Synthesis of vertically-aligned large-area MoS2 nanofilm and its application in MoS2/Si heterostructure photodetector

2021 ◽  
Author(s):  
Yong Lei ◽  
Xiao-Zhan Yang ◽  
Wenlin Feng
Keyword(s):  
Near Infrared ◽  
Transition Metal Dichalcogenides ◽  
Response Speed ◽  
Fast Response ◽  
Large Area ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Vertically Aligned ◽  
Deep Ultraviolet ◽  
Self Powered

Abstract Van der Waals heterostructures based on the combination of 2D transition metal dichalcogenides (TMDCs) and conventional semiconductors offer new opportunities for the next generation of optoelectronics. In this work, the sulfurization of Mo film is used to synthesize vertically-aligned MoS2 nanofilm (V-MoS2) with wafer-size and layer controllability. The V-MoS2/n-Si heterojunction was fabricated by using a 20-nm thickness V-MoS2, and the self-powered broadband photodetectors covering from deep ultraviolet to near infrared is achieved. The device shows superior responsivity (5.06 mA/W), good photodetectivity (5.36×1011 Jones) and high on/off ratio Ion/Ioff (8.31 ×103 at 254 nm). Furthermore, the V-MoS2/n-Si heterojunction device presents a fast response speed with the rise time and fall time being 54.53 ms and 97.83 ms, respectiveely. The high photoelectric performances could be attributed to the high-quality heterojunction between the V-MoS2 and n-Si. These findings suggest that the V-MoS2/n-Si heterojunction has great potential applications in the deep ultraviolet-near infrared detection field, and might be used as a part of the construction of integrated optoelectronic systems.

scholarly journals Photoelectric Characteristics of a Large-Area n-MoS2/p-Si Heterojunction Structure Formed through Sulfurization Process

Sensors ◽  
2020 ◽  
Vol 20 (24) ◽  
pp. 7340
Author(s):  
Yoonsok Kim ◽  
Taeyoung Kim ◽  
Eun Kyu Kim
Keyword(s):  
Near Infrared ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Large Area ◽  
Heterojunction Structure ◽  
Sulfurization Process ◽  
Decay Times ◽  
Materials Research ◽  
Metal Dichalcogenides ◽  
P Type

Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2) of the transition metal dichalcogenides family, are widely investigated because of their outstanding electrical and optical properties. However, not much of the 2D materials research completed to date has covered large-area structures comprised of high-quality heterojunction diodes. We fabricated a large-area n-MoS2/p-Si heterojunction structure by sulfurization of MoOx film, which is thermally evaporated on p-type silicon substrate. The n-MoS2/p-Si structure possessed excellent diode characteristics such as ideality factor of 1.53 and rectification ratio in excess of 104. Photoresponsivity and detectivity of the diode showed up to 475 mA/W and 6.5 × 1011 Jones, respectively, in wavelength ranges from visible to near-infrared. The device appeared also the maximum external quantum efficiency of 72%. The rise and decay times of optical transient response were measured about 19.78 ms and 0.99 ms, respectively. These results suggest that the sulfurization process for large-area 2D heterojunction with MoS2 can be applicable to next-generation electronic and optoelectronic devices.

Enhanced Photocurrent Response Speed in Charge-Density-Wave Phase of TiSe2-Metal Junctions

Nanoscale ◽  
2021 ◽  
Author(s):  
Thayer Walmsley ◽  
Yaqiong Xu
Keyword(s):  
Carrier Mobility ◽  
Density Wave ◽  
Transition Metal Dichalcogenides ◽  
Response Speed ◽  
Charge Carrier Mobility ◽  
Metal Dichalcogenides ◽  
Charge Density Wave Phase ◽  
Large Sheet ◽  
High Charge Carrier Mobility ◽  
Significant Attention

Group IVB transition metal dichalcogenides (TMDCs) have attracted significant attention due to their predicted high charge carrier mobility, large sheet current density, and enhanced thermoelectric power. Here, we investigate the...

scholarly journals Self-Powered All-Inorganic Perovskite Photodetectors with Fast Response Speed

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Ting Zhang ◽  
Shibin Li
Keyword(s):  
High Performance ◽  
Solution Process ◽  
Response Speed ◽  
Fast Response ◽  
Single Step ◽  
Inorganic Perovskite ◽  
Perovskite Materials ◽  
Photoactive Materials ◽  
Self Powered ◽  
Solvent Processing

AbstractIn this manuscript, the inorganic perovskite CsPbI2Br and CsPbIBr2 are investigated as photoactive materials that offer higher stability than the organometal trihalide perovskite materials. The fabrication methods allow anti-solvent processing the CsPbIxBr3−x films, overcoming the poor film quality that always occur in a single-step solution process. The introduced diethyl ether in spin-coating process is demonstrated to be successful, and the effects of the anti-solvent on film quality are studied. The devices fabricated using the methods achieve high-performance, self-powered and the stabilized photodetectors show fast response speed. The results illustrate a great potential of all-inorganic CsPbIxBr3−x perovskites in visible photodetection and provide an effective way to achieve high performance devices with self-powered capability.

High performance self-powered CuZnS/GaN UV photodetectors with ultrahigh on/off ratio (3 × 108)

2021 ◽  
Vol 9 (14) ◽  
pp. 4799-4807
Author(s):  
Yong Zhang ◽  
Weidong Song
Keyword(s):  
Chemical Bath Deposition ◽  
High Performance ◽  
Response Speed ◽  
Fast Response ◽  
Uv Photodetector ◽  
Uv Photodetectors ◽  
Simple Chemical ◽  
Self Powered

P-CuZnS/n-GaN UV photodetector is prepared by a simple chemical bath deposition, showing excellent self-powered properties, including ultrahigh on/off ratio (3 × 108), fast response speed (0.14/40 ms) and large detectivity of 3 × 1013 Jones.

scholarly journals The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Caihong Li ◽  
Juntong Zhu ◽  
Wen Du ◽  
Yixuan Huang ◽  
Hao Xu ◽  
...  
Keyword(s):  
Communication Systems ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Large Area ◽  
Optical Signals ◽  
Metal Dichalcogenides ◽  
One Step ◽  
The One ◽  
Charge Carrier Trapping ◽  
Sharp Interfaces

AbstractMonolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 × 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is not conductive to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.

scholarly journals A fast response, self-powered and room temperature near infrared-terahertz photodetector based on a MAPbI3/PEDOT:PSS composite

2020 ◽  
Vol 8 (35) ◽  
pp. 12148-12154 ◽  
Author(s):  
Yifan Li ◽  
Yating Zhang ◽  
Tengteng Li ◽  
Xin Tang ◽  
Mengyao Li ◽  
...  
Keyword(s):  
Response Time ◽  
Room Temperature ◽  
Near Infrared ◽  
Fast Response ◽  
Rapid Response ◽  
Self Powered

A novel self-powered NIR and THz PTE PD based on a (MAPbI3/PEDOT:PSS) composite with a rapid response time of 28 μs.

Strong coupling in two-dimensional materials-based nanostructures: a review

2022 ◽  
Author(s):  
Ye Ming Qing ◽  
Yongze Ren ◽  
Dangyuan Lei ◽  
Hui Feng Ma ◽  
Tie Jun Cui
Keyword(s):  
Strong Coupling ◽  
Coupling Effect ◽  
Transition Metal Dichalcogenides ◽  
Hybrid Nanostructures ◽  
Two Dimensional ◽  
Strong Light ◽  
Two Dimensional Materials ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Emission Behavior

Abstract Strong interaction between electromagnetic radiation and matter leads to the formation of hybrid light-matter states, making the absorption and emission behavior different from those of the uncoupled states. Strong coupling effect results in the famous Rabi splitting and the emergence of new polaritonic eigenmodes, exhibiting spectral anticrossing behavior and unique energy-transfer properties. In recent years, there has been a rapidly increasing number of works focusing on strong coupling between nanostructures and two-dimensional materials (2DMs), because of the exceptional properties and applications they demonstrate. Here, we review the significant recent advances and important developments of strong light-matter interactions in 2DMs-based nanostructures. We adopt the coupled oscillator model to describe the strong coupling and give an overview of various hybrid nanostructures to realize this regime, including graphene-based nanostructures, black phosphorus-based nanostructures, transition-metal dichalcogenides-based nanostructures, etc. In addition, we discuss potential applications that can benefit from these effects and conclude our review with a perspective on the future of this rapidly emerging field.

Tailorable multifunctionalities in ultrathin 2D Bi-based layered supercell structures

Nanoscale ◽  
2021 ◽  
Author(s):  
Zihao He ◽  
Xingyao Gao ◽  
Di Zhang ◽  
Ping Lu ◽  
Xuejing Wang ◽  
...  
Keyword(s):  
Transition Metal ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Ferromagnetic Behavior ◽  
Two Dimensional ◽  
Next Generation ◽  
Layered Oxide ◽  
Nanoelectronic Devices ◽  
Potential Applications ◽  
Metal Dichalcogenides

Two-dimensional (2D) materials with robust ferromagnetic behavior have attracted great interest because of their potential applications in next-generation nanoelectronic devices. Aside from graphene and transition metal dichalcogenides, Bi-based layered oxide...

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