P-33: Impact of TiO2 Incorporation in the Structural and Electrical Property of the Sputtered Indium Tin Oxide Field Effect Transistors

2011 ◽  
Vol 42 (1) ◽  
pp. 1212-1214 ◽  
Author(s):  
Ji-In Kim ◽  
Kwang Hwan Ji ◽  
Jae Kyeong Jeong ◽  
Hoichang Yang
Keyword(s):  
Electrical Property ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Field Effect ◽  
Field Effect Transistors

Low-Temperature Solution-Processed Amorphous Indium Tin Oxide Field-Effect Transistors

2009 ◽  
Vol 131 (31) ◽  
pp. 10826-10827 ◽  
Author(s):  
Hyun Sung Kim ◽  
Myung-Gil Kim ◽  
Young-Geun Ha ◽  
Mercouri G. Kanatzidis ◽  
Tobin J. Marks ◽  
...  
Keyword(s):  
Low Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Solution Processed ◽  
Temperature Solution

High-performance flexible zinc tin oxide field-effect transistors

2005 ◽  
Vol 87 (19) ◽  
pp. 193503 ◽  
Author(s):  
W. B. Jackson ◽  
R. L. Hoffman ◽  
G. S. Herman
Keyword(s):  
Tin Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Zinc Tin Oxide
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