  
Vol 64 (11) ◽  
Author(s):  
S. M. Komirenko ◽  
K. W. Kim ◽  
V. A. Kochelap ◽  
M. A. Stroscio
Keyword(s):  
Group Iii ◽  
Semiconductor Structures ◽  
Nitride Semiconductor ◽  
Group Iii Nitride

Control of the 3-Fold Symmetric Shape of Group III-Nitride Quantum Dots: Suppression of Fine-Structure Splitting

Nano Letters ◽  
2020 ◽  
Vol 20 (12) ◽  
pp. 8461-8468
Author(s):  
Hwan-Seop Yeo ◽  
Kwanjae Lee ◽  
Jong-Hoi Cho ◽  
Seoung-Hwan Park ◽  
Yong-Hoon Cho
Keyword(s):  
Quantum Dots ◽  
Fine Structure ◽  
Group Iii ◽  
Fine Structure Splitting ◽  
Structure Splitting ◽  
Group Iii Nitride ◽  
Symmetric Shape

scholarly journals Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Hwan-Seop Yeo ◽  
Kwanjae Lee ◽  
Young Chul Sim ◽  
Seoung-Hwan Park ◽  
Yong-Hoon Cho
Keyword(s):  
Quantum Wire ◽  
Quantum Wires ◽  
Geometrical Shape ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Single Quantum ◽  
Group Iii ◽  
Highly Efficient ◽  
Group Iii Nitride ◽  
Size Controlled

Abstract Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.

NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices

2016 ◽  
Vol 6 (2) ◽  
pp. Q3067-Q3070 ◽  
Author(s):  
J. D. Greenlee ◽  
A. Nath ◽  
T. J. Anderson ◽  
B. N. Feigelson ◽  
A. D. Koehler ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Semiconductor Devices ◽  
Capping Layer ◽  
Group Iii ◽  
Nitride Semiconductor ◽  
Group Iii Nitride
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