Low noise figure (7.2 dB) and high gain (29 dB) semiconductor optical amplifier with a single layer AR coating

1997 ◽  
Vol 33 (6) ◽  
pp. 536 ◽  
Author(s):  
A.E. Kelly ◽  
I.F. Lealman ◽  
L.J. Rivers ◽  
S.D. Perrin ◽  
M. Silver
2013 ◽  
Vol 33 (5) ◽  
pp. 0506003
Author(s):  
张珂卫 Zhang Kewei ◽  
赵卫 Zhao Wei ◽  
谢小平 Xie Xiaoping ◽  
汪伟 Wang Wei ◽  
钱凤臣 Qian Fengchen ◽  
...  

Electronics ◽  
2021 ◽  
Vol 10 (18) ◽  
pp. 2275
Author(s):  
Adriana Lipovac ◽  
Vlatko Lipovac ◽  
Mirza Hamza ◽  
Vedran Batoš

Optical time-domain reflectometer (OTDR) is used to characterize fiber optic links by identifying and localizing various refractive and reflective events such as breaks, splices, and connectors, and measuring insertion/return loss and fiber length. Essentially, OTDR inserts a pulsed signal into the fiber, from which a small portion that is commonly referred to as Rayleigh backscatter, is continuously reflected back with appropriate delays of the reflections expressed as the power loss versus distance, by conveniently scaling the time axis. Specifically, for long-distance events visibility and measurement accuracy, the crucial OTDR attribute is dynamic range, which determines how far downstream the fiber can the strongest transmitted optical pulse reach. As many older-generation but still operable OTDR units have insufficient dynamic range to test the far-end of longer fibers, we propose a simple and cost-effective solution to reactivate such an OTDR by inserting a low-noise high-gain optical preamplifier in front of it to lower the noise figure and thereby the noise floor. Accordingly, we developed an appropriate dynamic range and distance span extension model which provided the exemplar prediction values of 30 dB and 75 km, respectively, for the fiber under test at 1550 nm. These values were found to closely match the dynamic range and distance span extensions obtained for the same values of the relevant parameters of interest by the preliminary practical OTDR measurements conducted with the front-end EDFA optical amplifier, relative to the measurements with the OTDR alone. This preliminary verifies that the proposed concept enables a significantly longer distance span than the OTDR alone. We believe that the preliminary results reported here could serve as a hint and a framework for a more comprehensive test strategy in terms of both test diversification and repeating rate, which can be implemented in a network operator environment or professional lab.


2010 ◽  
Vol 7 (23) ◽  
pp. 1686-1693 ◽  
Author(s):  
Ehsan Kargaran ◽  
Hojat Khosrowjerdi ◽  
Karim Ghaffarzadegan ◽  
Hooman Nabovati
Keyword(s):  

2013 ◽  
Vol 6 (2) ◽  
pp. 109-113 ◽  
Author(s):  
Andrea Malignaggi ◽  
Amin Hamidian ◽  
Georg Boeck

The present paper presents a fully differential 60 GHz four stages low-noise amplifier for wireless applications. The amplifier has been optimized for low-noise, high-gain, and low-power consumption, and implemented in a 90 nm low-power CMOS technology. Matching and common-mode rejection networks have been realized using shielded coplanar transmission lines. The amplifier achieves a peak small-signal gain of 21.3 dB and an average noise figure of 5.4 dB along with power consumption of 30 mW and occupying only 0.38 mm2pads included. The detailed design procedure and the achieved measurement results are presented in this work.


Author(s):  
Anjana Jyothi Banu ◽  
G. Kavya ◽  
D. Jahnavi

A 26[Formula: see text]GHz low-noise amplifier (LNA) designed for 5G applications using 0.18[Formula: see text][Formula: see text]m CMOS technology is proposed in this paper. The circuit includes a common-source in the first stage to suppress the noise in the amplifier. The successive stage has a Cascode topology along with an inductive feedback to improve the power gain. The input matching network is designed to achieve the input reflection coefficient less than [Formula: see text]7dB at the intended frequency. The matching network at the output is designed using inductor–capacitor (LC) components connected in parallel to attain the output reflection coefficient of [Formula: see text]10[Formula: see text]dB. Due to the inductor added in feedback at the second stage. The [Formula: see text] obtained is 18.208[Formula: see text]dB at 26[Formula: see text]GHz with a noise figure (NF) of 2.8[Formula: see text]dB. The power supply given to the LNA is 1.8[Formula: see text]V. The simulation and layout of the presented circuit are performed using Cadence Virtuoso software.


Author(s):  
Asieh Parhizkar Tarighat ◽  
Mostafa Yargholi

A two-path low-noise amplifier (LNA) is designed with TSMC 0.18[Formula: see text][Formula: see text]m standard RF CMOS process for 6–16[Formula: see text]GHz frequency band applications. The principle of a conventional resistive shunt feedback LNA is analyzed to demonstrate the trade-off between the noise figure (NF) and the input matching. To alleviate the mentioned issue for wideband application, this structure with noise canceling technique and linearity improvement are applied to a two-path structure. Flat and high gain is supplied by the primary path; while the input and output impedance matching are provided by the secondary path. The [Formula: see text][Formula: see text]dB bandwidth can be increased to a higher frequency by inductive peaking, which is used at the first stage of the two paths. Besides, by biasing the transistors at the threshold voltage, low power dissipation is achieved. The [Formula: see text][Formula: see text]dB gain bandwidth of the proposed LNA is 10[Formula: see text]GHz, while the maximum power gain of 13.1[Formula: see text]dB is attained. With this structure, minimum NF of 4.6[Formula: see text]dB and noise flatness of 1[Formula: see text]dB in the whole bandwidth can be achieved. The input impedance is matched, and S[Formula: see text] is lower than [Formula: see text]10 dB. With the proposed linearized LNA, the average IIP[Formula: see text][Formula: see text]dBm is gained, while it occupies 1051.7[Formula: see text][Formula: see text]m die area.


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