200°C/5 MHz GaN-based gate driver circuits with 1 nF/4.7 Ω RC load for high-temperature high-frequency all-GaN IC applications

2020 ◽  
Vol 56 (22) ◽  
pp. 1200-1202
Author(s):  
Zhe Xu ◽  
Yang Zhou ◽  
Xiong Xin ◽  
Wenjie Wang ◽  
Wuze Xie ◽  
...  
2000 ◽  
Author(s):  
William J. Siskaninetz ◽  
Hank D. Jackson ◽  
James E. Ehret ◽  
Jeffrey C. Wiemeri ◽  
John P. Loehr

2018 ◽  
Vol 924 ◽  
pp. 854-857
Author(s):  
Ming Hung Weng ◽  
Muhammad I. Idris ◽  
S. Wright ◽  
David T. Clark ◽  
R.A.R. Young ◽  
...  

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.


1994 ◽  
Vol T54 ◽  
pp. 283-290 ◽  
Author(s):  
E Janzén ◽  
O Kordina ◽  
A Henry ◽  
W M Chen ◽  
N T Son ◽  
...  

2018 ◽  
Vol 781 ◽  
pp. 36-40
Author(s):  
Olga Dotsenko ◽  
Kirill Frolov ◽  
Dmitry Wagner ◽  
Veronika Dotsenko ◽  
Dmitry Aksentev

In this study, Co0,7Zn1,3W powders were synthesized and investigated at the microwave region. The solid-state reaction method and self-propagating high-temperature synthesis were used to production of the two kinds of hexaferrite powders. The high-frequency magnetic properties under temperature effect have been studied. It is show, that there is a nonlinear dependence on temperature within the 0 – +40 °C temperature range.


Author(s):  
M. A Huque ◽  
R. Vijayaraghavan ◽  
M. Zhang ◽  
B. J. Blalock ◽  
L M. Tolbert ◽  
...  

1968 ◽  
Vol 39 (1) ◽  
pp. 70-74 ◽  
Author(s):  
Robert T. Smith ◽  
Gary D. Achenbach ◽  
Robert Gerson ◽  
W. J. James

2021 ◽  
Author(s):  
Jahangir Afsharian

This thesis is devoted to the development of a novel parallel isolated power supply (PIPS) for the gate driver of integrated Gate Commutated Thyristors (GCT). The proposed PIPS is essentially a special high frequency soft switched DC/DC converter, integrating six parallel isolated power supplies in one module where each power supply generates a regulated dc supply for the GCT gate driver. In commercial GCT power supplies, a high-voltage isolation transformer is indispensable but highly inefficient in terms of cost and size, which can be significantly improved by the optimized transformer. In all, this design strives to achieve a general power supply for powering up the gate drivers of all types of GCT devices in all MV applications with minimal changes in configuration. In this thesis, the configuration of PIPS is presented and its operating principle is elaborated. The transformer optimization procedure satisfying the voltage isolation requirement of GCT gate drivers is extensively discussed. The performance of PIPS, including the front end DC/DC converter, zero voltage switching phase-shift full bridge (ZVS-PS-FB) converter, and the optimization of the transformer, is verified by simulations and experiments where a 360W laboratory prototype is built for the experimental use.


1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.


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