6.4.5 Group III–nitride based quantum dots

2013 ◽  
pp. 126-127
Author(s):  
C. Höfling ◽  
C. Schneider ◽  
A. Forchel
2021 ◽  
Author(s):  
Dae-Young Um ◽  
Yong-Ho Ra ◽  
Ji-Hyeon Park ◽  
Ga-Eun Hong ◽  
Cheul-Ro Lee

In group III-nitride based semiconductor structures, the incorporation of high indium-composition InGaN has been severely limited by extremely inefficient strain-induced polarization fields and prohibitively large-defect densities. So far, there is...


Nano Letters ◽  
2020 ◽  
Vol 20 (12) ◽  
pp. 8461-8468
Author(s):  
Hwan-Seop Yeo ◽  
Kwanjae Lee ◽  
Jong-Hoi Cho ◽  
Seoung-Hwan Park ◽  
Yong-Hoon Cho

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Hwan-Seop Yeo ◽  
Kwanjae Lee ◽  
Young Chul Sim ◽  
Seoung-Hwan Park ◽  
Yong-Hoon Cho

Abstract Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.


2016 ◽  
Vol 6 (2) ◽  
pp. Q3067-Q3070 ◽  
Author(s):  
J. D. Greenlee ◽  
A. Nath ◽  
T. J. Anderson ◽  
B. N. Feigelson ◽  
A. D. Koehler ◽  
...  

2004 ◽  
Vol 1 (8) ◽  
pp. 2210-2227 ◽  
Author(s):  
M. Hermann ◽  
E. Monroy ◽  
A. Helman ◽  
B. Baur ◽  
M. Albrecht ◽  
...  

1998 ◽  
Vol 189-190 ◽  
pp. 435-438 ◽  
Author(s):  
Hiroshi Harima ◽  
Toshiaki Inoue ◽  
Shin-ichi Nakashima ◽  
Hajime Okumura ◽  
Yuuki Ishida ◽  
...  

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