Low Threshold Current Operation of Stacked InAs/GaAs Quantum Dot Lasers with GaP Strain-Compensation Layers

2006 ◽  
Author(s):  
J. Tatebayashi ◽  
N. Nuntawong ◽  
Y.C. Xin ◽  
P.S. Wong ◽  
S. Huang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Threshold Current ◽  
Quantum Dot Lasers ◽  
Strain Compensation ◽  
Low Threshold ◽  
Current Operation ◽  
Gaas Quantum Dot

Low threshold current operation of self-assembled InAs∕GaAs quantum dot lasers by metal organic chemicalvapour deposition

2003 ◽  
Vol 39 (15) ◽  
pp. 1130 ◽  
Author(s):  
J. Tatebayashi ◽  
N. Hatori ◽  
H. Kakuma ◽  
H. Ebe ◽  
H. Sudo ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Threshold Current ◽  
Quantum Dot Lasers ◽  
Metal Organic ◽  
Low Threshold ◽  
Current Operation ◽  
Self Assembled ◽  
Gaas Quantum Dot

Effects of Spacer Thickness on the Performance of InGaAs/GaAs Quantum Dot Lasers

2000 ◽  
Vol 642 ◽  
Author(s):  
Nien-Tze Yeh ◽  
Wei-Shen Liu ◽  
Shu-Han Chen ◽  
Jen-Inn Chyi
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Inhomogeneous Broadening ◽  
Quantum Dot Lasers ◽  
Low Threshold ◽  
Spacer Thickness ◽  
Gaas Quantum Dot

ABSTRACTIt is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.

scholarly journals 1.32 μm InAs/InGaAs/GaAs quantum dot lasers operating at room temperature with low threshold current density

2006 ◽  
Author(s):  
Abdelmajid Salhi ◽  
Vittorianna Tasco ◽  
Luigi Martiradonna ◽  
Giuseppe Visimberga ◽  
Laura Fortunato ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Dot Lasers ◽  
Low Threshold ◽  
Gaas Quantum Dot

InAs/GaAs quantum dot lasers with GaP strain-compensation layers grown by molecular beam epitaxy

2016 ◽  
Vol 213 (4) ◽  
pp. 958-964 ◽  
Author(s):  
Takeo Kageyama ◽  
Katsuyuki Watanabe ◽  
Quoc Huy Vo ◽  
Keizo Takemasa ◽  
Mitsuru Sugawara ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Quantum Dot Lasers ◽  
Strain Compensation ◽  
Gaas Quantum Dot
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