scholarly journals Power discontinuity and shift of the energy onset of a molecular de-bromination reaction induced by hot-electron tunneling

Nanoscale ◽  
2021 ◽  
Vol 13 (36) ◽  
pp. 15215-15219
Author(s):  
Ana Barragán ◽  
Roberto Robles ◽  
Nicolás Lorente ◽  
Lucia Vitali
Keyword(s):  
Reaction Onset ◽  
Electron Tunneling ◽  
Hot Electron ◽  
Bromination Reaction ◽  
Molecular Resonance

We describe the electron-induced dissociation of Br atoms in the Au(Br-MBP)2 complex, showing that the reaction onset can be shifted from 2.4 to 4.4 V while the required power drops sharply to 20% when a second molecular resonance is involved.

Plasmonic hot electron tunneling photodetection in vertical Au-graphene hybrid nanostructures

2017 ◽  
Vol 11 (1) ◽  
pp. 1600148 ◽  
Author(s):  
Bowen Du ◽  
Li Lin ◽  
Wei Liu ◽  
Shuai Zu ◽  
Ying Yu ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Hybrid Nanostructures ◽  
Hot Electron

scholarly journals In-situ nanospectroscopic imaging of plasmon-induced two-dimensional [4+4]-cycloaddition polymerization on Au(111)

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Feng Shao ◽  
Wei Wang ◽  
Weimin Yang ◽  
Zhilin Yang ◽  
Yao Zhang ◽  
...  
Keyword(s):  
Dft Calculations ◽  
Density Functional ◽  
Electron Tunneling ◽  
Covalent Bond ◽  
Two Dimensional ◽  
Hot Electron ◽  
Ambient Conditions ◽  
Tunneling Mechanism ◽  
In Situ Investigation

AbstractPlasmon-induced chemical reactions (PICRs) have recently become promising approaches for highly efficient light-chemical energy conversion. However, an in-depth understanding of their mechanisms at the nanoscale still remains challenging. Here, we present an in-situ investigation by tip-enhanced Raman spectroscopy (TERS) imaging of the plasmon-induced [4+4]-cycloaddition polymerization within anthracene-based monomer monolayers physisorbed on Au(111), and complement the experimental results with density functional theory (DFT) calculations. This two-dimensional (2D) polymerization can be flexibly triggered and manipulated by the hot carriers, and be monitored simultaneously by TERS in real time and space. TERS imaging provides direct evidence for covalent bond formation with ca. 3.7 nm spatial resolution under ambient conditions. Combined with DFT calculations, the TERS results demonstrate that the lateral polymerization on Au(111) occurs by a hot electron tunneling mechanism, and crosslinks form via a self-stimulating growth mechanism. We show that TERS is promising to be plasmon-induced nanolithography for organic 2D materials.

Hot Electron Tunneling in Pt/LaAlO3/SrTiO3 Heterostructures for Enhanced Photodetection

2021 ◽  
Vol 13 (39) ◽  
pp. 47208-47217
Author(s):  
Jaeyoung Jeon ◽  
Kitae Eom ◽  
Yunhwa Hong ◽  
Chang-Beom Eom ◽  
Kwang Heo ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Hot Electron

Enhancement of Radiative Plasmon Decay by Hot Electron Tunneling

ACS Nano ◽  
2015 ◽  
Vol 9 (8) ◽  
pp. 8176-8183 ◽  
Author(s):  
Xiao Wang ◽  
Kai Braun ◽  
Dai Zhang ◽  
Heiko Peisert ◽  
Hilmar Adler ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Hot Electron

SIMULATION OF STATIC SURFACE STATES IN AlGaN/GaN HEMT INCLUDING HOT ELECTRON AND QUANTUM EFFECTS

2012 ◽  
Vol 26 (06) ◽  
pp. 1250045 ◽  
Author(s):  
HUI XIA ◽  
XIAO DONG WANG ◽  
ZHONG XING CAO
Keyword(s):  
Electron Tunneling ◽  
Surface States ◽  
Quantum Effects ◽  
Hot Electron ◽  
Surface Charges ◽  
Gan Hemt ◽  
Saturation Velocity ◽  
Vertical Electric Field ◽  
Bulk Gan

Two-dimensional simulations of hot electron and quantum effects in AlGaN / GaN HEMT devices are performed. The effect of surface states is accounted for by defining effective net surface charges in our simulation. Simulation results show that surface states and surface traps which model the electron depletion play an important role in the electrical characteristic of AlGaN / GaN HEMT. Hot electrons play an important role in the charge transport by spilling over into the bulk GaN where they are captured by traps. Excessive net surface charges make the 2DEG much hotter through the role of vertical electric field above the channel. Lattice scattering and electron tunneling are enhanced with the increasing density of net surface charges, and electron mobility and saturation velocity are significantly reduced.

A Memory Device Utilizing Resonant Tunneling in Nanocrystalline Silicon Superlattices

2000 ◽  
Vol 638 ◽  
Author(s):  
Laurent Montès ◽  
Galina F. Grom ◽  
Rishi Krishnan ◽  
Philippe M. Fauchet ◽  
Leonid Tsybeskov ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Room Temperature ◽  
Electron Tunneling ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Memory Device ◽  
Hot Electron ◽  
Non Volatile Memory ◽  
Silicon Nanocrystallites ◽  
Size Dispersion

AbstractA quantum structure based on Si/SiO2 and fabricated using standard Si technology has strong potential for applications in non-volatile and scaled dynamic memories. Among standard requirements, such as long retention time and endurance, a structure utilizing resonant tunneling offers lower bias operation and faster write/read cycle. In addition, degradation effects associated with Fowlher-Nordheim (FN) hot electron tunneling can be avoided. Superlattices of nanometer size layers of silicon and silicon dioxide were obtained by sputtering. The size of the silicon nanocrystallites (nc-Si) is fixed by the thickness of the silicon layer which limits the size dispersion. A detailed analysis of the storage of charges in the dots, as a function of the nanocrystals size, is investigated using capacitance methods. Constant voltage and constant capacitance techniques are used to monitor the discharge of the structure. Room temperature non-volatile memory with retention times as long as months is evidenced.

A TEM study of electron tunneling in biological macromolecules

1987 ◽  
Vol 45 ◽  
pp. 140-141
Author(s):  
J. A. Panitz
Keyword(s):  
Stark Effect ◽  
Electron Tunneling ◽  
Imaging Modality ◽  
Tunneling Current ◽  
Biological Species ◽  
Scanning Tunneling ◽  
Biological Macromolecules ◽  
Flat Surfaces ◽  
Virus Particles ◽  
Stm Images

Tunneling is a ubiquitous phenomenon. Alpha particle disintegration, the Stark effect, superconductivity in thin films, field-emission, and field-ionization are examples of electron tunneling phenomena. In the scanning tunneling microscope (STM) electron tunneling is used as an imaging modality. STM images of flat surfaces show structure at the atomic level. However, STM images of large biological species deposited onto flat surfaces are disappointing. For example, unstained virus particles imaged in the STM do not resemble their TEM counterparts.It is not clear how an STM image of a biological species is formed. Most biological species are large compared to the nominal electrode separation of ∼ 1nm that is required for electron tunneling. To form an image of a biological species, the tunneling electrodes must be separated by a distance that would normally be too large for a tunneling current to be observed.

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