Interface state analysis using integrated room temperature gated photoluminescence

Understanding the evolution of the Sb/Si(111) interface is of great interest in the formation of devices of nanodimensions. We have undertaken in situ (∼10-11 torr) studies of Sb adsorption (at room temperature) and its desorption on the 7 X 7 reconstructed Si(111) surface, by complementary techniques such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), low-energy electron diffraction (LEED), and electron energy loss spectroscopy (EELS). For room-temperature (RT) Sb adsorption, the overlayer grows in the Frank van der Merwe mode, forming an interface state of δ(7 X 7) in the submonolayer Sb coverage regime. Adsorption of 1.0 monolayer (ML) Sb at RT shows an abrupt shift of 0.8 eV in the peak position of the Sb 3d5/2 transition owing to band-bending caused by a metallic (7 X 7) to a semiconducting (1 X 1) surface phase transformation. Changes observed in full width at half-maximum (fwhm) and Sb 3d3/2 and 3d5/2 branching ratio are discussed. Thermal annealing experiments provide evidence for agglomeration of Sb islands, before the multilayer and monolayer desorption. During this desorption process, we have observed two novel surface phases of (5 X 5) at 0.4 ML and (5√3 X 5√3R30°) at 0.2 ML, stable at higher temperatures.

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High Temperature off Current in a-Si TFTS - Effect of Process and Structure

MRS Proceedings ◽

10.1557/proc-219-327 ◽

1991 ◽

Vol 219 ◽

Cited By ~ 9

Author(s):

George E. Possin

Keyword(s):

Room Temperature ◽

Liquid Crystal Displays ◽

Interface State ◽

State Density ◽

Interface State Density ◽

Hole Injection ◽

Electron Conduction ◽

Active Matrix ◽

Silicon Thickness ◽

Matrix Liquid

ABSTRACTThe OFF current in a-Si TFTs is an important parameter, especially for applications such as active matrix liquid crystal displays. In some demanding applications operation at 70°C or higher is required. This paper reports studies of the OFF current limiting mechanisms at room temperature and above. It is shown that the limiting mechanisms are hole injection from the drain junction at room temperature and electron conduction at higher temperatures. The importance of silicon thickness and interface state density at the passivation interface is stressed.

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A simple technique for hot-carrier-induced interface state analysis in thin oxide MOS capacitors

Solid-State Electronics ◽

10.1016/s0038-1101(98)00321-9 ◽

1999 ◽

Vol 43 (3) ◽

pp. 641-644 ◽

Cited By ~ 1

Author(s):

A. Koukab ◽

A. Hoffmann ◽

A. Bath ◽

J.-P. Charles

Keyword(s):

Simple Technique ◽

Interface State ◽

Mos Capacitors ◽

Hot Carrier ◽

Thin Oxide ◽

State Analysis

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An improved high frequency C-V method for interface state analysis on MIS structures

Solid-State Electronics ◽

10.1016/s0038-1101(96)00112-8 ◽

1997 ◽

Vol 41 (4) ◽

pp. 635-641 ◽

Cited By ~ 25

Author(s):

A Koukab ◽

A Bath ◽

E Losson

Keyword(s):

High Frequency ◽

Interface State ◽

Mis Structures ◽

State Analysis

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Microcomputer-aided interface-state analysis

IEE Proceedings I Solid State and Electron Devices ◽

10.1049/ip-i-1.1980.0025 ◽

1980 ◽

Vol 127 (3) ◽

pp. 133 ◽

Cited By ~ 1

Author(s):

P.J. Martin ◽

G.G. Roberts

Keyword(s):

Interface State ◽

State Analysis

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Impedance and Interface Properties of Al/Methyl-Red/p-InP Solar Cell

International Journal of Photoenergy ◽

10.1155/2009/374301 ◽

2009 ◽

Vol 2009 ◽

pp. 1-7 ◽

Cited By ~ 5

Author(s):

Ömer Güllü

Keyword(s):

Solar Cell ◽

Barrier Height ◽

Room Temperature ◽

Short Circuit ◽

Relaxation Times ◽

Interface State ◽

Interface States ◽

State Density ◽

Open Circuit ◽

Methyl Red

An Al/methyl-red/p-InP solar cell was fabricated via solution-processing method and was characterized by using current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) measurements at room temperature. From darkI-Vcharacteristics, the values of ideality factor and barrier height of the device were calculated as 1.11 eV and 2.02, respectively. It has been seen that the device exhibited a good photovoltaic behavior with a maximum open circuit voltageVocof 0.38 V and short-circuit currentIscof 2.8 nA under only 200 lx light intensity. The barrier height and acceptor carrier concentration values for the Al/methyl-red/p-InP devices were extracted as 1.27 eV and3.46×1017 cm-3from linear region of itsC-2-Vcharacteristics, respectively. The difference betweenΦb(I-V) andΦb(C-V) for Al/methyl-red/p-InP device was attributed the different nature of theI-VandC-Vmeasurements. Also, the energy distribution curves of the interface states and their time constants were obtained from the experimental conductance properties of the Al/methyl-red/p-InP structure at room temperature. The interface state densities and their relaxation times of the device have ranged from2.96×1012 cm-2eV-1and4.96×10-6s at (1.11-Ev) eV to5.19×1012 cm-2 eV-1and9.39×10-6s at (0.79-Ev) eV, respectively. It was seen that both the interface state density and the relaxation time of the interface states have decreased with bias voltage from experimental results.

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Electrical Transport Mechanisms in p+a-SiC:H/n c-Si Heterojunctions: dark J-V-T Characteristics

MRS Proceedings ◽

10.1557/proc-420-239 ◽

1996 ◽

Vol 420 ◽

Cited By ~ 8

Author(s):

M. W. M van Cleef ◽

M. W. H. Philippens ◽

F. A. Rubinelli ◽

M. Kolter ◽

R. E. I. Schropp

Keyword(s):

Bias Voltage ◽

Electrical Transport ◽

Room Temperature ◽

Crystalline Silicon ◽

Forward Bias ◽

Equivalent Circuit Model ◽

Interface State ◽

Transport Mechanisms ◽

Forward Bias Voltage ◽

State Densities

AbstractIn the present paper we show results of dark current-voltage measurements performed on p+ a- SiC:H/n c-Si heterojunction diodes at various temperatures (100–400K). We investigated the voltage derivative of these J-V curves in order to the distinguish possible current transport mechanisms. It was found that for low temperatures (<300K), the current is determined by recombination of carriers in the crystalline silicon, whereas at high temperature (>300 K), by a tunnelling mechanism. At room temperature, both mechanisms contribute to the current. By using an equivalent circuit model and detailed numerical simulations we have interpreted our experimental characteristics. The simulations done at room temperature, show that at low forward bias voltage the current is controlled by recombination in the crystalline silicon and that at high forward bias voltage by a combination of multi-step tunnelling and a-SiC:H series resistance. For interface state densities equal to or higher than 1012 cm−2, the recombination was found to be dominated by the states at the amorphous-crystalline silicon interface.

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D-Shaped Concrete-Filled Steel Tube Structure in Bridge Engineering

Advances in Civil Engineering ◽

10.1155/2021/6611003 ◽

2021 ◽

Vol 2021 ◽

pp. 1-12

Author(s):

Yuan Liu ◽

Wei Wang ◽

Changqing Wang ◽

Shuosong Bi ◽

Jianming Zhu

Keyword(s):

Mechanical Properties ◽

Room Temperature ◽

Interface State ◽

Steel Tube ◽

Bridge Engineering ◽

Displacement Curve ◽

Concrete Filled Steel Tube ◽

The Impact ◽

Tube Structure ◽

Concrete Interface

With the continuous progress of the construction industry, the requirements for concrete in the bridge engineering are getting higher and higher. This research mainly discusses the detection of D-shaped concrete-filled steel tube structure in bridge engineering. In this study, the D-shaped concrete-filled steel tube member was used as the research object, and the load-displacement curve of the D-shaped concrete-filled steel tube compression-bending member was analyzed by the fiber model program. In the determination of the bonding state of the concrete-filled steel tube interface, in order to avoid the impact of mechanical and manual vibrating and the difference in concrete pouring methods on the test, the study uses C60 self-compacting microexpansion concrete. While pouring the specimens, three sets of cube specimens with a side length of 100 mm are reserved to determine the mechanical properties of the concrete simultaneously. In the temperature shock measurement of the concrete-filled steel tube specimen, the concrete-filled steel tube specimen was placed in a resistance heater during the simulated heating stage and heated to 20°C, 40°C, 60°C, and 80°C at room temperature. When measuring the mechanical properties of the specimen under the axial load, the specimen is heated from room temperature to the temperature of the entire section to reach 20°C, 40°C, 60°C, and 80°C. After preloading, the load of each level is 10t for continuous operation. Load and record the strain of the steel pipe and concrete under each load. If only the radial effect of the steel tube on concrete is considered, the temperature of 11°C, 20°C, and 80°C is the best ambient temperature. The results show that the D-shaped steel tube concrete interface state can provide a certain theoretical and experimental reference for the optimization of the steel tube concrete interface, ensuring the long-term working performance of the steel tube concrete under the harsh environment.

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