Tin oxide/Silicon Heterojunction with Nano Litchi Shell Structure for Ultrafast, High-Detectivity, Self-Powered Broadband Photodetectors

2022 ◽  
Author(s):  
Cuicui Ling ◽  
Bingxin Feng ◽  
Xiaomeng Wang ◽  
lingtan Zhang ◽  
tuo zhang ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Shell Structure ◽  
Response Speed ◽  
Fast Response ◽  
Research Interest ◽  
Detection Capability ◽  
Absorbing Materials ◽  
Self Powered ◽  
Broadband Detection

Self-powered photodetectors with excellent figure-of-merits, fast response speed, and broadband detection capability have drawn tremendous research interest. However, it is still challenging to develop excellent light-absorbing materials as photodetectors with...

scholarly journals Self-Powered All-Inorganic Perovskite Photodetectors with Fast Response Speed

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Ting Zhang ◽  
Shibin Li
Keyword(s):  
High Performance ◽  
Solution Process ◽  
Response Speed ◽  
Fast Response ◽  
Single Step ◽  
Inorganic Perovskite ◽  
Perovskite Materials ◽  
Photoactive Materials ◽  
Self Powered ◽  
Solvent Processing

AbstractIn this manuscript, the inorganic perovskite CsPbI2Br and CsPbIBr2 are investigated as photoactive materials that offer higher stability than the organometal trihalide perovskite materials. The fabrication methods allow anti-solvent processing the CsPbIxBr3−x films, overcoming the poor film quality that always occur in a single-step solution process. The introduced diethyl ether in spin-coating process is demonstrated to be successful, and the effects of the anti-solvent on film quality are studied. The devices fabricated using the methods achieve high-performance, self-powered and the stabilized photodetectors show fast response speed. The results illustrate a great potential of all-inorganic CsPbIxBr3−x perovskites in visible photodetection and provide an effective way to achieve high performance devices with self-powered capability.

High performance self-powered CuZnS/GaN UV photodetectors with ultrahigh on/off ratio (3 × 108)

2021 ◽  
Vol 9 (14) ◽  
pp. 4799-4807
Author(s):  
Yong Zhang ◽  
Weidong Song
Keyword(s):  
Chemical Bath Deposition ◽  
High Performance ◽  
Response Speed ◽  
Fast Response ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Simple Chemical ◽  
Self Powered

P-CuZnS/n-GaN UV photodetector is prepared by a simple chemical bath deposition, showing excellent self-powered properties, including ultrahigh on/off ratio (3 × 108), fast response speed (0.14/40 ms) and large detectivity of 3 × 1013 Jones.

scholarly journals Self-powered, high response and fast response speed metal–insulator–semiconductor structured photodetector based on 2D MoS2

RSC Advances ◽  
2018 ◽  
Vol 8 (49) ◽  
pp. 28041-28047 ◽  
Author(s):  
Xinxin Liu ◽  
Feng Li ◽  
Minxuan Xu ◽  
Junjie Qi
Keyword(s):  
Response Speed ◽  
Fast Response ◽  
High Response ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Response Recovery ◽  
Self Powered

A MIS structured self-powered photodetector of Pd/HfO2/MoS2 was fabricated by inserting a thin insulator, which has a fast response/recovery speed.

Self-powered photosensing characteristics of amorphous carbon/silicon heterostructures

RSC Advances ◽  
2016 ◽  
Vol 6 (46) ◽  
pp. 40192-40198 ◽  
Author(s):  
L. Z. Hao ◽  
Y. J. Liu ◽  
W. Gao ◽  
Z. D. Han ◽  
Z. J. Xu ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
High Stability ◽  
Response Speed ◽  
Fast Response ◽  
Self Powered ◽  
Silicon Heterostructures ◽  
Zero Voltage

A self-powered photodetector based on a a-C/Si heterojunction is fabricated. Under zero voltage, the device shows excellent photosensing characteristics with a high stability, a high detectivity and responsitivity, as well as a fast response speed.

scholarly journals Self-Powered All-Inorganic Perovskite Photodetectors with Fast Response Speed

2020 ◽  
Author(s):  
Ting Zhang ◽  
Shibin Li
Keyword(s):  
High Performance ◽  
Solution Process ◽  
Response Speed ◽  
Fast Response ◽  
Single Step ◽  
Inorganic Perovskite ◽  
Perovskite Materials ◽  
Photoactive Materials ◽  
Self Powered ◽  
Solvent Processing

Abstract In this manuscript, the inorganic perovskite CsPbI2Br and CsPbIBr2 are investigated as photoactive materials that offers higher stability than the organometal trihalide perovskite materials. The fabrication methods allow anti-solvent processing the CsPbIxBr3−x films, overcoming the poor film quality that always occur in a single-step solution process. The introduced diethyl ether in spin-coating process is demonstrated to be successful, and the effects of the anti-solvent on film quality are studied. The devices fabricated using the methods achieve a high-performance, self-powered and stabilized photodetectors with fast response speed. The results illustrate a great potential of all-inorganic CsPbIxBr3−x perovskites in visible photodetection and provide an effective way to achieve high performance devices with self-powered capability.

Synthesis of vertically-aligned large-area MoS2 nanofilm and its application in MoS2/Si heterostructure photodetector

2021 ◽  
Author(s):  
Yong Lei ◽  
Xiao-Zhan Yang ◽  
Wenlin Feng
Keyword(s):  
Near Infrared ◽  
Transition Metal Dichalcogenides ◽  
Response Speed ◽  
Fast Response ◽  
Large Area ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Vertically Aligned ◽  
Deep Ultraviolet ◽  
Self Powered

Abstract Van der Waals heterostructures based on the combination of 2D transition metal dichalcogenides (TMDCs) and conventional semiconductors offer new opportunities for the next generation of optoelectronics. In this work, the sulfurization of Mo film is used to synthesize vertically-aligned MoS2 nanofilm (V-MoS2) with wafer-size and layer controllability. The V-MoS2/n-Si heterojunction was fabricated by using a 20-nm thickness V-MoS2, and the self-powered broadband photodetectors covering from deep ultraviolet to near infrared is achieved. The device shows superior responsivity (5.06 mA/W), good photodetectivity (5.36×1011 Jones) and high on/off ratio Ion/Ioff (8.31 ×103 at 254 nm). Furthermore, the V-MoS2/n-Si heterojunction device presents a fast response speed with the rise time and fall time being 54.53 ms and 97.83 ms, respectiveely. The high photoelectric performances could be attributed to the high-quality heterojunction between the V-MoS2 and n-Si. These findings suggest that the V-MoS2/n-Si heterojunction has great potential applications in the deep ultraviolet-near infrared detection field, and might be used as a part of the construction of integrated optoelectronic systems.

scholarly journals Self-powered visible photodetector with fast-response speed and high stability based on assembled (In,Ga)N nanowires

OSA Continuum ◽  
2021 ◽  
Author(s):  
Min Jiang ◽  
Jianya Zhang ◽  
Zhiwei Xing ◽  
Dongmin Wu ◽  
Hua Qin ◽  
...  
Keyword(s):  
High Stability ◽  
Response Speed ◽  
Fast Response ◽  
Self Powered

High-Performance Photodetectors with an Ultrahigh Photoswitching Ratio and a Very Fast Response Speed in Self-Powered Cu2ZnSnS4/CdS PN Heterojunctions

2021 ◽  
Vol 3 (9) ◽  
pp. 4135-4143
Author(s):  
Hongzhu Wu ◽  
Chuanhe Ma ◽  
Jiyue Zhang ◽  
Hechun Cao ◽  
Ruobing Lin ◽  
...  
Keyword(s):  
High Performance ◽  
Response Speed ◽  
Fast Response ◽  
Self Powered

Ultrasensitive photodetectors based on a high-quality LiInSe2 single crystal

2018 ◽  
Vol 6 (46) ◽  
pp. 12615-12622 ◽  
Author(s):  
Ning Jia ◽  
Shanpeng Wang ◽  
Pengfei Wang ◽  
Chunlong Li ◽  
TongTong Yu ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Stability ◽  
Response Speed ◽  
Fast Response ◽  
Research Interest ◽  
Future Research ◽  
High Quality ◽  
Current Ratio

An ultrasensitive photodetector based on high-quality LiInSe2 (LISe) was systemically investigated. The device exhibited a high on/off current ratio, high detectivity, fast response speed, and high stability. This work may lay the foundation and ignite future research interest on LISe in photodetection.

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