Fabrication and characterisation of transparent-gate field effect transistors using indium tin oxide

IEE Proceedings - Optoelectronics ◽

10.1049/ip-opt:19960083 ◽

1996 ◽

Vol 143 (1) ◽

pp. 7-11 ◽

Author(s):

A.H. Khalid ◽

A.A. Rezazadeh

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Field Effect ◽

Field Effect Transistors

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P-33: Impact of TiO2 Incorporation in the Structural and Electrical Property of the Sputtered Indium Tin Oxide Field Effect Transistors

SID Symposium Digest of Technical Papers ◽

10.1889/1.3621048 ◽

2011 ◽

Vol 42 (1) ◽

pp. 1212-1214 ◽

Author(s):

Ji-In Kim ◽

Kwang Hwan Ji ◽

Jae Kyeong Jeong ◽

Hoichang Yang

Keyword(s):

Electrical Property ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Field Effect ◽

Field Effect Transistors

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Transparent indium tin oxide as inkjet-printed thin film electrodes for organic field-effect transistors

physica status solidi (a) ◽

10.1002/pssa.201127362 ◽

2011 ◽

Vol 208 (12) ◽

pp. 2920-2925 ◽

Author(s):

Rudolf C. Hoffmann ◽

Stefan Dilfer ◽

Jörg J. Schneider

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Thin Film Electrodes

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Top-gate-type ambipolar organic field-effect transistors with indium–tin oxide drain/source electrodes using polyfluorene derivatives

Organic Electronics ◽

10.1016/j.orgel.2009.12.004 ◽

2010 ◽

Vol 11 (4) ◽

pp. 509-513 ◽

Author(s):

Hirotake Kajii ◽

Kyohei Koiwai ◽

Youhei Hirose ◽

Yutaka Ohmori

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Polyfluorene Derivatives

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Low-Temperature Solution-Processed Amorphous Indium Tin Oxide Field-Effect Transistors

Journal of the American Chemical Society ◽

10.1021/ja903886r ◽

2009 ◽

Vol 131 (31) ◽

pp. 10826-10827 ◽

Author(s):

Hyun Sung Kim ◽

Myung-Gil Kim ◽

Young-Geun Ha ◽

Mercouri G. Kanatzidis ◽

Tobin J. Marks ◽

...

Keyword(s):

Low Temperature ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Solution Processed ◽

Temperature Solution

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Ti-Doped Indium Tin Oxide Thin Films for Transparent Field-Effect Transistors: Control of Charge-Carrier Density and Crystalline Structure

ACS Applied Materials & Interfaces ◽

10.1021/am200388h ◽

2011 ◽

Vol 3 (7) ◽

pp. 2522-2528 ◽

Author(s):

Ji-In Kim ◽

Kwang Hwan Ji ◽

Mi Jang ◽

Hoichang Yang ◽

Rino Choi ◽

...

Keyword(s):

Charge Carrier ◽

Crystalline Structure ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Carrier Density ◽

Field Effect ◽

Field Effect Transistors ◽

Charge Carrier Density ◽

Oxide Thin Films

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Electrochemically-Gated Field-Effect Transistor with Indium Tin Oxide Nanoparticles as Active Layer

Acta Physica Polonica A ◽

10.12693/aphyspola.115.473 ◽

2009 ◽

Vol 115 (2) ◽

pp. 473-476 ◽

Author(s):

S. Dasgupta ◽

S. Dehm ◽

R. Kruk ◽

H. Hahn

Keyword(s):

Active Layer ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Nanoparticles ◽

Effect Transistor ◽

Tin Oxide Nanoparticles ◽

Indium Tin Oxide Nanoparticles

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High-performance flexible zinc tin oxide field-effect transistors

Applied Physics Letters ◽

10.1063/1.2120895 ◽

2005 ◽

Vol 87 (19) ◽

pp. 193503 ◽

Author(s):

W. B. Jackson ◽

R. L. Hoffman ◽

G. S. Herman

Keyword(s):

Tin Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

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Optical field effect transistor with an indium tin oxide gate electrode

10.1117/12.250937 ◽

1996 ◽

Author(s):

J. B. Fodje ◽

D. Mukherjee ◽

Cyril A. Hogarth

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Optical Field ◽

Gate Electrode ◽

Effect Transistor

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pH and Procaine Sensing Characteristics of Extended-Gate Field-Effect Transistor Based on Indium Tin Oxide Glass

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.4838 ◽

2005 ◽

Vol 44 (7A) ◽

pp. 4838-4842 ◽

Author(s):

Jung-Chuan Chou ◽

Jung-Lung Chiang ◽

Chin-Lung Wu

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Glass ◽

Effect Transistor ◽

Indium Tin Oxide Glass ◽

Sensing Characteristics

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Solution-Gated Ultrathin Channel Indium Tin Oxide-Based Field-Effect Transistor Fabricated by a One-Step Procedure that Enables High-Performance Ion Sensing and Biosensing

ACS Applied Materials & Interfaces ◽

10.1021/acsami.1c05830 ◽

2021 ◽

Author(s):

Toshiya Sakata ◽

Shoichi Nishitani ◽

Akiko Saito ◽

Yuta Fukasawa

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Ion Sensing ◽

Step Procedure ◽

One Step ◽

Effect Transistor

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