Exciton Dissociation in Quantum Dots Connected with Photochromic Molecule Bridges

Journal of Materials Chemistry C ◽

10.1039/d1tc04451f ◽

2021 ◽

Author(s):

Lucy U. Yoon ◽

Surya Adhikari ◽

Ephraiem Sarabamoun ◽

Jonathan Bietsch ◽

Esther H. R. Tsai ◽

...

Keyword(s):

Quantum Dots ◽

Potential Barrier ◽

Exciton Dissociation ◽

Dissociation Dynamics ◽

Photochromic Molecules

We report modulation of exciton dissociation dynamics in quantum dots (QD) connected with photochromic molecules. Our results show that switching the configuration of photochromic molecules changes the inter-QD potential barrier...

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Exciton dissociation dynamics and light-driven H2 generation in colloidal 2D cadmium chalcogenide nanoplatelet heterostructures

Nano Research ◽

10.1007/s12274-018-2024-x ◽

2018 ◽

Vol 11 (6) ◽

pp. 3031-3049 ◽

Cited By ~ 18

Author(s):

Qiuyang Li ◽

Tianquan Lian

Keyword(s):

Exciton Dissociation ◽

H2 Generation ◽

Cadmium Chalcogenide ◽

Dissociation Dynamics

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Light management with quantum nanostructured dots-in-host semiconductors

Light Science & Applications ◽

10.1038/s41377-021-00671-x ◽

2021 ◽

Vol 10 (1) ◽

Author(s):

M. Alexandre ◽

H. Águas ◽

E. Fortunato ◽

R. Martins ◽

M. J. Mendes

Keyword(s):

Quantum Dots ◽

Energy Level ◽

Effective Mass ◽

Potential Barrier ◽

Level Structure ◽

Colloidal Quantum Dots ◽

Absorption Coefficients ◽

Energy Level Structure ◽

Bulk Semiconductors ◽

Light Management

AbstractInsightful knowledge on quantum nanostructured materials is paramount to engineer and exploit their vast gamut of applications. Here, a formalism based on the single-band effective mass equation was developed to determine the light absorption of colloidal quantum dots (CQDs) embedded in a wider bandgap semiconductor host, employing only three parameters (dots/host potential barrier, effective mass, and QD size). It was ascertained how to tune such parameters to design the energy level structure and consequent optical response. Our findings show that the CQD size has the biggest effect on the number and energy of the confined levels, while the potential barrier causes a linear shift of their values. While smaller QDs allow wider energetic separation between levels (as desired for most quantum-based technologies), the larger dots with higher number of levels are those that exhibit the strongest absorption. Nevertheless, it was unprecedently shown that such quantum-enabled absorption coefficients can reach the levels (104–105 cm−1) of bulk semiconductors.

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Strong Rashba Spin–Orbit Interaction Intensity in Low-Potential-Barrier Quantum Dots

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cj02 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CJ02 ◽

Cited By ~ 2

Author(s):

Shiu-Ming Huang ◽

Alexander Olegovich Badrutdinov ◽

Kimitoshi Kono ◽

Keiji Ono

Keyword(s):

Quantum Dots ◽

Potential Barrier ◽

Orbit Interaction ◽

Spin Orbit ◽

Spin Orbit Interaction ◽

Rashba Spin ◽

Interaction Intensity

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Optical properties of self-assembled InAs quantum dots grown on InAlAs/InP(001)

MRS Proceedings ◽

10.1557/proc-737-e9.5 ◽

2002 ◽

Vol 737 ◽

Cited By ~ 1

Author(s):

B. Salem ◽

T. Benyattou ◽

G. Guillot ◽

G. Bremond ◽

J. Brault ◽

...

Keyword(s):

Quantum Dots ◽

Excited States ◽

Molecular Beam ◽

Growth Parameters ◽

Exciton Dissociation ◽

Inas Quantum Dots ◽

Self Organized ◽

Component Spectrum ◽

Pl Intensity ◽

Lattice Matched

ABSTRACTSelf-organized InAs quantum islands (QIs) were grown in the Stranski-Krastanov regime, by solid source molecular beam epitaxy (SSMBE), on In0.52Al0.48As layer lattice matched to InP(001) substrate. The growth parameters are chosen to produce dot shaped InAs islands as indicated by the photoluminescence (PL) linear polarization which is about 9%. The PL spectrum reveals several resolvable components. PL versus power excitation and photoluminescence excitation (PLE) measurements show clearly that this multi-component spectrum is related to emission from transitions associated to fundamental and related excited states of quantum dots (QDs) having monolayer-height fluctuations. The integrated PL intensities have been measured as a function of temperature in the 8–300 K range. The PL intensity measured at 300K is only 8 times lower than at 8 K, indicating good carrier confinement in these InAs/InAlAs QDs. An enhancement of the PL intensity in the 8–90 K temperature range has been tentatively attributed to the exciton dissociation from the InAlAs barriers which then recombine radiatively in the InAs QDs.

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