scholarly journals Effect of interfacial defects on the electronic properties of MoS2 based lateral T–H heterophase junctions

RSC Advances ◽  
2021 ◽  
Vol 11 (60) ◽  
pp. 37995-38002
Author(s):  
Mohammad Bahmani ◽  
Mahdi Ghorbani-Asl ◽  
Thomas Frauenheim
Keyword(s):  
Transport Properties ◽  
Electronic Properties ◽  
Systematic Study ◽  
Interfacial Defects

Our systematic study shows significant improvement in transport properties of MoS2-based lateral T–H heterophase junctions when interfacial defects are present.

Defects of monolayer PbI2: a computational study

2021 ◽  
Vol 23 (36) ◽  
pp. 20553-20559
Author(s):  
Han Wang ◽  
Xiao Wang ◽  
Da Li
Keyword(s):  
Dft Calculations ◽  
Electronic Properties ◽  
Systematic Study ◽  
Computational Study ◽  
The Stability ◽  
The Impact

We performed a systematic study on the defects in PbI2 of both 1T and 1H phases by DFT calculations. The stability at the neutral and charged states was calculated. The impact of the defects on the electronic properties was also discussed.

The Unique Carrier Mobility of Monolayer Janus MoSSe Nanoribbons: A First-Principles Study

2021 ◽  
Author(s):  
Wenjin Yin ◽  
Yu Liu ◽  
Bo Wen ◽  
Xi-Bo Li ◽  
Yi-Feng Chai ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Transport Properties ◽  
Electronic Properties ◽  
First Principles ◽  
Carrier Mobility ◽  
Charge Carrier Mobility ◽  
Semiconductor Materials ◽  
Nanoscale Devices ◽  
First Principles Study ◽  
Determining Factor

Charge-carrier mobility is a determining factor for the transport properties of semiconductor materials, and strongly related to the opto-electronics performance of nanoscale devices. Here, we investigate the electronic properties and...

Thermodynamics, kinetics and electronic properties of point defects in β-FeSi2

2019 ◽  
Vol 21 (20) ◽  
pp. 10497-10504 ◽  
Author(s):  
Jun Chai ◽  
Chen Ming ◽  
Xiaolong Du ◽  
Pengfei Qiu ◽  
Yi-Yang Sun ◽  
...  
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Point Defects ◽  
Systematic Study ◽  
Wide Temperature Range ◽  
Semiconductor Material ◽  
Temperature Range ◽  
Earth Abundant

β-FeSi2, a semiconductor material made of two of the most earth-abundant elements, has important applications in thermoelectrics, photovoltaics and optoelectronics owing to its attractive properties such as suitable band gap and air stability over a wide temperature range. In this paper, we present a systematic study on point defects in this material.

In situ degradation studies of two-dimensional WSe2–graphene heterostructures

Nanoscale ◽  
2015 ◽  
Vol 7 (34) ◽  
pp. 14489-14495 ◽  
Author(s):  
B. Wang ◽  
S. M. Eichfield ◽  
D. Wang ◽  
J. A. Robinson ◽  
M. A. Haque
Keyword(s):  
Thermal Expansion ◽  
Thermal Degradation ◽  
Systematic Study ◽  
Two Dimensional ◽  
Thermal Expansion Mismatch ◽  
Two Dimensional Materials ◽  
Interfacial Defects ◽  
In Situ Degradation ◽  
Degradation Studies

Heterostructures of two-dimensional materials can be vulnerable to thermal degradation due to structural and interfacial defects as well as thermal expansion mismatch, yet a systematic study does not exist in the literature.

scholarly journals Antisite disorder and phase segregation in Mn2NiSn

2022 ◽  
Author(s):  
Samiksha Malik ◽  
Elaine T Dias ◽  
Arun Kumar Nigam ◽  
Kaustubh R Priolkar
Keyword(s):  
Crystal Structure ◽  
Transport Properties ◽  
Systematic Study ◽  
Local Structure ◽  
Phase Segregation ◽  
Structural Defects ◽  
Antisite Disorder

Abstract A systematic study of crystal structure, local structure, magnetic and transport properties in quenched and temper annealed Ni2−xMn1+xSn alloys indicate the formation of Mn3Sn type structural defects caused by an antisite disorder between Mn and Sn occupying the Y and Z sublattices of X2YZ Heusler structure. The antisite disorder is caused by the substitution of Ni by Mn at the X sites. On temper annealing, these defects segregate and phase separate into L21 Heusler and D019 Mn3Sn type phases.

Systematic Study of the (ET)2I3 Reticulate Doped Polycarbonate Film: Structure, ESR, Transport Properties and Superconductivity

1997 ◽  
Vol 7 (12) ◽  
pp. 1665-1675 ◽  
Author(s):  
E. Laukhina ◽  
J. Ulanski ◽  
A. Khomenko ◽  
S. Pesotskii ◽  
V. Tkachev ◽  
...  
Keyword(s):  
Transport Properties ◽  
Systematic Study ◽  
Film Structure ◽  
Polycarbonate Film

Theory of Semiconductor Heterojunctions

1982 ◽  
Vol 18 ◽  
Author(s):  
J. Pollmann ◽  
A. Mazur
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Electronic Properties ◽  
Short Review ◽  
Band Edge ◽  
Band Structures ◽  
Semiconductor Heterojunctions ◽  
Lattice Matched

A short review of characteristic electronic properties of heterojunction interfaces is given. Band edge discontinuities and interface band structures for lattice-matched junctions are discussed in detail. The examples presented include non-polar and polar junctions as well as overlayer systems. The results of involved calculations are interpreted in terms of simple physically appealing pictures by directly relating the changes in bonds across an interface to the resulting bands in the interface band structure. The meaning of the results for the transport properties of semiconductor heterojunctions is briefly assessed.

GROWTH AND CHARACTERIZATION OF ATOMIC AND NANOMETER SCALE WIRES ON THE SILICON SURFACE

2000 ◽  
Vol 07 (05n06) ◽  
pp. 555-560 ◽  
Author(s):  
J. NOGAMI
Keyword(s):  
Transport Properties ◽  
Electronic Properties ◽  
Self Assembly ◽  
Silicon Surface ◽  
Growth Behavior ◽  
The Self ◽  
Nanometer Scale ◽  
Semiconductor Surfaces ◽  
Length Scales

Growth of metals on semiconductor surfaces can result in the self-assembly of a variety of 1D or 2D structures whose lateral dimensions range from one atom to tens of atoms. Over this range in length scales, STM gives information about the structure, the growth behavior and the electronic properties of these small structures. STM and STS data on several different systems are presented. In addition, ongoing and future efforts to measure the transport properties of these small structures are described.

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