Runaway effects in nanoscale group-III nitride semiconductor structures

2001 ◽  
Vol 64 (11) ◽  
Author(s):  
S. M. Komirenko ◽  
K. W. Kim ◽  
V. A. Kochelap ◽  
M. A. Stroscio
Keyword(s):  
Group Iii ◽  
Semiconductor Structures ◽  
Nitride Semiconductor ◽  
Group Iii Nitride

NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices

2016 ◽  
Vol 6 (2) ◽  
pp. Q3067-Q3070 ◽  
Author(s):  
J. D. Greenlee ◽  
A. Nath ◽  
T. J. Anderson ◽  
B. N. Feigelson ◽  
A. D. Koehler ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Semiconductor Devices ◽  
Capping Layer ◽  
Group Iii ◽  
Nitride Semiconductor ◽  
Group Iii Nitride

Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds

2001 ◽  
Vol 63 (16) ◽  
Author(s):  
L. E. Ramos ◽  
L. K. Teles ◽  
L. M. R. Scolfaro ◽  
J. L. P. Castineira ◽  
A. L. Rosa ◽  
...  
Keyword(s):  
Effective Mass ◽  
Group Iii ◽  
Zinc Blende ◽  
Mass Properties ◽  
Nitride Semiconductor ◽  
Semiconductor Compounds ◽  
Group Iii Nitride

scholarly journals Near-IR emission of InGaN Quasi-Quantum Dots on Non-polar GaN Nanowire Structures

2021 ◽  
Author(s):  
Dae-Young Um ◽  
Yong-Ho Ra ◽  
Ji-Hyeon Park ◽  
Ga-Eun Hong ◽  
Cheul-Ro Lee
Keyword(s):  
Quantum Dots ◽  
Induced Polarization ◽  
Large Defect ◽  
Group Iii ◽  
Semiconductor Structures ◽  
Near Ir ◽  
Gan Nanowire ◽  
Group Iii Nitride ◽  
Ir Emission ◽  
Defect Densities

In group III-nitride based semiconductor structures, the incorporation of high indium-composition InGaN has been severely limited by extremely inefficient strain-induced polarization fields and prohibitively large-defect densities. So far, there is...

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