Wideband harmonic‐tuned CMOS power amplifier with 19.5 dBm output power and 22.6% PAE over entire X‐band

2015 ◽  
Vol 51 (9) ◽  
pp. 703-705 ◽  
Author(s):  
Seungwon Park ◽  
Sanggeun Jeon
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
X Band

First demonstration of high-power GaInP/GaAs HBT MMIC power amplifier with 9.9 W output power at X-band

1994 ◽  
Vol 4 (9) ◽  
pp. 293-295 ◽  
Author(s):  
W. Liu ◽  
A. Khatibzadeh ◽  
Tae Kim ◽  
J. Sweder
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
X Band

Potential of Coplanar X-band GaN-MMIC Power Amplifiers

Frequenz ◽  
2014 ◽  
Vol 68 (9-10) ◽  
Author(s):  
Erhan Ersoy ◽  
Serguei Chevtchenko ◽  
Paul Kurpas ◽  
Wolfgang Heinrich
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Power Amplifiers ◽  
Final Stage ◽  
State Of The Art ◽  
The State ◽  
Large Signal ◽  
Two Stage ◽  
X Band ◽  
Gan Hemts

AbstractWhile the vast majority of GaN X-band PAs is realized as microstrip circuits, this paper reports design, fabrication and measurement of a coplanar version. The amplifier is processed using the FBH 4-inch GaN-on-SiC technology with 0.25 µm-gate GaN HEMTs. The two-stage power amplifier circuit delivers more than 12 W cw output power at 10 GHz, with a large-signal gain of 20 dB and a final stage drain efficiency of 45%. Benchmarking shows that these are best-in-class values for a coplanar X-band MMIC, which come very close to the state-of-the-art microstrip counterparts.

scholarly journals AIR-COOLED 350 W X-BAND SOLID-STATE POWER AMPLIFIER

2020 ◽  
Vol 258 (3) ◽  
pp. 43-52
Author(s):  
V. E. Akinin ◽  
O. V. Borisov ◽  
K. A. Ivanov ◽  
Yu. V. Kolkovskiy ◽  
V. M. Minnebaev ◽  
...  
Keyword(s):  
Solid State ◽  
Output Power ◽  
Power Amplifier ◽  
Microwave Power ◽  
State Power ◽  
Control Unit ◽  
Power Supplies ◽  
Amplifier Output ◽  
X Band ◽  
Secondary Power

In this paper we present the results of the design and production of an air-cooled X-band solid-state power amplifier based on AlGaN/GaN/SiC Schottky FET. The power amplifier includes: preliminary power amplifier, output power amplifiers, set of secondary power supplies, digital control unit, monitoring system for the power amplifier performance, set of microwave power waveguide combiners.

X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power

2018 ◽  
Vol 18 (11) ◽  
pp. 7451-7454
Author(s):  
Quan Wang ◽  
Xiaoliang Wang ◽  
Hongling Xiao ◽  
Cuimei Wang ◽  
Lijuan Jiang ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
X Band

scholarly journals X-Band GaN High-Power Amplifier Using Hybrid Power Combining Technique for SAR Applications

2018 ◽  
Vol 7 (5) ◽  
pp. 124-130 ◽  
Author(s):  
Y.-J. Lee ◽  
C.-Y. Chang ◽  
Y.-H. Chou ◽  
I-Y. Tarn ◽  
J. Y.-C. Yaung ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
Maximum Output Power ◽  
Maximum Output ◽  
High Electron ◽  
Power Combining ◽  
Hybrid Power ◽  
High Power Amplifier ◽  
X Band

An X-band high-power amplifier (HPA) based on gallium nitride (GaN) high electron mobility transistors (HEMTs) has been developed for synthetic aperture radar (SAR) applications. A hybrid power combining technique, including microstrip circuits and waveguides, is used to design the HPA. For reducing the size, four 50 W GaN HEMTs cascaded with one 1-to-4 power divider and one 4-to-1 power combiner form a 4-way power combined PCB circuits. For combing the high power and driving an antenna, two PCB circuits are combined by magic-T waveguides. The transmission efficiency of the power combining is approximately 80%. In the 10% duty cycle (pulse width 100 us), the output power of the HPA is over 200 W across the band of 9.5–9.8 GHz. The maximum output power is 230 W at 9.5 GHz, and the power gain is 8.3 dB at 46.1°C.

scholarly journals Thermal deformation model of the submodule of the X-band output power amplifier

2021 ◽  
Vol 13 (1) ◽  
pp. 13-18
Author(s):  
Alexander M. Hodakov ◽  
◽  
Ruslan G. Tarasov ◽  
Vyacheslav A. Sergeev ◽  
Alexander A. Kulikov ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Thermal Deformation ◽  
Maximum Temperature ◽  
Dynamic Mode ◽  
Deformation Model ◽  
Stationary Mode ◽  
Software Environment ◽  
Maximum Value ◽  
X Band

The results of 3D modeling in the Comsol Multiphysics software environment and calculation of temperature and thermal deformation fields of GaAs crystals of monolithic integrated circuits (MIS) of microwave amplifiers as part of the submodule of the X-band output power amplifier (VUM) and their contact connections with the substrate in pulse modes of operation with different duty cycles are presented. It is shown that the maximum temperature and thermomechanical stresses in the MIS crystal in the dynamic mode of operation significantly exceed the calculated values for the stationary mode and strongly depend on the pulse duty cycle of the power dissipated by the MIS. Thermomechanical stresses take the maximum value in some narrow region near the boundary of the adhesive connection of the MIS crystal with the mounting plate; this maximum value strongly depends on the temperature coefficient of expansion (TCR) of the adhesive and takes the lowest value when the TCR of the adhesive is equal to the TCR of the GaAs crystal.

Failure Localization in a Multistage S-Band Power Amplifier

2016 ◽  
Author(s):  
Clarence Rebello ◽  
Ted Kolasa ◽  
Parag Modi
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Fault Tree ◽  
Root Cause ◽  
Failure Investigation ◽  
Band Power ◽  
Cause Of Failure ◽  
Design Materials ◽  
Board Level ◽  
Failure Localization

Abstract During the search for the root cause of a board level failure, all aspects of the product must be revisited and investigated. These aspects encompass design, materials, and workmanship. In this discussion, the failure investigation involved an S-Band Power Amplifier assembly exhibiting abnormally low RF output power where initial troubleshooting did not provide a clear cause of failure. A detailed fault tree drove investigations that narrowed the focus to a few possible root causes. However, as the investigation progressed, multiple contributors were eventually discovered, some that were not initially considered.

РАЗРАБОТКА СВЧ МОНОЛИТНЫХ ИНТЕГРАЛЬНЫХ СХЕМ МИЛЛИМЕТРОВОГО ДИАПАЗОНА НА ОСНОВЕ GAAS ДЛЯ ПРИМЕНЕНИЯ В СОВРЕМЕННЫХ ИНФОРМАЦИОННОКОММУНИКАЦИОННЫХ СИСТЕМАХ НОВОГО ПОКОЛЕНИЯ (5G)

2020 ◽  
Vol 96 (3s) ◽  
pp. 321-324
Author(s):  
Е.В. Ерофеев ◽  
Д.А. Шишкин ◽  
В.В. Курикалов ◽  
А.В. Когай ◽  
И.В. Федин
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Integrated Circuit ◽  
Phase Shifter ◽  
Phase Error ◽  
Microwave Integrated Circuit ◽  
Gain Compression ◽  
Monolithic Microwave Integrated Circuit ◽  
And Performance ◽  
Power Capability

В данной работе представлены результаты разработки СВЧ монолитной интегральной схемы шестиразрядного фазовращателя и усилителя мощности диапазона частот 26-30 ГГц. СКО ошибки по фазе и амплитуде фазовращателя составили 1,2 град. и 0,13 дБ соответственно. Максимальная выходная мощность и КПД по добавленной мощности усилителя в точке сжатия Ку на 1 дБ составили 30 дБм и 20 % соответственно. This paper describes the design, layout, and performance of 6-bit phase shifter and power amplifier monolithic microwave integrated circuit (MMIC), 26-30 GHz band. Phase shifter MMIC has RMS phase error of 1.2 deg. And RMD amplitude error is 0.13 dB. MMIC power amplifier has output power capability of 30 dBm at 1 dB gain compression (P-1dB) and PAE of 20 %.

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